Semiconductor device and method for manufacturing semiconductor device
According to one embodiment, a semiconductor device includes a silicon carbide member, a first member, a first layer, and a second layer. The silicon carbide member includes a first region. The first member includes silicon and oxygen. The first layer is provided between the first region and the first member. The first layer includes a bond between silicon and nitrogen. The second layer is provided between the first layer and the first member. The second layer includes a bond between silicon and oxygen and a bond between silicon and nitrogen.
1 . A semiconductor device, comprising:
a silicon carbide member including a first region;
a first member including silicon and oxygen;
a first layer provided between the first region and the first member, the first layer including a bond between silicon and nitrogen; and
a second layer provided between the first layer and the first member, the second layer including a bond between silicon and oxygen and a bond between silicon and nitrogen,
wherein
a first silicon located at a first boundary between the first layer and the second layer is bonded with a nitrogen included in the first layer and with a carbon included in the first layer,
the first silicon is bonded with a first oxygen included in the second layer,
the first oxygen is bonded with a second silicon included in the second layer,
the second silicon is bonded with a first nitrogen included in the second layer,
the first nitrogen is bonded with a third silicon located at a second boundary between the second layer and the first member,
the third silicon is bonded with an oxygen included in the first member,
the nitrogen included in the first layer is bonded with a silicon located at a third boundary between the silicon carbide member and the first layer, and
the carbon included in the first layer is bonded with another silicon located at the third boundary.
2 . The device according to claim 1 , wherein a first thickness of the first layer in a first direction from the first region to the first member is 0.5 nm or less.
3 . The device according to claim 2 , wherein the first thickness is 0.3 nm or less.
4 . The device according to claim 2 , wherein a second thickness of the second layer in the first direction is 1 nm or less.
5 . The device according to claim 4 , wherein the second thickness is 0.7 nm or less.
6 . The device according to claim 1 , wherein the first layer is a diatomic layer including the bond between silicon and nitrogen.
7 . The device according to claim 1 , wherein
an orientation from the first silicon to the second silicon includes a component of a first orientation from the first region to the first member, and
an orientation from the second silicon to the third silicon includes a component of the first orientation.
8 . The s device according to claim 1 , wherein
a first thickness of the first layer in a first direction from the first region to the first member is ½ or less of a second thickness of a second layer in the first direction.
9 . The device according to claim 1 , wherein
the first region does not include nitrogen or
a concentration of nitrogen included in the first region is less than 1/10 5 of a concentration of nitrogen included in the first layer.
10 . The device according to claim 9 , wherein the concentration of nitrogen included in the first region is 5×10 16 cm −3 or less.
11 . The semiconductor device according to claim 1 , wherein
the first member does not include nitrogen or
a concentration of nitrogen included in the first member is less than 1/10 2 of a concentration of nitrogen included in the first layer.
12 . The device according to claim 11 , wherein the concentration of nitrogen included in the first member is 5×10 19 cm −3 or less.
13 . The device according to claim 1 , further comprising: a first conductive member, the first member being provided between the first region and the first conductive member.
14 . The device according to claim 1 , further comprising: a first conductive member, a second conductive member and a third conductive member,
the first member being provided between the first region and the first conductive member,
the silicon carbide member further including a second region and a third region,
the first region being of the first conductive type,
the second region being of the second conductive type,
the third region being of the first conductive type,
at least a part of the second region being between the first region and the third region,
the second conductive member being electrically connected to the third region, and
the third conductive member being electrically connected to the first region.