Detector substrate and flat panel detector
The present disclosure provides a detector substrate and a flat panel detector, the detector substrate includes a substrate base and detector pixel units on the substrate base, each detector pixel unit includes: a driver circuit; a photoelectric conversion device disposed on a side, away from the substrate base, of the driver circuit, the photoelectric conversion device including at least two photoelectric conversion structures connected in series, a bottom electrode of a first photoelectric conversion structure being electrically connected with the driver circuit, and a top electrode of an n th photoelectric conversion structure being electrically connected with a bottom electrode of an (n+1) th photoelectric conversion structure, with n being greater than or equal to 1; and a bias voltage line on a side of the photoelectric conversion device away from the substrate base, the bias voltage line being electrically connected to a top electrode of a last photoelectric conversion structure.
1 . A detector substrate, comprising a substrate base and a plurality of detector pixel units disposed on the substrate base, wherein each of the detector pixel units comprises:
a driver circuit on the substrate base;
a photoelectric conversion device disposed on a side, away from the substrate base, of the driver circuit, the photoelectric conversion device comprising at least two photoelectric conversion structures sequentially connected in series, a bottom electrode of a first photoelectric conversion structure in the at least two photoelectric conversion structures being electrically connected with the driver circuit, and a top electrode of an n th photoelectric conversion structure in the at least two photoelectric conversion structures being electrically connected with a bottom electrode of an (n+1) th photoelectric conversion structure in the at least two photoelectric conversion structures, with n being greater than or equal to 1; and
a bias voltage line on a side of the photoelectric conversion device away from the substrate base, the bias voltage line being electrically connected to a top electrode of a last photoelectric conversion structure in the at least two photoelectric conversion structures.
2 . The detector substrate of claim 1 , wherein orthographic projections of the photoelectric conversion structures on the substrate base do not overlap each other.
3 . The detector substrate of claim 1 , wherein bottom electrodes of the photoelectric conversion structures are disposed in a same layer, and top electrodes of the photoelectric conversion structures are disposed in a same layer.
4 . The detector substrate of claim 1 , wherein an orthographic projection of the first photoelectric conversion structure on the substrate base covers an orthographic projection of the driver circuit on the substrate base.
5 . The detector substrate of claim 1 , further comprising:
a conductive connection part for connecting the photoelectric conversion structures in series,
wherein the conductive connection part is disposed in the same layer as the bias voltage line.
6 . The detector substrate of claim 5 , wherein a division line between any two adjacent photoelectric conversion structures intersects with the bias voltage line.
7 . The detector substrate of claim 6 , wherein the division line is parallel to a diagonal line of the detector pixel unit.
8 . The detector substrate of claim 6 , wherein the division line is perpendicular to the bias voltage line.
9 . The detector substrate of claim 5 , wherein a division line between any two adjacent photoelectric conversion structures is parallel to the bias voltage line.
10 . The detector substrate of claim 5 , wherein the photoelectric conversion device comprises a first photoelectric conversion structure and a second photoelectric conversion structure connected in series, a bottom electrode of the first photoelectric conversion structure is electrically connected to the driver circuit, a top electrode of the first photoelectric conversion structure is electrically connected to an end of the conductive connection part, another end of the conductive connection part is electrically connected to a bottom electrode of the second photoelectric conversion structure, and a top electrode of the second photoelectric conversion structure is electrically connected to the bias voltage line.
11 . The detector substrate of claim 10 , wherein an area of the first photoelectric conversion structure is less than or equal to an area of the second photoelectric conversion structure.
12 . The detector substrate of claim 11 , further comprising:
a first planarization layer between the photoelectric conversion device and the bias voltage line,
wherein the first planarization layer comprises a first part covering the top electrode of the first photoelectric conversion structure, a second part covering the top electrode of the second photoelectric conversion structure, and a third part filled in a gap between the first photoelectric conversion structure and the second photoelectric conversion structure,
a first end of the conductive connection part is electrically connected with the top electrode of the first photoelectric conversion structure through a first via penetrating through the first part, and a second end of the conductive connection part is electrically connected with the bottom electrode of the second photoelectric conversion structure through a second via penetrating through the third part, and
the bias voltage line is electrically connected to the top electrode of the second photoelectric conversion structure through a third via penetrating through the second part.
13 . The detector substrate of claim 12 , further comprising:
a passivation layer between the driver circuit and the photoelectric conversion device; and
a second planarization layer between the passivation layer and the photoelectric conversion device,
wherein the bottom electrode of the first photoelectric conversion structure is electrically connected with the driver circuit through a fourth via penetrating through the second planarization layer and the passivation layer.
14 . The detector substrate of claim 13 , wherein the first photoelectric conversion structure comprises a first avoidance portion, the first avoidance portion is close to the driver circuit, and the second via and the fourth via are disposed in a region where the first avoidance portion is disposed.
15 . The detector substrate of claim 14 , wherein an orthographic projection of the second via on the substrate base and an orthographic projection of the fourth via on the substrate base do not overlap with each other.
16 . The detector substrate of claim 15 , wherein the second via and the fourth via are arranged along a direction in which the bias voltage line extends, or the second via and the fourth via are arranged in a direction perpendicular to the direction in which the bias voltage line extends.
17 . The detector substrate of claim 16 , wherein the first via and the second via are arranged along the direction in which the bias voltage line extends, or the first via and the second via are arranged in a direction perpendicular to the direction in which the bias voltage line extends.
18 . The detector substrate of claim 13 , wherein the second photoelectric conversion structure comprises a second avoidance portion, the second avoidance portion is close to the driver circuit, and the second via and the fourth via are disposed in a region where the second avoidance portion is disposed.
19 . The detector substrate of claim 13 , wherein the first photoelectric conversion structure comprises a first avoidance portion, the second photoelectric conversion structure comprises a second avoidance portion, the first avoidance portion and the second avoidance portion are adjacent to each other to form an avoidance part, the avoidance part is disposed close to the driver circuit, and the second via and the fourth via are disposed in a region where the avoidance part is disposed.
20 . A flat panel detector, comprising the detector substrate of claim 1 .