High-frequency line connection structure

1 . A structure comprising:

a substrate comprising a multilayer structure including a first plurality of layers, the first plurality of layers being stacked perpendicular to a surface of the substrate, each of the first plurality of layers being made of an insulator or a semi-insulating semiconductor;

a first high-frequency line disposed in the substrate, the first high-frequency line being disposed in a first layer of the first plurality of layers;

a second high-frequency line disposed in the substrate, the second high-frequency line having an extension direction different from an extension direction of the first high-frequency line, the second high-frequency line extending through the first plurality of layers; and

a connecting part connecting the first high-frequency line to the second high-frequency line and comprising a bend in an extension direction of the connecting part,

wherein the substrate defines N first spaces on an outer peripheral side of the connecting part, and M second spaces on an inner peripheral side of the connecting part,

wherein the N first spaces and the M second spaces are formed by removing a part of the substrate,

wherein M and N are each an integer of 1 or more,

wherein a relationship MEN is satisfied, and

wherein the N first spaces and the M second spaces expose a ground plane or are disposed at a position adjacent to the ground plane, the ground plane being disposed in the substrate around at least one of the first high-frequency line or the second high-frequency line, and the ground plane is configured to function as a capacitive adjustment circuit.

2 . A structure comprising:

a substrate comprising a multilayer structure including a first plurality of layers, the first plurality of layers being stacked perpendicular to a surface of the substrate, each of the first plurality of layers being made of an insulator or a semi-insulating semiconductor;

a first high-frequency line disposed in the substrate, the first high-frequency line being disposed in a first layer of the first plurality of layers;

a second high-frequency line disposed in the substrate, the second high-frequency line having an extension direction different from an extension direction of the first high-frequency line, the second high-frequency line extending through the first plurality of layers; and

a connecting part connecting the first high-frequency line to the second high-frequency line and comprising a bend in an extension direction of the connecting part,

wherein the substrate defines N first spaces on an outer peripheral side of the connecting part, and M second spaces on an inner peripheral side of the connecting part,

wherein the N first spaces and the M second spaces are formed by removing a part of the substrate,

wherein M and N are each an integer of 1 or more,

wherein a relationship MEN is satisfied, and

wherein the N first spaces and the M second spaces expose at least one of the first high-frequency line or the second high-frequency line or are disposed at a position adjacent to at least one of the first high-frequency line or the second high-frequency line, and the N first spaces and the M second spaces are configured to provide an inductive adjustment.

3 . A structure comprising:

a substrate comprising a multilayer structure including a first plurality of layers, the first plurality of layers being stacked perpendicular to a surface of the substrate, each of the first plurality of layers being made of an insulator or a semi-insulating semiconductor;

a first high-frequency line disposed in the substrate, the first high-frequency line being disposed in a first layer of the first plurality of layers;

a second high-frequency line disposed in the substrate, the second high-frequency line having an extension direction different from an extension direction of the first high-frequency line, the second high-frequency line extending through the first plurality of layers; and

a connecting part connecting the first high-frequency line to the second high-frequency line and comprising a bend in an extension direction of the connecting part,

wherein the substrate defines N first spaces on an outer peripheral side of the connecting part, and M second spaces on an inner peripheral side of the connecting part,

wherein the N first spaces and the M second spaces are formed by removing a part of the substrate,

wherein M and N are each an integer of 1 or more; and

a relationship MEN is satisfied.

4 . The structure according to claim 3 , wherein:

a total volume of the M second spaces is smaller than a total volume of the N first spaces.

5 . The structure according to claim 3 ,

wherein the first high-frequency line and the second high-frequency line are any one of a microstrip line, a coplanar line, or a strip line.

6 . The structure according to claim 3 , wherein:

the first high-frequency line is a strip line; and

the second high-frequency line is a pseudo-coaxial line comprising a signal via that penetrates the substrate and a ground plane surrounding the signal via; and

the substrate fills a gap between the signal via and the ground plane.

7 . The structure according to claim 6 , wherein:

the M second spaces expose the ground plane or are disposed at a position adjacent to the ground plane;

the ground plane is disposed in the substrate around both signal lines of the first high-frequency line and the second high-frequency line; and

the N first spaces expose the first high-frequency line at a position adjacent to the second high-frequency line via the substrate.

8 . The structure according to claim 3 ,

wherein the N first spaces and the M second spaces are filled with an insulator having a dielectric constant smaller than a dielectric constant of the substrate or filled with a semi-insulating semiconductor having a dielectric constant smaller than the dielectric constant of the substrate.

9 . The structure according to claim 3 , wherein:

the N first spaces are filled with a first insulator having a dielectric constant smaller than a dielectric constant of the substrate or filled with a first semi-insulating semiconductor having a dielectric constant smaller than the dielectric constant of the substrate;

the M second spaces are filled with a second insulator having a dielectric constant smaller than a dielectric constant of the substrate or filled with a second semi-insulating semiconductor having a dielectric constant smaller than the dielectric constant of the substrate; and

the dielectric constant of the first insulator or the dielectric constant of the first semi-insulating semiconductor in the N first spaces is smaller than the dielectric constant of the second insulator or the dielectric constant of the second semi-insulating semiconductor in the M second spaces.

10 . The structure according to claim 3 ,

wherein the M second spaces are formed by removing a part of a second layer of the first plurality of layers, and the second layer is different from the first layer in which the first high-frequency line is disposed.