IP Library › Granted Patent US 12707613
Granted Patent B2
US 12707613 · App. 18/796,801 · Granted Aug 11, 2026

Electromagnetic wave absorption device

Inventors: Yong-Duck Chung (Daejeon, KR); Woo Jung Lee (Daejeon, KR); Daehyung Cho (Daejeon, KR); Tae-Ha Hwang (Daejeon, KR)
Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
H05K9/0086H01Q17/007H05K9/0084
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Quick Facts
Patent No.
US 12707613
App. No.
18/796,801
Granted
Aug 11, 2026
Kind
B2
Abstract

Provided is an electromagnetic wave absorption device. The electromagnetic wave absorption device includes a substrate and an electromagnetic wave absorption layer on the substrate. The electromagnetic wave absorption layer contains a chalcogenide material. The electromagnetic wave absorption layer contains Bi, Sb, Bi 2 Se 3 , Bi 2 Te 3 , Sb 2 Te 3 , Bi 1-x Sb x , Bi 1.1 Sb 0.9 Te 2 S, or (Bi,Sb) 2 (Se,Te,S) 3 . The electromagnetic wave absorption layer is on an entire surface of an upper surface of the substrate.

Claims (28)

1 . An electromagnetic wave absorption device comprising:

a substrate; and

an electromagnetic wave absorption layer on the substrate,

wherein the electromagnetic wave absorption layer includes a topological insulator layer and absorption patterns on the topological insulator layer, and

wherein the electromagnetic wave absorption layer contains a chalcogenide material.

2 . The device of claim 1 , wherein the electromagnetic wave absorption layer contains Bi, Sb, BizSe 3 , BizTe 3 , Sb 2 Te 3 , Bi 1-x Sb x , Bi 1.1 Sb 0.9 Te 2 S, or (Bi,Sb) 2 (Se,Te,S) 3 .

3 . The device of claim 1 , wherein the electromagnetic wave absorption layer is on an entire surface of an upper surface of the substrate.

4 . The device of claim 1 , wherein the electromagnetic wave absorption layer includes a meta-structure.

5 . The device of claim 4 , wherein the meta-structure has a cross shape.

6 . The device of claim 4 , wherein the meta-structure has a bar shape extending in a first direction.

7 . The device of claim 1 , wherein

the absorption patterns include a meta-structure.

8 . The device of claim 1 , wherein each of the absorption patterns has a cross shape.

9 . The device of claim 1 , wherein the electromagnetic wave absorption layer has a thickness of 1 nm to 10 mm.

10 . The device of claim 1 , wherein the topological insulator layer is on an entire surface of an upper surface of the substrate.

11 . The device of claim 10 , wherein the topological insulator layer contains the chalcogenide material, and

the absorption patterns contain the chalcogenide material.

12 . The device of claim 1 , wherein the topological insulator layer contains the chalcogenide material.

13 . The device of claim 1 , wherein the absorption patterns contain the chalcogenide material.

14 . The device of claim 1 , wherein each of the absorption patterns has a scissor shape in a planar view.

15 . A mobile phone, comprising:

a rear case;

a heat dissipation layer within the rear case;

an electromagnetic wave absorption device on the heat dissipation layer, the electromagnetic wave absorption device including:

a substrate,

a topological insulator layer on the substrate, the topological insulator layer containing a chalcogenide material, and

absorption patterns on the topological insulator layer; and

semiconductor elements on the electromagnetic wave absorption device.