IP Library Granted Patent US 12707173
Granted Patent B2
US 12707173 · App. 18/761,159 · Granted Aug 11, 2026

Photoelectric conversion device, photoelectric conversion system, moving body, and semiconductor substrate

Inventors: Hideo Kobayashi (Tokyo, JP); Takanori Suzuki (Tokyo, JP)
Assignee: Canon Kabushiki Kaisha
H04N25/78H04N25/704H10F39/8063H10F39/809H10F39/811H10W90/792
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Quick Facts
Patent No.
US 12707173
App. No.
18/761,159
Granted
Aug 11, 2026
Kind
B2
Abstract

A photoelectric conversion device has a pixel array on which a first pixel to a third pixel are arranged, wherein the first pixel and the second pixel are arranged to be parallel to a first direction, wherein the first pixel is located at a position separated from the second pixel in a positive direction of the first direction, wherein the first pixel is connected to a first signal processing circuit via a first signal line, wherein the second pixel is connected to a second signal processing circuit via a second signal line, wherein the first signal processing circuit and the second signal processing circuit are arranged to be parallel to the first direction, and wherein the first signal processing circuit is located at a position separated from the second signal processing circuit in a direction having a component of a negative direction of the first direction.

Claims (39)

1 . A photoelectric conversion device comprising:

a pixel array on which a plurality of pixels including a first pixel and a second pixel, each of which includes a photoelectric conversion portion, is arranged,

wherein at least part of the pixels included in the pixel array are pixels which output signals used for focus detection, each of which includes a photoelectric conversion portion partially shielded from light and arranged with respect to one microlens,

wherein the first pixel is connected to a first signal processing circuit via a first signal line,

wherein the second pixel is connected to a second signal processing circuit via a second signal line,

wherein, in a planar view the pixel array is viewed from an upper face of the pixel array and the photoelectric conversion device has a portion at which a third signal line extending from the first signal line to the first signal processing circuit intersects with the second signal line,

wherein the pixel array, the first signal line, and the second signal line are arranged on a first semiconductor substrate,

wherein the first signal processing circuit and the second signal processing circuit are arranged on a second semiconductor substrate,

wherein the first signal line and the first signal processing circuit are connected via a first bonded portion,

wherein the second signal line and the second signal processing circuit are connected via a second bonded portion, and

wherein the third signal line between the first bonded portion and the first signal processing circuit intersects with the second signal line in the planar view.

2 . The photoelectric conversion device according to claim 1 , wherein, in the planar view, the photoelectric conversion device has a portion at which a fourth signal line extending from the second signal line to the second signal processing circuit intersects with the first signal line.

3 . The photoelectric conversion device according to claim 1 , wherein each of the first bonded portion and the second bonded portion is formed to include an electrode penetrating the first semiconductor substrate and the second semiconductor substrate.

4 . The photoelectric conversion device according to claim 1 ,

wherein an insulating body of the first semiconductor substrate and an insulating body of the second semiconductor substrate are bonded at a bonded face, and

wherein each of the first bonded portion and the second bonded portion is formed of a metal of the first semiconductor substrate and a metal of the second semiconductor substrate bonded at the bonded face.

5 . The photoelectric conversion device according to claim 1 , wherein a detection unit for executing focus detection by using signals output from the plurality of photoelectric portions is arranged on the second semiconductor substrate.

6 . The photoelectric conversion device according to claim 1 , wherein a first color filter for covering the first pixel and a second color filter for covering the second pixel correspond to different colors.

7 . A photoelectric conversion system comprising:

the photoelectric conversion device according to claim 1 ; and

a signal processing unit configured to generate an image by using signals output from the photoelectric conversion device.

8 . A moving body including the photoelectric conversion device according to claim 1 , the moving body comprising a control unit configured to control movement of the moving body by using a signal output from the photoelectric conversion device.

9 . The photoelectric conversion device according to claim 1 , wherein, when a direction in which the first pixel and the second pixel are arranged is a positive direction of a first direction, a direction, in which one of arrangement positions of the first bonded portion and the second bonded portion is viewed from another one of the arrangement positions of the first bonded portion and the second bonded portion, includes a component of a negative direction of the first direction.

10 . The photoelectric conversion device according to claim 9 , wherein a direction in which the first signal processing circuit and the second signal processing circuit are arranged includes a component of a second direction orthogonal to the first direction.

11 . The photoelectric conversion device according to claim 1 ,

wherein the photoelectric conversion device includes a plurality of structure layers including a first structure layer and a second structure layer between the first semiconductor substrate and the second semiconductor substrate,

wherein the first structure layer is arranged between the first semiconductor substrate and the second structure layer, and the second structure layer is arranged between the first semiconductor substrate and the second semiconductor substrate, and

wherein the photoelectric conversion device includes a bonded portion at which a first conductive portion included in the first structure layer and a second conductive portion included in the second structure layer are bonded together.

12 . The photoelectric conversion device according to claim 11 ,

wherein a first plurality of interlayer connection portions formed of a conductive material is connected to the first conductive portion, and

wherein a second plurality of interlayer connection portions formed of a conductive material is connected to the second conductive portion.

13 . The photoelectric conversion device according to claim 11 ,

wherein the photoelectric conversion device further includes a bonded portion different from the bonded portion, and

wherein the different bonded portion and the bonded portion are connected to one wiring layer included in the first structure layer.

14 . The photoelectric conversion device according to claim 11 ,

wherein the photoelectric conversion device further includes a bonded portion different from the bonded portion, and

wherein the different bonded portion and the bonded portion are connected to one wiring layer included in the second structure layer.

15 . The photoelectric conversion device according to claim 1 , wherein the photoelectric conversion device executes arithmetic processing on signals read from the first signal line and signals read from the second signal line.

16 . The photoelectric conversion device according to claim 15 , wherein the arithmetic processing is addition processing.