IP Library Granted Patent US 12706526
Granted Patent B2
US 12706526 · App. 18/893,118 · Granted Aug 11, 2026

Gate driving device and power converter

Inventor: Takaharu Ishibashi (Kyoto, JP)
Assignee: ROHM CO., LTD.
H02M1/08H02M1/0054H03K17/165H03K2217/0063H03K2217/0072
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Quick Facts
Patent No.
US 12706526
App. No.
18/893,118
Granted
Aug 11, 2026
Kind
B2
Abstract

A gate driving device comprises: a gate driving unit that outputs power for switching between on and off of a semiconductor switching element; a speed control unit that controls at least one of a turn-on speed and a turn-off speed of the semiconductor switching element; and a speed switching unit that switches at least one of the turn-on speed and the turn-off speed in response to an instruction from the speed control unit. The speed switching unit includes: a plurality of impedance elements (gate resistors, for example); and switches that control power output from the gate driving unit and to pass through corresponding ones of the plurality of impedance elements. The speed control unit controls the switches on the basis of an output current flowing in the semiconductor switching element.

Claims (44)

1 . A gate driving device comprising:

a gate driving unit configured to output power for switching between on and off of a semiconductor switching element,

a speed control unit configured to control at least one of a turn-on speed and a turn-off speed of the semiconductor switching element; and

a speed switching unit configured to switch at least one of the turn-on speed and the turn-off speed in response to an instruction from the speed control unit, wherein

the speed switching unit includes:

a plurality of impedance elements; and

a switch configured to control power output from the gate driving unit and to pass through a corresponding one of the plurality of impedance elements, and

the speed control unit controls the switch on the basis of an output current flowing in the semiconductor switching element, wherein

the speed control unit includes a sample hold circuit configured to hold a detection value of the output current or a voltage across the semiconductor switching element for a fixed period.

2 . The gate driving device according to claim 1 , wherein

the speed switching unit includes at least one of a gate resistor and a gate capacitor as the plurality of impedance elements.

3 . The gate driving device according to claim 1 , wherein

the speed switching unit includes:

a first speed switching unit configured to switch the turn-on speed; and

a second speed switching unit configured to switch the turn-off speed.

4 . The gate driving device according to claim 3 , further comprising:

a first diode configured to have an anode connected to an output terminal of the first speed switching unit and a cathode connected to a gate of the semiconductor switching element; and

a second diode configured to have a cathode connected to an output terminal of the second speed switching unit and an anode connected to the gate of the semiconductor switching element.

5 . The gate driving device according to claim 1 , wherein

the speed control unit includes a current estimation part configured to estimate the output current from a voltage across the semiconductor switching element or from a sense current responsive to the output current.

6 . The gate driving device according to claim 1 , wherein

the speed control unit controls the switch in response to acceptance of a current command value generated by a control device.

7 . The gate driving device according to claim 6 , wherein

the speed control unit reduces at least one of the turn-on speed and the turn-off speed to a minimum if the output current is larger than a threshold.

8 . The gate driving device according to claim 1 , wherein

the speed switching unit switches a gate resistance value or a gate capacitance value of the semiconductor switching element.

9 . A power converter comprising:

the gate driving device according to claim 1 ;

a control device configured to control the gate driving device; and

a semiconductor switching element configured to be turned on and off by the gate driving device.

10 . A gate driving device comprising:

a gate driving unit configured to output power for switching between on and off of a semiconductor switching element,

a speed control unit configured to control at least one of a turn-on speed and a turn-off speed of the semiconductor switching element; and

a speed switching unit configured to switch at least one of the turn-on speed and the turn-off speed in response to an instruction from the speed control unit, wherein

the speed switching unit includes:

a plurality of impedance elements; and

a switch configured to control power output from the gate driving unit and to pass through a corresponding one of the plurality of impedance elements, and

the speed control unit controls the switch on the basis of an output current flowing in the semiconductor switching element, wherein

the speed switching unit includes:

a first speed switching unit configured to switch the turn-on speed; and

a second speed switching unit configured to switch the turn-off speed, and

the gate driving device further comprises:

a first diode configured to have an anode connected to an output terminal of the first speed switching unit and a cathode connected to a gate of the semiconductor switching element; and

a second diode configured to have a cathode connected to an output terminal of the second speed switching unit and an anode connected to the gate of the semiconductor switching element.