Piezoelectric vibrating substrate and piezoelectric vibrating element
A piezoelectric vibrating device includes a piezoelectric layer composed of a bulk piezoelectric material, a lower electrode on a first surface of the piezoelectric layer and a supporting substrate bonded with the lower electrode.
1 . A piezoelectric vibrating substrate comprising:
a piezoelectric layer comprising a bulk piezoelectric material and having a first surface and a second surface on a opposite side of said first surface;
a lower electrode on said first surface of said piezoelectric layer;
a high-rigidity ceramic plate bonded with said lower electrode; and
a supporting substrate bonded with said high-rigidity ceramic plate.
2 . The piezoelectric vibrating substrate of claim 1 , further comprising an amorphous layer present along an interface between said lower electrode and said high-rigidity ceramic plate.
3 . The piezoelectric vibrating substrate of claim 1 , further comprising an amorphous layer present along an interface between said high-rigidity ceramic plate and said supporting substrate.
4 . The piezoelectric vibrating substrate of claim 1 , further comprising an intermediate layer between said lower electrode and said high-rigidity ceramic plate.
5 . The piezoelectric vibrating substrate of claim 1 , further comprising an intermediate layer between said high-rigidity ceramic plate and said supporting substrate.
6 . The piezoelectric vibrating substrate of claim 1 , further comprising an upper electrode on said second surface of said piezoelectric layer.
7 . A piezoelectric vibrating substrate comprising:
a piezoelectric layer comprising a bulk piezoelectric material and having a first surface and a second surface on an opposite side of said first surface;
a lower electrode on said first surface of said piezoelectric layer;
a supporting substrate; and
an intermediate layer on a surface of said supporting substrate,
wherein said intermediate layer comprises at least one of silicon oxide, tantalum pentoxide, titanium oxide, zirconium oxide, hafnium oxide, niobium oxide, bismuth oxide, alumina, magnesium oxide, aluminum nitride, silicon nitride, and silicon, and
wherein an amorphous layer is present along a direct bonding interface of said lower electrode and said intermediate layer or along a direct bonding interface within said intermediate layer.
8 . A piezoelectric vibrating device comprising:
said piezoelectric vibrating substrate of claim 7 ; and
an upper electrode on said second surface of said piezoelectric layer.