Member for solid-state image pickup device and method for manufacturing solid-state image pickup device

1 . A method for manufacturing a device, comprising:

providing a first member which includes a first substrate having a first face and a second face, and a first structure on the first face of the first substrate;

providing a second member which includes a second substrate having a first face and a second face, and a second structure on the first face of the second substrate; and

bonding the first member and the second member so that the first structure and the second structure are disposed between the first face of the first substrate and the first face of the second substrate,

wherein the first structure includes a first insulating film having a groove, includes a first conductive portion in the groove of the first insulating film and includes a first film of barrier metal between the first conductive portion and the first insulating film,

wherein the second structure includes a second insulating film having a groove, includes a second conductive portion in the groove of the second insulating film and includes a second film of barrier metal between the second conductive portion and the second insulating film,

wherein before the bonding, a height of an upper face of the first insulating film from the first face of the first substrate is lower than a height of an upper face of the first conductive portion from the first face of the first substrate,

wherein, before the bonding, a height of an upper face of the second conductive portion from the first face of the second substrate is lower than a height of an upper face of the second insulating film from the first face of the second substrate, and

wherein in the bonding, the upper face of the first insulating film and the upper face of the second insulating film are bonded together, and at least a first part of the first conductive portion and at least a second part of the second conductive portion are bonded together.

2 . The method according to claim 1 ,

wherein the bonding includes a first step and a second step,

wherein in the first step, the upper face of the first insulating film and the upper face of the second insulating film are bonded together whereas at least the first part of the first conductive portion and at least the second part of the second conductive portion face each other without being in contact with the first part of the first conductive portion and the second part of the second conductive portion, and

wherein in the second step, the first part of the first conductive portion and the second part of the second conductive portion are bonded together.

3 . The method according to claim 1 ,

wherein in the bonding, a height of the upper face of the first conductive portion from the first face of the second substrate is lower than a height of the upper face of the second insulating film from the first face of the second face, and higher than a height of the upper face of the second conductive portion from the first face of the second substrate.

4 . The method according to claim 1 ,

wherein before the bonding, a first plasma irradiation is performed on the upper face of first conductive portion and the upper face of the first insulating film,

wherein before the bonding, a second plasma irradiation is performed on the upper face of second conductive portion and the upper face of the second insulating film.

5 . The method according to claim 4 ,

wherein the first plasma irradiation is performed in a gas atmosphere including nitrogen.

6 . The method according to claim 5 ,

wherein the second plasma irradiation is performed in a gas atmosphere including nitrogen.

7 . The method according to claim 1 ,

wherein before the bonding, a height of an upper face of the second film from the first face of the second substrate is lower than a height of the upper face of the second insulating film from the first face of the second substrate.

8 . The method according to claim 7 ,

wherein before the bonding, a height of an upper face of the first film from the first face of the first substrate is lower than a height of the upper face of the first conductive portion from the first face of the first substrate.

9 . The method according to claim 1 , wherein the first film contains tantalum and/or titanium, and the second film contains tantalum and/or titanium.

10 . The method according to claim 9 , wherein a material of the first conductive portion is copper, and a material of the second conductive portion is copper.

11 . The method according to claim 1 , wherein a material of the first conductive portion is copper, and a material of the second conductive portion is copper.

12 . The method according to claim 1 , wherein the first substrate includes a silicon semiconductor substrate, and the second substrate includes a silicon semiconductor substrate.

13 . The method according to claim 1 , wherein the second substrate is provided with a transistor.

14 . The method according to claim 1 , wherein for providing the first member with the first conductive portion, a CMP treatment is performed on the first structure, and wherein for providing the second member with the second conductive portion, a CMP treatment is performed on the second structure.

15 . The method according to claim 1 , wherein for providing the first member with the first conductive portion, a wet etching or a dry etching is performed on the first structure, and wherein for providing the second member with the second conductive portion, a wet etching or a dry etching is performed on the second structure.

16 . The method according to claim 1 , wherein the first substrate and the second substrate are electrically connected with each other via the first portion and the second portion.

17 . The method according to claim 1 , wherein after the bonding, a thickness of the first substrate is reduced.

