Semiconductor device and method for manufacturing
A semiconductor device includes a first electrode, a plurality of unit element regions, and a partitioning region. Each of the unit element regions includes a first semiconductor part, a second electrode, and a first conductive part. The first semiconductor part includes first to third semiconductor regions. The first semiconductor region is located above the first electrode. The second semiconductor region is located on the first semiconductor region. The third semiconductor region is located on the second semiconductor region. The second electrode is located on the second and third semiconductor regions. The first conductive part faces the second semiconductor region via a first insulating film. At least a portion of the plurality of unit element regions includes a common pattern. The partitioning region includes a second semiconductor part and partitions the plurality of unit element regions. The second semiconductor part is continuous with the first semiconductor part.
1 . A semiconductor device, comprising:
a first electrode;
a plurality of unit element regions, each of the unit element regions including:
a first semiconductor part including:
a first semiconductor region located above the first electrode, the first semiconductor region being of a first conductivity type,
a second semiconductor region located on the first semiconductor region, the second semiconductor region being of a second conductivity type, and
a third semiconductor region located on the second semiconductor region, the third semiconductor region being of the first conductivity type,
a second electrode located on the second and third semiconductor regions and electrically connected with the second and third semiconductor regions, and
a first conductive part facing the second semiconductor region via a first insulating film; and
a partitioning region including a second semiconductor part and partitioning the plurality of unit element regions, the second semiconductor part being continuous with the first semiconductor part,
wherein:
at least a portion of the plurality of unit element regions include a common pattern,
the plurality of unit element regions include a first unit element region and a second unit element region;
the first unit element region includes:
a first wiring part located above the first semiconductor part and electrically connected with the first conductive part; and
a conductive region located above the first semiconductor part and electrically connected with the first wiring part,
the conductive region is wider than the first wiring part,
a conductive film includes the first wiring part and the conductive region and surrounds the second electrode,
the second unit element region includes the first wiring part, and
an area of the second electrode in the second unit element region is larger than an area of the second electrode in the first unit element region.
2 . The device according to claim 1 , wherein the plurality of unit element regions are periodically arranged.
3 . The device according to claim 1 , wherein the common pattern is at least one of a pattern of the first conductive part, a pattern of the second semiconductor region, or a pattern of the second electrode.
4 . The device according to claim 1 , wherein:
each of the plurality of unit element regions includes a plurality of first trenches provided in the first semiconductor part, the plurality of first trenches extending in an extension direction along a surface of the first semiconductor part,
a plurality of the first conductive parts are located in each of the plurality of unit element regions,
the plurality of first conductive parts are located inside the plurality of first trenches and electrically connected with the first wiring part,
a portion of the plurality of first trenches includes:
a first trench part located under the second electrode; and
a second trench part located under the conductive region, and
the conductive region extends in the extension direction from the first trench part.
5 . The device according to claim 4 , wherein;
in the first unit element region, the first semiconductor part includes a fourth semiconductor region located under the conductive region,
a second-conductivity-type impurity concentration in the fourth semiconductor region is greater than a second-conductivity-type impurity concentration in the second semiconductor region,
a portion of the plurality of first conductive parts of the first unit element region includes:
a first portion located in the first trench part; and
a second portion located in the second trench part, and
the second portion extends in the extension direction from the first portion.
6 . The device according to claim 4 , wherein:
a portion of the plurality of first conductive parts of the first unit element region includes:
a first portion located in the first trench part; and
a second portion located in the second trench part,
the second portion extends in the extension direction from the first portion,
the first unit element region includes a second insulating film located between the second portion and the first semiconductor region, and
a thickness of the second insulating film is greater than a thickness of the first insulating film.
7 . The device according to claim 4 , wherein;
the first unit element region includes a plurality of contact parts electrically connecting the plurality of first conductive parts of the first unit element region to the first wiring part and the conductive region of the first unit element region,
a second unit element region among the plurality of unit element regions includes a plurality of contact parts electrically connecting the plurality of first conductive parts of the second unit element region to the first wiring part of the second unit element region, and
a pattern of the plurality of contact parts of the first unit element region is common with a pattern of the plurality of contact parts of the second unit element region.
8 . The device according to claim 4 , wherein;
each of the plurality of unit element regions includes a plurality of second conductive parts located inside the plurality of first trenches,
the plurality of first conductive parts of the first unit element region are not located in the second trench part, and
a portion of the plurality of second conductive parts of the first unit element region includes:
a portion located in the first trench part; and
a portion located in the second trench part.
