Damascene digit lines

1 . A method comprising:

forming a plurality of dummy digit lines on a semiconductor substrate that are separated by a first set of vertical trenches, the dummy digit lines including a dummy digit line coupled to a bit line contact in the semiconductor substrate;

depositing a sacrificial insulating material in the first set of vertical trenches;

depositing a carbon material on the sacrificial insulating material;

removing a portion of the carbon material to form a second set of vertical trenches;

depositing an insulating fill material in the second set of vertical trenches;

removing a remainder of the carbon material to form a plurality of nitride material deposition spaces;

depositing a nitride material in the nitride material deposition spaces;

removing at least a portion of the semiconductor substrate to form plurality of cell contact deposition spaces extending through the nitride material and at least a portion of the height of the semiconductor substrate;

forming cell contacts in the cell contact deposition spaces;

removing the dummy digit lines to form a plurality of vertical openings;

removing at least a portion of the nitride material to form expanded vertical openings;

depositing a digit line insulating material in the expanded vertical openings to form digit line deposition spaces;

depositing a digit line material in the digit line deposition spaces to form digit lines; and

depositing a cap material on the digit lines.

2 . The method of claim 1 , wherein forming the dummy digit lines further comprises:

depositing a silicon material;

depositing a temporary capping material on the silicon material; and

removing a portion of the silicon material to form the dummy digit lines.

3 . The method of claim 1 , wherein removing at least a portion of the nitride material to form the expanded vertical openings further comprises removing some but not all of the nitride material.

4 . The method of claim 3 , wherein a remaining thickness of the nitride material is less than one nanometer.

5 . The method of claim 1 , wherein removing the at least portion of the nitride material to expand the vertical openings further comprises removing all of the nitride material.

6 . The method of claim 1 , wherein the digit line insulating material further comprises a low-K dielectric.

7 . The method of claim 1 , wherein the digit line material further comprises a metal digit line material.

8 . The method of claim 7 , wherein the metal digit line material further comprises tungsten, ruthenium, molybdenum, titanium, tantalum, cobalt, titanium nitride, tantalum nitride, tungsten silicide, cobalt silicide, tantalum silicide, doped silicon, doped germanium, or any combination thereof.

9 . The method of claim 1 , further comprising removing the dummy digit lines to form the vertical openings subsequent to forming the cell contacts.

10 . A method comprising:

forming a plurality of dummy digit lines on a semiconductor substrate that are separated by a first set of vertical trenches, the dummy digit lines including a dummy digit line coupled to a bit line contact in the semiconductor substrate;

depositing a sacrificial insulating material in the first set of vertical trenches;

depositing a carbon material on the sacrificial insulating material;

removing a portion of the carbon material to form a second set of vertical trenches;

depositing an insulating fill material in the second set of vertical trenches;

removing the remaining carbon material to form a plurality of nitride material deposition spaces;

depositing a nitride material in the nitride material deposition spaces;

removing at least a portion of the nitride material to form cell contact deposition spaces extending through the nitride material and at least a portion of the height of the semiconductor substrate;

forming cell contacts in the cell contact deposition spaces;

subsequent to forming the cell contacts, removing the dummy digit lines to form vertical openings having a first width;

expanding the vertical openings to create expanded vertical openings with a second width that is greater than the first width;

depositing a digit line insulating material in the expanded vertical openings having the second width to form digit line deposition spaces;

depositing a digit line material in the digit line deposition spaces to form digit lines; and

depositing a cap material on the digit lines.

11 . The method of claim 10 , wherein forming the digit line material in the digit line deposition space further comprises:

depositing the digit line material in the digit line deposition space; and

removing a portion of the digit line material in the digit line deposition space to form the digit lines that are recessed a distance in the digit line deposition space.

12 . The method of claim 11 , further comprising removing the portion of the digit line material by performing a dry etch or a wet etch to selectively remove the portion of the digit line material.

13 . The method of claim 10 , wherein removing the portion of the carbon material further comprises etching the portion of the carbon material with a wet etchant or a dry etchant.

14 . The method of claim 10 , wherein expanding the vertical openings further comprises etching a sidewall of the vertical openings with a wet etchant or a dry etchant.

15 . The method of claim 10 , wherein any combination, or all of, the sacrificial insulating material, the insulating fill material, the nitride material, the cap material, and an insulating material base layer are the same material.