Heater
A heater includes a ceramic base and a heat generating resistor. The ceramic base includes a plurality of crystal particles made of silicon nitride and a first grain boundary phase located between the plurality of crystal particles and containing oxides of a rare earth element and silicon. The heat generating resistor is located inside the ceramic base. The ceramic base includes a first region including an interface with the heat generating resistor and a second region farther away from the heat generating resistor than the first region. The distribution amount of the first grain boundary phase is greater in the first region than in the second region.
1 . A heater comprising:
a ceramic base comprising
a plurality of crystal particles made of silicon nitride, and
a first grain boundary phase located between the plurality of crystal particles and containing oxides of a rare earth element and silicon; and
a heat generating resistor located inside the ceramic base, wherein
the ceramic base comprises
a first region comprising an interface with the heat generating resistor, and
a second region farther away from the heat generating resistor than the first region, and
a distribution amount of the first grain boundary phase in the first region is greater than a distribution amount of the first grain boundary phase in the second region.
2 . The heater according to claim 1 , wherein
an average dimension of the first grain boundary phase in the first region is larger than an average dimension of the first grain boundary phase in the second region.
3 . The heater according to claim 1 , wherein:
the heat generating resistor comprises
a plurality of crystal particles made of a conductor element or silicon nitride,
a second grain boundary phase located between the plurality of crystal particles made of the conductor element or silicon nitride and containing oxides of a rare earth element and silicon;
a third region comprising an interface with the ceramic base, and
a fourth region farther away from the ceramic base than the third region; wherein
a distribution amount of the second grain boundary phase in the third region is greater than a distribution amount of the second grain boundary phase in the fourth region.
4 . The heater according to claim 3 , wherein
an average dimension of the second grain boundary phase in the third region is larger than an average dimension of the second grain boundary phase in the fourth region.
5 . The heater according to claim 3 , wherein
the third region has a greater content of the plurality of crystal particles made of silicon nitride than the fourth region.
6 . The heater according to claim 1 , wherein
the heat generating resistor comprises
a plurality of crystal particles made of silicon nitride,
a proportion of needle-like crystals in the plurality of crystal particles made of silicon nitride contained in the heat generating resistor is greater than a proportion of needle-like crystals in the crystal particles made of silicon nitride contained in the ceramic base.
7 . The heater according to claim 1 , wherein
an aspect ratio of the plurality of crystal particles made of the silicon nitride contained in the ceramic base is 1 or more and 2 or less.