Semiconductor device, semiconductor module, and method for manufacturing semiconductor device
A semiconductor device according to an embodiment includes a first electrode having a first main surface and a second main surface opposite to the first main surface, a semiconductor substrate disposed on the second main surface, and a second electrode disposed on a fourth main surface of the semiconductor substrate opposite to a third main surface in contact with the first electrode. The first electrode has a first side surface substantially perpendicularly intersecting with the first main surface, and a second side surface substantially perpendicularly intersecting with both the first main surface and the first side surface, and the first main surface, the first side surface, and the second side surface are connected to each other via a curved surface.
1 . A semiconductor device comprising:
a first electrode that has a first main surface and a second main surface opposite to the first main surface;
a semiconductor substrate that is disposed on the second main surface; and
a second electrode that is disposed on a fourth main surface of the semiconductor substrate opposite to a third main surface in contact with the first electrode, wherein
the first electrode has a first side surface substantially perpendicularly intersecting with the first main surface, and a second side surface substantially perpendicularly intersecting with both the first main surface and the first side surface, and
the first main surface, the first side surface, and the second side surface are connected to each other via a curved surface.
2 . The semiconductor device according to claim 1 , wherein
the first electrode is rounded at all corners of the first main surface.
3 . The semiconductor device according to claim 1 , wherein
the first main surface and the first side surface are connected to each other via a curved surface.
4 . The semiconductor device according to claim 3 , wherein
the first electrode is rounded at all side portions of the first main surface.
5 . The semiconductor device according to claim 1 , wherein
a total of thicknesses of the first electrode, the semiconductor substrate, and the second electrode is equal to or less than 50 μm.
6 . The semiconductor device according to claim 1 , wherein
a radius of curvature of the curved surface is equal to or more than 10 μm.
7 . The semiconductor device according to claim 1 , wherein
the semiconductor device is a vertical MOSFET,
the first electrode is a drain electrode, and
the second electrode is a source electrode.
8 . A semiconductor module comprising:
the semiconductor device according to claim 1 ;
a first metal member that is electrically connected to the first electrode;
a second metal member that is electrically connected to the second electrode; and
a sealing material that seals the semiconductor device.
9 . The semiconductor device according to claim 1 , wherein
the semiconductor substrate has the third main surface, a third side surface substantially perpendicularly intersecting with the third main surface, and a fourth side surface substantially perpendicularly intersecting with both the third main surface and the third side surface, and
the third main surface, the third side surface, and the fourth side surface are connected to each other via a second curved surface.
10 . The semiconductor device according to claim 9 , wherein
the semiconductor substrate is rounded at all corners of the third main surface.
11 . The semiconductor device according to claim 9 , wherein
the third main surface and the third side surface are connected to each other via a curved surface.
12 . The semiconductor device according to claim 11 , wherein
the semiconductor substrate is rounded at all side portions of the third main surface.
13 . The semiconductor device according to claim 9 , wherein
a total of thicknesses of the first electrode, the semiconductor substrate, and the second electrode is equal to or less than 50 μm.
14 . The semiconductor device according to claim 9 , wherein
a radius of curvature of at least one of the curved surface and the second curved surface is equal to or more than 10 μm.
15 . The semiconductor device according to claim 9 , wherein
the semiconductor device is a vertical MOSFET,
the first electrode is a drain electrode, and
the second electrode is a source electrode.
16 . A semiconductor module comprising:
the semiconductor device according to claim 9 ;
a first metal member that is electrically connected to the first electrode;
a second metal member that is electrically connected to the second electrode; and
a sealing material that seals the semiconductor device.