9 . The device according to claim 4 , wherein:
the second trench part includes a first end and a second end along the extending direction, the first end being located closer to the first trench part from among the first end and the second end, and
the conductive region is connected to the second end of the second trench part.
10 . The device according to claim 1 , wherein;
in at least two of the plurality of unit element regions, the common pattern is a pattern of the conductive region.
11 . The device according to claim 1 , wherein;
the second semiconductor part of the partitioning region includes:
a fifth semiconductor region located above the first electrode, the fifth semiconductor region being of the first conductivity type;
a sixth semiconductor region located on the fifth semiconductor region, the sixth semiconductor region being of the second conductivity type; and
a seventh semiconductor region located on the sixth semiconductor region, the seventh semiconductor region being of the first conductivity type, and
the partitioning region includes:
a second trench located in the second semiconductor part;
a third conductive part located inside the second trench, the third conductive part including a portion facing a side surface of the sixth semiconductor region via an insulating film; and
a third electrode located on the sixth and seventh semiconductor regions and electrically connected with the sixth and seventh semiconductor regions, the third electrode being continuous with the second electrode.
12 . The device according to claim 11 , wherein:
the partitioning region includes a second wiring part located above the second semiconductor part and electrically connected with the third conductive part, the second wiring part being continuous with the first wiring part, and
the first wiring part and the second wiring part are positioned at an outer perimeter portion of the plurality of unit element regions and the partitioning region.
13 . The device according to claim 1 , wherein:
the second semiconductor part of the partitioning region includes:
a fifth semiconductor region located above the first electrode, the fifth semiconductor region being of the first conductivity type; and
a sixth semiconductor region located on the fifth semiconductor region, the sixth semiconductor region being of the second conductivity type, and
the partitioning region includes a third electrode located on the sixth semiconductor region and electrically connected with the sixth semiconductor region, the third electrode being continuous with the second electrode.
14 . The device according to claim 1 , wherein:
the second semiconductor part of the partitioning region includes a fifth semiconductor region located above the first electrode, the fifth semiconductor region being of the first conductivity type, and
the partitioning region includes:
a third electrode located above the fifth semiconductor region and electrically connected with the fifth semiconductor region, the third electrode being continuous with the second electrode; and
a contact part forming a Schottky junction with the fifth semiconductor region, the contact part electrically connecting the fifth semiconductor region to the third electrode.
15 . The device according to claim 1 , wherein;
the second unit element region is apart from the first unit element region in a first direction parallel to the second electrode,
the partitioning region includes a portion of the conductive film above the second semiconductor part,
the portion of the conductive film extends in a second direction orthogonal to the first direction and parallel to the second electrode between the first and second unit element regions,
the portion of the conductive film is located between the first unit element region and the second unit element region along the first direction, and
a length of the portion of the conductive film along the second direction is longer than a length of the portion of the conductive film along the first direction.
16 . A semiconductor device, comprising:
a first electrode;
a first semiconductor part including:
a first semiconductor region located above the first electrode, the first semiconductor region being of a first conductivity type,
a second semiconductor region located on the first semiconductor region, the second semiconductor region being of a second conductivity type, and
a third semiconductor region located on the second semiconductor region, the third semiconductor region being of the first conductivity type;
a second electrode located on the second and third semiconductor regions and electrically connected with the second and third semiconductor regions;
a plurality of first trenches provided in the first semiconductor part, the plurality of first trenches extending in an extension direction along a surface of the first semiconductor part;
a first wiring part located above the first semiconductor part;
a plurality of first conductive parts located inside the plurality of first trenches and electrically connected with the first wiring part, each of the plurality of first conductive parts facing the second semiconductor region via a first insulating film; and
a conductive region located above the first semiconductor part and electrically connected with the first wiring part,
wherein:
the conductive region is wider than the first wiring part,
a portion of the plurality of first trenches include:
a first trench part located under the second electrode, and
a second trench part located under the conductive region,
the conductive region extends in the extension direction from the first trench part,
the first semiconductor part includes a fourth semiconductor region located under the conductive region,
a second-conductivity-type impurity concentration in the fourth semiconductor region is greater than a second-conductivity-type impurity concentration in the second semiconductor region,
a portion of the plurality of first conductive parts includes:
a first portion located in the first trench part; and
a second portion located in the second trench part,
the second trench part extends in the extension direction from the first portion,
a plurality of cell contact parts are provided in a portion of the second semiconductor region, the plurality of cell contact parts being of the second conductivity type, and each of the plurality of cell contact parts electrically connecting the second electrode with the second semiconductor region, and
the plurality of cell contact parts are provided below the second electrode in an area of the first unit element region, and are not provided below the conductive region.