IP Library Granted Patent US 12706365
Granted Patent B2
US 12706365 · App. 18/718,932 · Granted Aug 11, 2026

Device for a transition of a high-frequency connection between a strip conductor connection and a waveguide, high-frequency arrangement, and radar system

Inventors: Klaus Baur (Mietingen, DE); Minh Nhat Pham (Leinfelden-Echterdingen, DE)
Assignee: Robert Bosch GmbH
H01P5/08H01P3/08H01P3/12H01Q1/3233H01Q9/0407
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Quick Facts
Patent No.
US 12706365
App. No.
18/718,932
Granted
Aug 11, 2026
Kind
B2
Abstract

A transition between a strip conductor connection and a waveguide for a high-frequency connection. A strip conductor connection is arranged on a carrier substrate and is adjoined by a transition to a waveguide structure integrated into the carrier substrate. This waveguide structure integrated into the carrier substrate is adjoined by a waveguide on an outer side of the carrier substrate.

Claims (30)

1 . A high-frequency arrangement, comprising:

a device for a transition of a high-frequency connection between a strip conductor connection and a waveguide, including:

an electrically insulating carrier substrate with a top side and a bottom side opposite the top side,

wherein the carrier substrate includes a first portion with a strip conductor structure, a second portion with a waveguide structure integrated into the carrier substrate, and a third portion with a waveguide arranged on an outer side of the carrier substrate,

wherein the second portion is arranged between the first portion and the third portion,

wherein the waveguide structure, integrated into the second portion of the carrier substrate, and the waveguide arranged on the carrier substrate at least partially overlap in an overlap region,

wherein an aperture is provided in the overlap region in an electrically conductive coating on the top side of the carrier substrate for the waveguide structure integrated into the second portion of the carrier substrate, and

wherein an electrically conductive connection element is provided on an edge of the aperture and is configured to electrically contact the electrically conductive coating on the top side and an electrically conductive coating on the bottom side of the carrier substrate with one another; and

a monolithic microwave integrated circuit arranged in the first portion on the top side of the carrier substrate.

2 . A device for a transition of a high-frequency connection between a strip conductor connection and a waveguide, comprising:

an electrically insulating carrier substrate with a top side and a bottom side opposite the top side;

wherein the carrier substrate includes a first portion with a strip conductor structure, a second portion with a waveguide structure integrated into the carrier substrate, and a third portion with a waveguide arranged on an outer side of the carrier substrate,

wherein the second portion is arranged between the first portion and the third portion,

wherein the waveguide structure, integrated into the second portion of the carrier substrate, and the waveguide arranged on the carrier substrate at least partially overlap in an overlap region,

wherein an aperture is provided in the overlap region in an electrically conductive coating on the top side of the carrier substrate for the waveguide structure integrated into the second portion of the carrier substrate, and

wherein an electrically conductive connection element is provided on an edge of the aperture and is configured to electrically contact the electrically conductive coating on the top side and an electrically conductive coating on the bottom side of the carrier substrate with one another.

3 . The device according to claim 2 , wherein the strip conductor structure in the first portion includes an electrically conductive path on the top side and the electrically conductive coating on the bottom side of the carrier substrate, and wherein the waveguide in the third portion is arranged on the top side of the carrier substrate.

4 . The device according to claim 2 , wherein the waveguide structure, integrated into the second portion of the carrier substrate includes an electrically conductive coating on the top side and the bottom side, and wherein lateral boundaries of the waveguide structure, integrated into the second portion of the carrier substrate, are formed using electrically conductive through-connection elements between the top side and the bottom side.

5 . The device according to claim 2 , wherein an electrically conductive adjustment element is provided in an inner region of the aperture.

6 . The device according to claim 2 , wherein the waveguide of the third portion includes at least one antenna element.

7 . A radar system, comprising:

a high-frequency arrangement including:

a device for a transition of a high-frequency connection between a strip conductor connection and a waveguide, including:

an electrically insulating carrier substrate with a top side and a bottom side opposite the top side,

wherein the carrier substrate includes a first portion with a strip conductor structure, a second portion with a waveguide structure integrated into the carrier substrate, and a third portion with a waveguide arranged on an outer side of the carrier substrate,

wherein the second portion is arranged between the first portion and the third portion,

wherein the waveguide structure, integrated into the second portion of the carrier substrate, and the waveguide arranged on the carrier substrate at least partially overlap in an overlap region,

wherein an aperture is provided in the overlap region in an electrically conductive coating on the top side of the carrier substrate for the waveguide structure integrated into the second portion of the carrier substrate, and

wherein an electrically conductive connection element is provided on an edge of the aperture and is configured to electrically contact the electrically conductive coating on the top side and an electrically conductive coating on the bottom side of the carrier substrate with one another; and

a monolithic microwave integrated circuit arranged in the first portion on the top side of the carrier substrate.