Semiconductor device
This semiconductor device comprises: a plurality of power modules, each having a semiconductor element; a plurality of heat dissipation bases that are disposed via heat dissipation members on a heat dissipation surface side of the plurality of power modules, and that each have a heat dissipation fin; a frame having a plurality of openings; and a cover that covers the heat dissipation bases and the frame so as to form a refrigerant flow passage. The plurality of heat dissipation bases respectively close the plurality of openings. The cover has an elastic biasing part on a surface which contacts the heat dissipation fins. The heat dissipation bases are biased, by pressurization, toward the power modules.
1 . A semiconductor device comprising:
a plurality of power modules each having a semiconductor element;
a plurality of heat dissipation bases arranged on a radiation surface side of the plurality of power modules via a heat dissipation member interposed therebetween and having radiation fins;
a frame having a plurality of openings; and
a cover forming a refrigerant flow path by covering the heat dissipation base and the frame,
wherein the plurality of heat dissipation bases close the plurality of openings, respectively, and
wherein the cover has an elastic biasing part on a surface that contacts the radiation fin and biases the heat dissipation base by pressurizing the heat dissipation base toward the power module.
2 . The semiconductor device according to claim 1 ,
wherein the heat dissipation base closes the opening via a seal member, and
wherein the seal member is made of a material deformable in a direction from the heat dissipation base toward the power module.
3 . The semiconductor device according to claim 1 ,
wherein the heat dissipation base is provided on both sides of the power module.
4 . The semiconductor device according to claim 1 ,
wherein screwing parts are provided at four corners of the biasing part, respectively.
5 . The semiconductor device according to claim 1 ,
wherein the heat dissipation base closes the openings.
6 . The semiconductor device according to claim 1 ,
wherein each of the heat dissipation bases is provided with a plurality of power modules.
7 . The semiconductor device according to claim 1 ,
wherein the plurality of power modules are mounted on a printed board.
8 . The semiconductor device according to claim 7 ,
wherein the plurality of power modules are mounted on the printed board with one side thereof aligned with a predetermined reference plane,
wherein the plurality of power modules are arranged with respect to each heat dissipation base on one side of the plurality of power modules, and
wherein a single power module is arranged with respect to each heat dissipation base on the other side of the plurality of power modules.
9 . The semiconductor device according to claim 1 ,
wherein the plurality of power modules have calorific values different from each other, and
wherein the refrigerant flow path forms a flow path from the power module dissipating more heat toward the power module dissipating less heat.
10 . The semiconductor device according to claim 1 ,
wherein each of the refrigerant flow path has flow paths flowing in opposite directions, and
wherein one of the flow paths has a larger flow path width than that of the other of the flow paths.
11 . The semiconductor device according to claim 1 ,
wherein an elastic member is provided between the radiation fin and the cover.
12 . The semiconductor device according to claim 1 ,
wherein a brazing material is provided between the radiation fin and the cover.
13 . The semiconductor device according to claim 1 ,
wherein the radiation fin has a plurality of fin portions, and
wherein a fin portion arranged outside is higher than a fin portion arranged inside among the fin portions included in the radiation fin.