Solid-state imaging element and imaging device
Provided are a solid-state imaging element and an imaging device that include a plurality of pixel regions that include a plurality of pixels, and a plurality of first charge storage units corresponding to the respective pixel regions, wherein a plurality of first pixels in the pixel region each include a photoelectric conversion unit, and a first element that is brought into a conductive state or a non-conductive state with a photoelectric conversion unit of a pixel adjacent in at least one of vertical and horizontal directions, and a second pixel in the pixel region includes a photoelectric conversion unit, and a first element that is brought into a conductive state or a non-conductive state with a photoelectric conversion unit of a pixel adjacent to the first pixel in at least one of vertical and horizontal directions, and a first charge storage element.
1 . A solid-state imaging element, comprising:
a plurality of pixel regions; and
a plurality of charge storage units, wherein
each charge storage unit in the plurality of charge storage units corresponds to a respective pixel region of the plurality of pixel regions,
a pixel region of the plurality of pixel regions includes a plurality of pixels in a matrix,
the plurality of pixels comprises a plurality of first pixels, and a second pixel,
each first pixel of the plurality of first pixels in the pixel region comprises:
a photoelectric conversion unit; and
a first element,
the second pixel in the pixel region includes:
the photoelectric conversion unit;
the first element; and
a first charge storage element that is in one of conductive state or a non-conductive state with a charge storage unit of the plurality of charge storage units,
the first element in each pixel of the plurality of pixels either
brings a connection between photoelectric conversion units in respective adjacent pixels adjacent in a first direction in the plurality of pixels, into one of the conductive state or the non-conductive state, or
brings a connection between photoelectric conversion units in respective adjacent pixels adjacent in a second direction in the plurality of pixels, into one of the conductive state or the non-conductive state, and
the first direction is different from the second direction.
2 . The solid-state imaging element according to claim 1 , wherein the first element in the each pixel in the pixel region and the first charge storage element in the pixel region are in the non-conductive state to start photoelectric conversion in the photoelectric conversion unit in the each pixel in the pixel region.
3 . The solid-state imaging element according to claim 2 , wherein, subsequent to a photoelectric conversion period of the photoelectric conversion unit of a pixel of the plurality of first pixels, the first element of the pixel is in the conductive state with the photoelectric conversion unit of an adjacent pixel of the plurality of first pixels in the pixel region.
4 . The solid-state imaging element according to claim 3 , wherein subsequent to the conductive state of the pixel of the plurality of first pixels, the first charge storage element is in the conductive state.
5 . The solid-state imaging element according to claim 3 , wherein subsequent to the conductive state of the pixel of the plurality of first pixels, the first element of the second pixel is in the non-conductive state, and the first charge storage element is in the conductive state.
6 . The solid-state imaging element according to claim 1 , wherein accumulated charges from photoelectric conversion for each pixel region of the plurality of pixel regions are transferred through the first element of the second pixel to the charge storage unit of the plurality of charge storage units.
7 . The solid-state imaging element according to claim 6 , wherein a positive potential of the photoelectric conversion unit, in the pixel region, on a side to which the accumulated charges are transferred is larger than a positive potential of the photoelectric conversion unit, in the pixel region, on a side which transfers the accumulated charges.
8 . The solid-state imaging element according to claim 7 , wherein
the photoelectric conversion unit includes a photogate, and
the photogate is configured to change a magnitude of the positive potential of the photoelectric conversion unit.
9 . The solid-state imaging element according to claim 6 , wherein
a pixel of the plurality of pixels includes a potential adjustment element that is connected between the photoelectric conversion unit of the pixel and the first element of the pixel, and
the accumulated charges from the pixel are transferred by the potential adjustment element of the pixel and the first element of the pixel.
10 . The solid-state imaging element according to claim 1 , wherein a photoelectric conversion period of the photoelectric conversion unit of a pixel of the plurality of pixels is controlled based on a weight value of the pixel of the plurality of pixels.
