Passivated contact structure and solar cell comprising the same, cell assembly, and photovoltaic system
A solar cell includes a silicon substrate, a first doped region, and a second doped region. The first doped region includes a first passivated contact region on the silicon substrate and a second passivated contact region on the first passivated contact region. The first passivated contact region includes a first doped layer, a first passivation layer, and a second doped layer. The second passivated contact region includes a second passivation layer and a third doped layer. The second doped region includes a third passivation layer. Each of the first and third passivation layers includes a porous structure. One of the first and second doped regions is a P-type doped region, the other of the first and second doped regions is an N-type doped region, and a hole density of a corresponding passivation layer in the P-type doped region is greater than that in the N-type doped region.
1 . A solar cell, comprising:
a silicon substrate;
a first doped region and a second doped region, spaced apart on a back side of the silicon substrate and having opposite polarities;
a first conductive layer and a second conductive layer, respectively disposed in the first doped region and the second doped region;
wherein
the first doped region comprises a first doped layer, a first passivation layer, a second doped layer, a second passivation layer and a third doped layer disposed on the silicon substrate in sequence, and a through opening is provided on the second passivation layer and the third doped layer so that the first conductive layer connects to the second doped layer; and
the second doped region comprises a fourth doped layer, a third passivation layer, a fifth doped layer disposed on the silicon substrate in sequence.
2 . The solar cell according to claim 1 ,
wherein the first passivation layer is a porous structure comprising a hole region, the first doped layer and/or the second doped layer being disposed in the hole region, and/or
wherein the third passivation layer is a porous structure having a hole region, and/or
wherein a thickness of the second passivation layer is greater than a thickness of the third passivation layer, and/or
wherein the fourth doped layer is formed in the silicon substrate, and/or
wherein the first doped layer is doped with a group-III element and the fourth doped layer is doped with a group-V element, the fourth doped layer preferably being a monocrystalline silicon doped layer.
3 . The solar cell according to claim 1 , wherein grooves spaced apart are provided on the back side of the silicon substrate, and the first doped region and the second doped region are alternately disposed in the grooves.
4 . The solar cell according to claim 1 , wherein grooves spaced apart are provided on the back side of the silicon substrate; one of the first doped region and the second doped region is disposed in one of the grooves, and the other of the first doped region and the second doped region is disposed outside the grooves.
5 . The solar cell according to claim 2 , wherein a trench is provided between the first doped region and the second doped region.
6 . The solar cell according to claim 4 , wherein the first doped region and the second doped region are disposed in a part of regions inside and outside the grooves.
7 . The solar cell according to claim 1 , wherein the first dielectric layer and the second dielectric layer each are an aluminum oxide layer, a silicon nitride layer, a silicon oxynitride layer, a silicon carbide layer, an amorphous silicon layer, a silicon oxide layer, or a combination thereof.
8 . The solar cell according to claim 7 , wherein the first dielectric layer and/or the second dielectric layer comprise(s) the aluminum oxide layer and the silicon carbide layer, or the silicon oxide layer and silicon carbide layer; and a thickness of the first dielectric layer is greater than 50 nm, and a thickness of the second dielectric layer is greater than 25 nm.
9 . The solar cell according to claim 8 , wherein a thickness of the aluminum oxide layer or the silicon oxide layer in the first dielectric layer is less than 40 nm, a thickness of the aluminum oxide layer or the silicon oxide layer in the second dielectric layer is less than 25 nm, and a thickness of the silicon carbide layer in the first dielectric layer and/or in the second dielectric layer is greater than 10 nm.
10 . The solar cell according to claim 7 , wherein the silicon carbide layer in the first dielectric layer and/or in the second dielectric layer comprises at least one silicon carbide film; and refractive indexes of the at least one silicon carbide films decrease from the silicon substrate toward outside.
11 . The solar cell according to claim 7 , wherein a magnesium fluoride layer is disposed outside the first dielectric layer and/or the second dielectric layer.
12 . The solar cell according to claim 1 , wherein the first conductive layer and the second conductive layer are transparent conductive oxide layer (TCO) transparent conductive films and/or metal electrodes.
13 . The solar cell according to claim 12 , wherein the metal electrodes each comprises a silver electrode, a copper electrode, an aluminum electrode, a tin-coated copper electrode, or a silver-coated copper electrode.
14 . The solar cell according to claim 1 , wherein an electric field layer or a floating junction is disposed between the front side of the silicon substrate and the second dielectric layer.
15 . The solar cell according to claim 1 , wherein a hole density of the first passivation layer is greater than a hole density of the third passivation layer.
16 . A cell assembly, comprising the solar cell according to claim 1 .
17 . A photovoltaic system, comprising the cell assembly according to claim 16 .