Surface acoustic wave device with shared reflector and temperature compensation layer
A surface acoustic wave device can include a piezoelectric layer, first and second interdigital transducer electrodes in electrical communication with the piezoelectric layer, a reflector positioned between the first and second interdigital transducer electrodes such that the first and second interdigital transducer electrodes and the reflector are aligned along a longitudinal direction, and a temperature compensation layer over the first and second interdigital transducer electrodes and the reflector. The temperature compensation layer has a first region with a first thickness overlapping at least the first interdigital transducer electrode and a first portion of the reflector, a second region with a second thickness overlapping at least the second interdigital transducer electrode and a second portion of the reflector, and a sidewall between the first and second regions. The first thickness is greater than the second thickness. At least a portion of the sidewall extending non-perpendicular to the longitudinal direction.
1 . A surface acoustic wave device comprising:
a piezoelectric layer;
a first interdigital transducer electrode and a second interdigital transducer electrode in electrical communication with the piezoelectric layer;
a reflector positioned between the first and second interdigital transducer electrodes such that the first interdigital transducer electrode, the second interdigital transducer electrode, and the reflector are aligned along a longitudinal direction; and
a temperature compensation layer over the first interdigital transducer electrode, the second interdigital transducer electrode, and the reflector, the temperature compensation layer having a first region with a first thickness overlapping at least the first interdigital transducer electrode and a first portion of the reflector, a second region with a second thickness overlapping at least the second interdigital transducer electrode and a second portion of the reflector, and a sidewall between the first region and the second region, the first thickness being greater than the second thickness, at least a portion of the sidewall extending non-perpendicular to the longitudinal direction.
2 . The surface acoustic wave device of claim 1 wherein fingers of the reflector extend in a transverse direction perpendicular to the longitudinal direction.
3 . The surface acoustic wave device of claim 2 wherein the sidewall overlaps at least one finger of the fingers and one spacing between the finger and an adjacent finger.
4 . The surface acoustic wave device of claim 2 wherein the sidewall extends in a direction that is angled in a range between 1° and 15° from the transverse direction.
5 . The surface acoustic wave device of claim 2 wherein the sidewall has a plurality of angled sections that are angled relative to a respective adjacent section.
6 . The surface acoustic wave device of claim 5 wherein each section of the plurality of angled sections is angled relative to the transverse direction.
7 . The surface acoustic wave device of claim 1 wherein a difference between the first thickness and the second thickness is in a range between 100 nm and 500 nm.
8 . The surface acoustic wave device of claim 1 wherein a difference between the first thickness and the second thickness is in a range between 100 nm and 300 nm.
9 . The surface acoustic wave device of claim 1 wherein the sidewall is sloped from the first region to the second region.
10 . The surface acoustic wave device of claim 1 further comprising a third interdigital transducer electrode coupled longitudinally with the first and second interdigital transducer electrodes, and a second reflector between the second interdigital transducer electrode and the third interdigital transducer electrode.
11 . The surface acoustic wave device of claim 10 wherein the temperature compensation layer further includes a third region having a third thickness that overlaps at least the third interdigital transducer electrode and a portion of the second reflector, and a second sidewall between the second region and the third region, the third thickness is different from the second thickness.
12 . The surface acoustic wave device of claim 1 wherein the first and second interdigital transducer electrodes have different lateral sizes.
13 . A surface acoustic wave device comprising:
a piezoelectric layer;
a first interdigital transducer electrode and a second interdigital transducer electrode in electrical communication with the piezoelectric layer;
a reflector positioned between the first and second interdigital transducer electrodes, the reflector including a plurality of fingers extending in a first direction; and
a temperature compensation layer over the first interdigital transducer electrode, the second interdigital transducer electrode, and the reflector, the temperature compensation layer having a first region with a first thickness overlapping at least the first interdigital transducer electrode and a first portion of the reflector, a second region with a second thickness overlapping at least the second interdigital transducer electrode and a second portion of the reflector, and a sidewall between the first region and the second region, the first thickness being different from the second thickness, at least a portion of the sidewall extending in a second direction non-parallel to the first direction.
14 . The surface acoustic wave device of claim 13 wherein the second direction is angled in a range between 1° and 15° from the first direction.
15 . The surface acoustic wave device of claim 13 wherein the sidewall overlaps at least one finger of the fingers and one spacing between the finger and an adjacent finger.
16 . The surface acoustic wave device of claim 13 wherein the sidewall has a plurality of angled sections that are angled relative to a respective adjacent section.
17 . The surface acoustic wave device of claim 16 wherein each section of the plurality of angled sections is angled relative to the first direction.
18 . The surface acoustic wave device of claim 16 wherein a difference between the first thickness and the second thickness is in a range between 100 nm and 500 nm.
19 . The surface acoustic wave device of claim 16 wherein the sidewall is sloped from the first region to the second region.
20 . A surface acoustic wave device comprising:
a piezoelectric layer;
a first interdigital transducer electrode and a second interdigital transducer electrode in electrical communication with the piezoelectric layer;
a reflector positioned laterally between the first and second interdigital transducer electrodes in a longitudinal direction, the reflector including fingers extending in a transverse direction perpendicular to the longitudinal direction; and
a temperature compensation layer over the first interdigital transducer electrode, the second interdigital transducer electrode, and the reflector, the temperature compensation layer having a first region over the first interdigital transducer electrode and a first portion of the reflector, a second region over at least the second interdigital transducer electrode and a second portion of the reflector, and a sidewall between the first region and the second region, the sidewall overlapping at least one finger of the fingers and one spacing between the finger and an adjacent finger.