Wideband current-scaled Doherty amplifier
A Doherty amplifier is provided with a lumped-element combiner that includes a first capacitor and an inductor. Should the inductor be coupled between an output terminal of the main amplifier and an output node of the Doherty amplifier, the first capacitor couples between an output terminal of the auxiliary amplifier and the output node. Conversely, if the first capacitor is coupled between the output terminal of the main amplifier and the output node, then the inductor couples between the output terminal of the auxiliary amplifier and the output node. A current scaling ratio of the Doherty amplifier ranges from 0.4 to 0.6 to enhance the bandwidth.
1 . A Doherty amplifier, comprising:
a main amplifier configured to conduct a main amplifier current at a peak power of the Doherty amplifier;
an auxiliary amplifier configured to conduct an auxiliary amplifier current at the peak power of the Doherty amplifier, wherein a current scaling ratio as defined by a ratio of the auxiliary amplifier current to the main amplifier current is greater than or equal to 0.4 and less than or equal to 0.6;
an output node;
an inductor coupled between an output terminal of the main amplifier and the output node; and
a first capacitor coupled between an output terminal of the auxiliary amplifier and the output node, wherein the inductor is the only lumped-element reactance coupled between the output terminal of the main amplifier and the output node, and wherein the first capacitor is the only lumped-element reactance coupled between the output terminal of the auxiliary amplifier and the output node.
2 . The Doherty amplifier of claim 1 , further comprising:
a second capacitor coupled between the output terminal of the main amplifier and ground.
3 . The Doherty amplifier of claim 1 , further comprising:
a third capacitor coupled between the output node and ground.
4 . The Doherty amplifier of claim 1 , wherein a phase difference between the auxiliary amplifier current and the main amplifier current is less than 90°.
5 . The Doherty amplifier of claim 1 , wherein a phase difference between the auxiliary amplifier current and the main amplifier current is greater than 90°.
6 . The Doherty amplifier of claim 1 , further comprising:
a splitter configured to split an RF input signal into a first RF signal and a second RF signal, wherein the main amplifier is further configured to amplify the first RF signal and the auxiliary amplifier is further configured to amplify the second RF signal.
7 . The Doherty amplifier of claim 6 , wherein the RF input signal is an N77 frequency band signal.
8 . The Doherty amplifier of claim 1 , wherein the main amplifier is biased to operate as a class B amplifier and the auxiliary amplifier is biased to operate as a class C amplifier.
9 . The Doherty amplifier of claim 1 , wherein the main amplifier is biased to operate as a class AB amplifier and the auxiliary amplifier is biased to operate as a class C amplifier.
10 . The Doherty amplifier of claim 1 , wherein the Doherty amplifier is configured to form a power amplifier for a mobile device.
11 . A Doherty combiner semiconductor package for a Doherty amplifier, comprising:
a first terminal configured to couple to an output terminal of a main amplifier in the Doherty amplifier;
a second terminal configured to couple to an output terminal of an auxiliary amplifier in the Doherty amplifier;
a third terminal configured to couple to an output node of the Doherty amplifier;
an inductor coupled between the first terminal and the third terminal; and
a first capacitor coupled between the second terminal and the third terminal,
wherein the inductor and the first capacitor are the only lumped-element reactances in the Doherty combiner semiconductor package.
12 . The Doherty combiner semiconductor package of claim 11 , further comprising:
a fourth terminal configured to couple to ground.
13 . The Doherty combiner semiconductor package of claim 12 , wherein the Doherty combiner semiconductor package is a planar rectangular semiconductor package, and wherein the first terminal is adjacent a first corner of the planar rectangular semiconductor package, the second terminal is adjacent a second corner of the planar rectangular semiconductor package, the third terminal is adjacent a third corner of the planar rectangular semiconductor package, and the fourth terminal is adjacent a fourth corner of the planar rectangular semiconductor package.
