IP Library Granted Patent US 12707649
Granted Patent B2
US 12707649 · App. 17/987,823 · Granted Aug 11, 2026

Stacked 3D cache configuration with on-chip power support

Inventors: Arvind Kumar (Chappaqua, NY); Todd Edward Takken (Brewster, NY); John W Golz (Hopewell Jct, NY); Joshua M. Rubin (Albany, NY)
Assignee: International Business Machines Corporation
H10B80/00H10W90/00H10W72/20H10W90/26H10W90/288H10W90/297H10W90/722
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Quick Facts
Patent No.
US 12707649
App. No.
17/987,823
Granted
Aug 11, 2026
Kind
B2
Abstract

A semiconductor module includes a first semiconductor die, which comprises (i) a power support structure and (ii) a first cache region; and a second semiconductor die, which is mounted on top of the first semiconductor die and comprises (i) a logic core, which overlies and is electrically connected to the power support structure, and (ii) a second cache region, which overlies and is electrically connected to the first cache region.

Claims (12)

1 . A semiconductor module comprising:

a first semiconductor die, which comprises (i) a power support structure and (ii) a first cache region; and

a second semiconductor die, which is mounted on top of the first semiconductor die and comprises (i) a logic core, which overlies and is electrically connected to the power support structure, and (ii) a second cache region, which overlies and is electrically connected to the first cache region.

2 . The semiconductor module of claim 1 , wherein the first semiconductor die embodies a first technology node and the second semiconductor die embodies a second technology node that is different than the first technology node.

3 . The semiconductor module of claim 1 , further comprising: a heat sink, which is mounted on top of the second semiconductor die.

4 . The semiconductor module of claim 1 , wherein the first cache region is adjacent to the power support structure and the second cache region is adjacent to the logic core.

5 . The semiconductor module of claim 1 , wherein the power support structure comprises a magnetic structure.

6 . The semiconductor module of claim 1 , wherein the power support structure comprises a linear regulator.

7 . The semiconductor module of claim 1 , wherein the power support structure comprises an inductor with a natural frequency of about 65 MHz to about 100 MHz.

8 . The semiconductor module of claim 1 , wherein the power support structure comprises a 100 MHz inductor in one or more back end of line layers.

9 . The semiconductor module of claim 1 , wherein the power support structure comprises a buck converter.

10 . The semiconductor module of claim 1 , wherein the first semiconductor die comprises an input/output structure that is electrically connected with the logic core in the second semiconductor die.