11 . The solid-state imaging element according to claim 10 , wherein
the pixel further includes a second element configured to discharge accumulated charges of the photoelectric conversion unit in the pixel, and
a non-discharge period of the accumulated charges by the second element is based on the weight value.
12 . The solid-state imaging element according to claim 1 , wherein the pixel region is changeable for the charge storage unit.
13 . The solid-state imaging element according to claim 12 , wherein a range of the pixel region for the charge storage unit is based on a calculation range of an operational process.
14 . The solid-state imaging element according to claim 1 , wherein
the first element of a pixel of the plurality of pixels is a transfer transistor that has one end connected to the photoelectric conversion unit of the pixel, and
the first element is in one of the conductive state or the non-conductive state by a positive voltage control signal.
15 . The solid-state imaging element according to claim 1 , wherein the photoelectric conversion unit of a pixel of the plurality of pixels and the first element of the pixel of the plurality of pixels are in different layers of the solid-state imaging element.
16 . The solid-state imaging element according to claim 1 , wherein the charge storage unit is a floating diffusion portion.
17 . The solid-state imaging element according to claim 16 , wherein the pixel region of the plurality of pixel regions further comprises:
a third element that is electrically connected to the first element of the second pixel;
a fourth element that is electrically connected to the charge storage unit;
a fifth element that is electrically connected to the third element; and
a sixth element configured to reset charges accumulated in the charge storage unit.
18 . The solid-state imaging element according to claim 17 , further comprising:
a second accumulation unit configured to accumulate accumulated charges from photoelectric conversion for each pixel region of the plurality of pixel regions; and
a seventh element configured to electrically connect the charge storage unit and the second accumulation unit.
19 . The solid-state imaging element according to claim 18 , further comprising an analog-to-digital conversion unit that is electrically connected to the fifth element, wherein the analog-to-digital conversion unit is configured to convert the accumulated charges from the photoelectric conversion for the each pixel region of the plurality of pixel regions into corresponding digital data.
20 . The solid-state imaging element according to claim 19 , wherein
each of the plurality of first pixels included in the pixel region is configured to receive light through one of a plurality of color filters, and
the pixel region is configured to discharge first accumulated charges corresponding to a first color filter of the plurality of color filters, prior to second accumulated charges corresponding to a second color filter of the plurality of color filters are transferred to the first charge storage unit.
21 . The solid-state imaging element according to claim 20 , wherein the photoelectric conversion unit comprises at least one of silicon, indium gallium arsenide, or organic germanium.
22 . The solid-state imaging element according to claim 21 , wherein
the pixel further includes a second element connected to the photoelectric conversion unit in the pixel,
each of the first element, the second element, the third element, the fourth element, the fifth element, and the sixth element comprises at least one of silicon, an oxide semiconductor, or an organic semiconductor.
23 . The solid-state imaging element according to claim 22 , further comprising an accumulation control circuit configured to control, based on a potential shape of the photoelectric conversion unit of the pixel, at least one of
reset of accumulated charges of the photoelectric conversion unit of the pixel, or
generation of accumulated charges of the photoelectric conversion unit of the pixel.
24 . An imaging device, comprising:
the solid-state imaging element according to claim 23 ; and
an operational processing unit configured to execute a convolution operation,
wherein a weight value of each pixel of the plurality of pixels and information on the pixel region corresponding to an operation range are supplied from the operational processing unit.
25 . The imaging device according to claim 24 , wherein
the operational processing unit is further configured to calculate a difference between first digital data and second digital data,
the analog-to-digital conversion unit is further configured to:
generate, subsequent to a photoelectric conversion period of the photoelectric conversion unit, the first digital data based on a positive weight value of an operational process;
transfer the generated first digital data to the charge storage unit;
generate, subsequent to the photoelectric conversion period of the photoelectric conversion unit, the second digital data based on an absolute value of a negative weight value of the operational process; and
transfer the generated second digital data to the charge storage unit.