18 . The method according to claim 17 , wherein after the bonding, a thickness of the second substrate is reduced.

19 . The method according to claim 17 , wherein the first substrate is provided with a photoelectric converter.

20 . The method according to claim 1 , wherein after the bonding, an opening is formed in the first substrate.

21 . The method according to claim 20 , wherein a pad is disposed in the opening.

22 . The method according to claim 1 , wherein the first substrate is provided with a photoelectric converter.

23 . A method for manufacturing a device, comprising:

providing a first member which includes a first substrate and a first structure on the first substrate;

providing a second member which includes a second substrate and a second structure on the second substrate; and

bonding the first member and the second member so that the first structure and the second structure are disposed between the first substrate and the second substrate,

wherein the first structure includes a first insulating film having a groove, includes a first conductive portion in the groove of the first insulating film and includes a first film of barrier metal between the first conductive portion and the first insulating film,

wherein the second structure includes a second insulating film having a groove, includes a second conductive portion in the groove of the second insulating film and includes a second film of barrier metal between the second conductive portion and the second insulating film,

wherein before the bonding, an upper face of the first conductive portion protrudes from an upper face of the first insulating film,

wherein, before the bonding, an upper face of the second conductive portion recedes from an upper face of the second insulating film, and

wherein in the bonding, the upper face of the first insulating film and the upper face of the second insulating film are bonded together, and at least a first part of the first conductive portion and at least a second part of the second conductive portion are bonded together.

24 . The method according to claim 23 ,

wherein the bonding includes a first step and a second step,

wherein in the first step, the upper face of the first insulating film and the upper face of the second insulating film are bonded together whereas at least the first part of the first conductive portion and at least the second part of the second conductive portion face each other without being in contact with the first part of the first conductive portion and the second part of the second conductive portion, and

wherein in the second step, the first part of the first conductive portion and the second part of the second conductive portion are bonded together.

25 . The method according to claim 23 ,

wherein in the bonding, a height of the upper face of the first conductive portion from the first face of the second substrate is lower than a height of the upper face of the second insulating film from the first face of the second face, and higher than a height of the upper face of the second conductive portion from the first face of the second substrate.

26 . The method according to claim 23 ,

wherein before the bonding, a first plasma irradiation is performed on the upper face of first conductive portion and the upper face of the first insulating film,

wherein before the bonding, a second plasma irradiation is performed on the upper face of second conductive portion and the upper face of the second insulating film.

27 . The method according to claim 26 ,

wherein the first plasma irradiation is performed in a gas atmosphere including nitrogen.

28 . The method according to claim 27 ,

wherein the second plasma irradiation is performed in a gas atmosphere including nitrogen.

29 . The method according to claim 23 ,

wherein before the bonding, an upper face of the second film recedes from the upper face of the second insulating film.

30 . The method according to claim 29 ,

Wherein, before the bonding, the upper face of the first conductive portion protrudes from an upper face of the first film.

31 . The method according to claim 23 , wherein the first film contains tantalum and/or titanium, and the second film contains tantalum and/or titanium.

32 . The method according to claim 31 , wherein a material of the first conductive portion is copper, and a material of the second conductive portion is copper.

33 . The method according to claim 23 , wherein a material of the first conductive portion is copper, and a material of the second conductive portion is copper.

34 . The method according to claim 23 , wherein the first substrate includes a silicon semiconductor substrate, and the second substrate includes a silicon semiconductor substrate.

35 . The method according to claim 23 , wherein the second substrate is provided with a transistor.

36 . The method according to claim 23 , wherein the first substrate and the second substrate are electrically connected with each other via the first portion and the second portion.

37 . The method according to claim 23 , wherein after the bonding, a thickness of the first substrate is reduced.

38 . The method according to claim 37 , wherein after the bonding, a thickness of the second substrate is reduced.

39 . The method according to claim 37 , wherein the first substrate is provided with a photoelectric converter.

40 . The method according to claim 23 , wherein after the bonding, an opening is formed in the first substrate.

41 . The method according to claim 40 , wherein a pad is disposed in the opening.

42 . The method according to claim 23 , wherein the first substrate is provided with a photoelectric converter.