Systems for and methods for wideband isolated outputs

1 . A device comprising:

a first output for a first radio frequency (RF) signal;

a second output for a second RF signal;

a first transistor having a first source/drain; and

a second transistor having a first source/drain, wherein the first source/drain of the first transistor is coupled to the first source/drain of the second transistor and wherein the first and second transistors are disposed between the first output and the second output, wherein:

the first output comprises a first tee-filter configured to preferentially pass the first RF signal to a first connection terminal; and

the second output comprises a second tee-filter configured to preferentially pass the second RF signal to a second connection terminal.

2 . The device of claim 1 , comprising an input coupled to:

a gate of a third transistor, a first source/drain of the third transistor coupled with the first source/drain of the first transistor and the first source/drain of the second transistor.

3 . The device of claim 1 , wherein:

the second source/drain of the first transistor is coupled with a first terminal of a first inductor, a second terminal of the first inductor coupled with a first voltage node; and

the second source/drain of the second transistor is coupled with a first terminal of a second inductor, the second terminal of the second inductor coupled with the first voltage node.

4 . The device of claim 1 , wherein:

the first source/drain of the first transistor and the first source/drain of the second transistor is coupled with a first source/drain of a third transistor;

a first gate of the first transistor is coupled with a first voltage node;

a second gate of the second transistor is coupled with a second voltage node; and

the second source/drain of the third transistor is coupled with a third voltage node.

5 . The device of claim 4 , wherein:

a voltage of the first voltage node differs from a voltage of the second voltage node and a voltage of the third voltage node.

6 . The device of claim 4 , wherein:

a voltage of the second voltage node does not differ from a voltage of the third voltage node.

7 . The device of claim 1 , wherein a first parameter of the first tee-filter varies from a second parameter of the second tee-filter.

8 . The device of claim 1 , wherein:

a magnitude of an isolation between the first connection terminal and the second connection terminal is −20 dB or greater at:

a first center frequency of the first RF signal; and

a second center frequency of the second RF signal.

9 . The device of claim 1 , wherein:

a first center frequency of the first RF signal varies from a second center frequency of the second RF signal by more than 1.5 GHz.

10 . The device of claim 1 , wherein:

the first RF signal and the second RF signal are derived from a same antenna.

11 . The device of claim 1 , wherein:

the first output and the second output are outputs of a power divider.

12 . A system, comprising:

an amplifier comprising:

a first output for a first radio frequency (RF) signal; and

a second output for a second RF signal; and

a cascode circuit comprising:

a first source/drain of a first transistor coupled with the first output;

a first source/drain of a second transistor coupled with the second output; and

a first source/drain of a third transistor coupled with a second source/drain of the first transistor and a second source/drain of the second transistor, wherein:

a magnitude of an isolation between a first connection terminal of a first filter configured to preferentially pass the first RF signal and a second filter configured to preferentially pass the second RF signal, is −20 dB or greater at:

a first center frequency of the first RF signal; and

a second center frequency of the second RF signal.

13 . The system of claim 12 , wherein:

the first filter comprises a first tee-filter configured to preferentially pass the first RF signal to the first connection terminal; and

the second filter comprises a second tee-filter configured to preferentially pass the second RF signal to the second connection terminal.

14 . The system of claim 12 , wherein the first RF signal and the second RF signal are derived from a same antenna.

15 . The system of claim 12 , wherein a first center frequency of the first RF signal varies from a second center frequency of the second RF signal by more than 1.5 GHZ.

16 . The system of claim 12 , wherein:

the first output comprises a first tee-filter configured to preferentially pass the first RF signal to a first connection terminal; and

the second output comprises a second tee-filter configured to preferentially pass the second RF signal to a second connection terminal, wherein:

a first parameter of the first tee-filter varies from a second parameter of the second tee-filter.

17 . A method comprising:

receiving, at a gate of a first transistor, a first signal comprising:

first content centered about a first frequency; and

second content centered about a second frequency;

receiving, at a first source/drain of a second transistor, the first content;

receiving, at a first source/drain of a third transistor, the second content, wherein:

the first source/drain of the first transistor is coupled to the first source/drain of the second transistor and wherein the first and second transistors are disposed between a first output and a second output;

the first content and the second content comprise radio frequency content; and

the first frequency exceeds the second frequency by 1.5 GHz.

18 . The method of claim 17 , comprising:

receiving, at a second gate of the second transistor and a third gate of the third transistor, a non-zero DC voltage.

19 . A device comprising:

a first output for a first radio frequency (RF) signal;

a second output for a second RF signal;

a first transistor having a first source/drain;

a second transistor having a first source/drain, wherein the first source/drain of the first transistor is coupled to the first source/drain of the second transistor and wherein the first and second transistors are disposed between the first output and the second output; and

a first center frequency of the first RF signal varies from a second center frequency of the second RF signal by more than 1.5 GHz.

20 . A system, comprising:

an amplifier comprising:

a first output for a first radio frequency (RF) signal; and

a second output for a second RF signal; and

a cascode circuit comprising:

a first source/drain of a first transistor coupled with the first output;

a first source/drain of a second transistor coupled with the second output; and

a first source/drain of a third transistor coupled with a second source/drain of the first transistor and a second source/drain of the second transistor, wherein:

the first output comprises a first tee-filter configured to preferentially pass the first RF signal to a first connection terminal; and

the second output comprises a second tee-filter configured to preferentially pass the second RF signal to a second connection terminal.

21 . A system, comprising:

an amplifier comprising:

a first output for a first radio frequency (RF) signal; and

a second output for a second RF signal; and

a cascode circuit comprising:

a first source/drain of a first transistor coupled with the first output;

a first source/drain of a second transistor coupled with the second output; and

a first source/drain of a third transistor coupled with a second source/drain of the first transistor and a second source/drain of the second transistor, wherein:

a first center frequency of the first RF signal varies from a second center frequency of the second RF signal by more than 1.5 GHz.

22 . A system, comprising:

an amplifier comprising:

a first output for a first radio frequency (RF) signal; and

a second output for a second RF signal; and

a cascode circuit comprising:

a first source/drain of a first transistor coupled with the first output;

a first source/drain of a second transistor coupled with the second output; and

a first source/drain of a third transistor coupled with a second source/drain of the

first transistor and a second source/drain of the second transistor, wherein:

the first output comprises a first tee-filter configured to preferentially pass the first RF signal to a first connection terminal;

the second output comprises a second tee-filter configured to preferentially pass the second RF signal to a second connection terminal; and

a first parameter of the first tee-filter varies from a second parameter of the second tee-filter.