Surface emitting laser device, electronic device, and manufacturing method for surface emitting laser device
Provided are a surface emitting laser device and an electronic device that includes the surface emitting laser device. The is a surface emitting laser device includes an element unit including an element arrangement area in which a plurality of surface emitting laser elements is arranged, and an adjacent area adjacent to the element arrangement area. The surface emitting laser device further includes a driver unit including a driver IC, a plurality of first bumps that individually joins each of the plurality of surface emitting laser elements and the driver unit; and a plurality of second bumps that joins the adjacent area and the driver unit. Each of the plurality of first bumps and each of the plurality of second bumps include a conductive material that becomes difficult to be crushed by pressurization. The plurality of second bumps is arranged at a higher density than the plurality of first bumps.
1 . A surface emitting laser device, comprising:
an element unit including:
an element arrangement area that includes a plurality of surface emitting laser elements, and
an adjacent area adjacent to the element arrangement area;
a driver unit including a driver IC;
a plurality of first bumps, wherein each first bump of the plurality of first bumps joins the driver unit to a respective surface emitting laser element of the plurality of surface emitting laser elements; and
a plurality of second bumps that joins the driver unit to the adjacent area, wherein
each first bump of the plurality of first bumps and each second bump of the plurality of second bumps include a conductive material,
the conductive material shifts from a softened state to a cured state by pressurization,
an arrangement density of the plurality of second bumps is higher than an arrangement density of the plurality of first bumps, and
an interval between two adjacent second bumps of the plurality of second bumps is less than an interval between two adjacent first bumps of the plurality of first bumps.
2 . The surface emitting laser device according to claim 1 , wherein
each of the plurality of surface emitting laser elements has a mesa structure that protrudes toward a side of the driver unit,
the mesa structure includes an electrode at a top of the mesa structure, and
each first bump of the plurality of first bumps joins the driver unit to the electrode of a respective surface emitting laser element of the plurality of surface emitting laser elements.
3 . The surface emitting laser device according to claim 1 , wherein the conductive material includes metal particle paste.
4 . The surface emitting laser device according to claim 1 , wherein the conductive material includes metal nano paste.
5 . The surface emitting laser device according to claim 1 , wherein the arrangement density of the plurality of second bumps is higher than an arrangement density of the plurality of surface emitting laser elements.
6 . The surface emitting laser device according to claim 1 , wherein
the adjacent area includes:
a first area on a first side of the element unit, and
a second area on a second side of the element unit, and
the element arrangement area is between the first area of the adjacent area and the second area of the adjacent area.
7 . The surface emitting laser device according to claim 1 , wherein
the element unit has a multilayer structure including:
a first multilayer film reflector,
a second multilayer film reflector, and
an active layer between the first multilayer film reflector and the second multilayer film reflector,
the element arrangement area corresponds to a first part of the multilayer structure in an in-plane direction of the element unit, and
the adjacent area corresponds to a second part of the multilayer structure in the in-plane direction.
8 . The surface emitting laser device according to claim 1 , wherein
the driver unit includes:
a semiconductor board that includes the driver IC; and
a wiring layer on the semiconductor board,
the wiring layer is joined to the plurality of surface emitting laser elements via the plurality of first bumps, and
the wiring layer is further joined to the adjacent area via the plurality of second bumps.
9 . An electronic device, comprising:
a surface emitting laser device that includes:
an element unit including:
an element arrangement area that includes a plurality of surface emitting laser elements, and
an adjacent area adjacent to the element arrangement area;
a driver unit including a driver IC;
a plurality of first bumps, wherein each first bump of the plurality of first bumps joins the driver unit to a respective surface emitting laser element of the plurality of surface emitting laser elements; and
a plurality of second bumps that joins the driver unit to the adjacent area, wherein
each first bump of the plurality of first bumps and each second bump of the plurality of second bumps include a conductive material,
the conductive material shifts from a softened state to a cured state by pressurization,
an arrangement density of the plurality of second bumps is higher than an arrangement density of the plurality of first bumps, and
an interval between two adjacent second bumps of the plurality of second bumps is less than an interval between two adjacent first bumps of the plurality of first bumps.
10 . A manufacturing method of a surface emitting laser device, the manufacturing method comprising:
joining a driver unit to each surface emitting laser element of plurality of surface emitting laser elements via a respective first bump of a plurality of first bumps, wherein
the surface emitting laser device includes:
the driver unit; and
an element unit including:
an element arrangement area, and
an adjacent area adjacent to the element arrangement area,
the element arrangement area includes the plurality of surface emitting laser elements, and
the driver unit includes a driver IC; and
joining the driver unit to the adjacent area via a plurality of second bumps, wherein
each first bump of the plurality of first bumps and each second bump of the plurality of second bumps include a conductive material,
the conductive material shifts from a softened state to a cured state by pressurization,
an arrangement density of the plurality of second bumps is higher than an arrangement density of the plurality of first bumps, and
an interval between two adjacent second bumps of the plurality of second bumps is less than an interval between two adjacent first bumps of the plurality of first bumps.
11 . The manufacturing method of the surface emitting laser device according to claim 10 , further comprising:
arranging, prior to the joining of the driver unit to the plurality of surface emitting laser elements, the plurality of first bumps in an area of the driver unit corresponding to the element arrangement area; and
arranging, prior to the joining of the driver unit to the adjacent area, the plurality of second bumps at the arrangement density higher the arrangement density of the plurality of first bumps, wherein the plurality of second bumps is arranged in an area of the driver unit corresponding to the adjacent area.