Solid-state imaging device

1 . A solid-state imaging device comprising:

a semiconductor substrate having a main surface provided with a plurality of light sensitive regions; and

an insulating film provided on the main surface of the semiconductor substrate,

wherein a plurality of gently continuous uneven portions are formed on a surface on the side opposite to the main surface of the semiconductor substrate in the insulating film, and

wherein a height difference referring to a thickness difference between a bottom portion and a top portion of the uneven portions exists in the plurality of light sensitive regions, the uneven portions having a plurality of height differences within one of the plurality of light sensitive regions, the plurality of height differences including a first height difference and a second height difference, both present in a same direction, the first height difference being different from the second height difference.

2 . The solid-state imaging device according to claim 1 ,

wherein when the height difference of the uneven portion is measured at an interval of 0.01 μm in the light sensitive region, a maximum value of an appearance frequency of a surface height of the insulating film based on the highest top portion of the insulating film is 5% or less.

3 . The solid-state imaging device according to claim 1 ,

wherein when the height difference of the uneven portion is measured at an interval of 0.01 μm in the light sensitive region, a standard deviation of an appearance frequency of a surface height of the insulating film based on the highest top portion of the insulating film is 1% or less.

4 . The solid-state imaging device according to claim 1 ,

wherein the height difference between the highest top portion and the lowest bottom portion of the uneven portion in the light sensitive region is 0.5 μm or more and 0.9 μm or less.

5 . The solid-state imaging device according to claim 1 ,

wherein the main surface of the semiconductor substrate is a flat surface.