IP Library Granted Patent US 12706284
Granted Patent B2
US 12706284 · App. 17/417,912 · Granted Aug 11, 2026

Adhesion removal method and film-forming method

Inventors: Yosuke Tanimoto (Tokyo, JP); Shimon Osada (Tokyo, JP)
Assignee: Resonac Corporation
H01J37/32853B08B5/00B08B7/00C23C8/08C23C16/4405
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Quick Facts
Patent No.
US 12706284
App. No.
17/417,912
Granted
Aug 11, 2026
Kind
B2
Abstract

Provided are an adhesion removal method capable of removing sulfur-containing adhesions that adhere onto the inner surface of a chamber or the inner surface of a pipe connected to the chamber without disassembly of the chamber and a film-forming method. Sulfur-containing adhesions adhering onto at least one of the inner surface of a chamber ( 10 ) and the inner surface of a discharge pipe ( 15 ) connected to the chamber ( 10 ) are removed by reaction with a cleaning gas containing a fluorine-containing compound gas.

Claims (11)

1 . An adhesion removal method comprising:

reacting a sulfur-containing adhesion with a cleaning gas to form a sulfur fluoride gas, the sulfur-containing adhesion adhering onto at least one of an inner surface of a chamber and an inner surface of a pipe connected to the chamber, thereby removing the sulfur-containing adhesion,

wherein the cleaning gas consists of fluorine gas and an inert gas, and

wherein the cleaning gas is brought into contact with the adhesion in a condition of a temperature of 350° C. to 800° C. and a pressure of 20 Pa to 101 kPa.

2 . A film-forming method comprising:

a passivation step of supplying a passivation gas containing a sulfur-containing compound gas to a chamber in which a substrate is stored and reacting the substrate with the passivation gas to form a passivation film on a surface of the substrate; and

an adhesion removal step of removing a sulfur-containing adhesion adhering onto at least one of an inner surface of the chamber and an inner surface of a pipe connected to the chamber after the passivation step, wherein

the adhesion removal step is performed by the adhesion removal method according to claim 1 .

3 . The adhesion removal method according to claim 1 , wherein the inert gas is nitrogen gas.

4 . The film-forming method according to claim 2 , wherein the sulfur-containing compound gas is hydrogen sulfide gas.

5 . The film-forming method according to claim 2 , wherein the inert gas is nitrogen gas.