14 . A Doherty amplifier, comprising:
a main amplifier configured to conduct a main amplifier current at a peak power of the Doherty amplifier;
an auxiliary amplifier configured to conduct an auxiliary amplifier current at the peak power of the Doherty amplifier, wherein a current ratio r c as defined by a ratio of the auxiliary amplifier current to the main amplifier current is greater than or equal to 0.4 and less than or equal to 0.6;
an output node;
a first capacitor coupled between an output terminal of the main amplifier and the output node;
an inductor coupled between an output terminal of the auxiliary amplifier and the output node; and
a splitter configured to split an RF input signal into a first RF signal and a second RF signal, wherein the main amplifier is further configured to amplify the first RF signal and the auxiliary amplifier is further configured to amplify the second RF signal, and wherein the RF input signal is an N77 frequency band signal.
15 . The Doherty amplifier of claim 14 , further comprising:
a second capacitor coupled between the output node and ground.
16 . The Doherty amplifier of claim 14 , wherein a phase difference between the auxiliary amplifier current and the main amplifier current is less than 90°.
17 . The Doherty amplifier of claim 14 , wherein a phase difference between the auxiliary amplifier current and the main amplifier current is greater than 90°.
18 . The Doherty amplifier of claim 14 , wherein the main amplifier is biased to operate as a class B amplifier and the auxiliary amplifier is biased to operate as a class C amplifier.
19 . The Doherty amplifier of claim 14 , wherein the main amplifier is biased to operate as a class AB amplifier and the auxiliary amplifier is biased to operate as a class C amplifier.
20 . A method of operation for a Doherty amplifier, comprising:
splitting an RF input signal into a first RF signal and a second RF signal;
amplifying the first RF signal in a main amplifier of the Doherty amplifier to produce a main amplifier output signal, wherein the main amplifier is configured to conduct a main amplifier current at a peak power of the Doherty amplifier;
amplifying the second RF signal in an auxiliary amplifier of the Doherty amplifier to produce an auxiliary amplifier output signal, wherein the auxiliary amplifier is configured to conduct an auxiliary amplifier current at the peak power of the Doherty amplifier;
coupling the main amplifier output signal through an inductor to an output node of the Doherty amplifier; and
coupling the auxiliary amplifier output signal through a first capacitor to the output node, wherein splitting the RF input signal delays the second RF signal with respect to the first RF signal by a phase delay to cause a current scaling ratio of the auxiliary amplifier current to the main amplifier current to be within a range that is greater than or equal to 0.4 and less than or equal to 0.6.
21 . The method of claim 20 , further comprising:
coupling an output terminal of the main amplifier to ground through a second capacitor.
22 . The method of claim 21 , further comprising:
coupling the output node to ground through a third capacitor.
23 . The method of claim 20 , wherein the phase delay is less than 90°.
24 . The method of claim 20 , wherein the phase delay is greater than 90°.
25 . A Doherty amplifier, comprising:
a main amplifier configured to conduct a main amplifier current at a peak power of the Doherty amplifier;
an auxiliary amplifier configured to conduct an auxiliary amplifier current at the peak power of the Doherty amplifier, wherein a current scaling ratio as defined by a ratio of the auxiliary amplifier current to the main amplifier current is greater than or equal to 0.4 and less than or equal to 0.6;
an output node;
a capacitor coupled between an output terminal of the main amplifier and the output node; and
an inductor coupled between an output terminal of the auxiliary amplifier and the output node, wherein the capacitor is the only lumped-element reactance coupled between the output terminal of the main amplifier and the output node, and wherein the inductor is the only lumped-element reactance coupled between the output terminal of the auxiliary amplifier and the output node.
26 . The Doherty amplifier of claim 25 , wherein a phase difference between the auxiliary amplifier current and the main amplifier current is less than 90°.
27 . The Doherty amplifier of claim 25 , wherein a phase difference between the auxiliary amplifier current and the main amplifier current is greater than 90°.
28 . The Doherty amplifier of claim 25 , further comprising:
a splitter configured to split an RF input signal into a first RF signal and a second RF signal, wherein the main amplifier is further configured to amplify the first RF signal and the auxiliary amplifier is further configured to amplify the second RF signal.
29 . The Doherty amplifier of claim 28 , wherein the RF input signal is an N77 frequency band signal.
30 . The Doherty amplifier of claim 25 , wherein the main amplifier is biased to operate as a class B or AB amplifier and the auxiliary amplifier is biased to operate as a class C amplifier.