Transistor arrangement and method for producing a transistor with a fin structure

1 . A transistor arrangement, comprising:

a semiconductor substrate; and

an epitaxy layer applied onto the semiconductor substrate, with a first side facing the semiconductor substrate and a second side opposite the first side, wherein the epitaxy layer includes a region with a fin structure, and an edge region surrounding the region with the fin structure, and wherein a thickness between the first side and the second side of the epitaxy layer in the region with the fin structure is greater than a thickness between the first side and the second side of the epitaxy layer in the edge region;

wherein the epitaxy layer includes a first shield implant arranged below the region with the fin structure, wherein the epitaxy layer includes a further shield implant arranged in the edge region, and wherein a lower end of the further shield implant facing the first side of the epitaxy layer projects at least as deep into the epitaxy layer as a lower end of the first shield implant facing the first side of the epitaxy layer.

2 . The transistor arrangement according to claim 1 , wherein the thickness of the epitaxy layer in the region with the fin structure is greater, at least by a thickness of the fin structure, than the thickness of the epitaxy layer in the edge region.

3 . The transistor arrangement according to claim 1 , wherein the thickness of the epitaxy layer in the region with the fin structure is greater than the thickness of the epitaxy layer in the edge region by more than a thickness of the fin structure.

4 . The transistor arrangement according to claim 1 , wherein the first shield implant and the further shield implant project at least approximately equally far into the epitaxy layer.

5 . The transistor arrangement according to claim 1 , wherein the epitaxy layer further includes an edge implant which is more weakly doped than the further shield implant and is arranged in the edge region.

6 . A transistor arrangement, comprising:

a semiconductor substrate; and

an epitaxy layer applied onto the semiconductor substrate, with a first side facing the semiconductor substrate and a second side opposite the first side, wherein the epitaxy layer includes a region with a fin structure, and an edge region surrounding the region with the fin structure, and wherein a thickness between the first side and the second side of the epitaxy layer in the region with the fin structure is greater than a thickness between the first side and the second side of the epitaxy layer in the edge region;

wherein first electrical contacting is provided on the second side of the epitaxy layer in the region of the fin structure, and second electrical contacting, which is electrically connected to the first electrical contacting, is provided in the edge region.

7 . A power transistor, comprising:

a transistor arrangement including:

a semiconductor substrate; and

an epitaxy layer applied onto the semiconductor substrate, with a first side facing the semiconductor substrate and a second side opposite the first side, wherein the epitaxy layer includes a region with a fin structure, and an edge region surrounding the region with the fin structure, and wherein a thickness between the first side and the second side of the epitaxy layer in the region with the fin structure is greater than a thickness between the first side and the second side of the epitaxy layer in the edge region;

wherein the epitaxy layer includes a first shield implant arranged below the region with the fin structure, wherein the epitaxy layer includes a further shield implant arranged in the edge region, and wherein a lower end of the further shield implant facing the first side of the epitaxy layer projects at least as deep into the epitaxy layer as a lower end of the first shield implant facing the first side of the epitaxy layer.

8 . The power transistor of claim 7 , wherein the power transistor is a field-effect transistor (FET) or metal-oxide (MOS) transistor with a fin structure.

9 . A method for producing a transistor with a fin structure, comprising the following steps:

providing a semiconductor substrate including an epitaxy layer applied onto the semiconductor substrate, wherein the epitaxy layer has a first side facing the semiconductor substrate and a second side opposite the first side;

introducing a trench in an edge region surrounding a region for the fin structure of the transistor;

producing the fin structure in the epitaxy layer; and

producing first shield implants in a region of the epitaxy layer, for the fin structure of the transistor, and a further shield implant in the edge region of the epitaxy layer.