Light emitting element and display device including the same

1 . A light emitting element, comprising:

a first semiconductor layer;

a second semiconductor layer on the first semiconductor layer; and

an element active layer between the first semiconductor layer and the second semiconductor layer,

wherein the first semiconductor layer, the element active layer, and the second semiconductor layer are sequentially located along a first direction,

a thickness of the first semiconductor layer in the first direction is greater than a thickness of the second semiconductor layer in the first direction, and

a cross section of the element active layer taken along the first direction comprises:

a first side facing the first semiconductor layer;

a second side facing the second semiconductor layer;

a first lateral side connecting one end of the first side to one end of the second side; and

a second lateral side connecting an other end of the first side to an other end of the second side,

wherein a length of the second side is greater than a length of the first side,

wherein an exterior angle between the first side and the first lateral side is in a range of 55° to 75°,

wherein a first cross sectional size of the first semiconductor layer is substantially uniform along the first direction and a second cross sectional size of the second semiconductor layer is substantially uniform along the first direction, and

wherein a width of the first semiconductor layer in a second direction crossing the first direction is smaller than a width of the second semiconductor layer in the second direction.

2 . The light emitting element of claim 1 , wherein an exterior angle between the first side and the second lateral side is in a range of 55° to 75°.

3 . The light emitting element of claim 2 , wherein the exterior angle between the first side and the first lateral side is in a range of 60° to 73°, and

wherein the exterior angle between the first side and the second lateral side is in a range of 60° to 73°.

4 . The light emitting element of claim 2 , wherein the exterior angle between the first side and the first lateral side and the exterior angle between the first side and the second lateral side are the same.

5 . The light emitting element of claim 1 , wherein each of the first lateral side and the second lateral side is inclined with respect to the first side, and

wherein a direction in which the first lateral side is inclined and a direction in which the second lateral side is inclined are opposite to each other.

6 . The light emitting element of claim 1 , wherein the cross section of the element active layer is asymmetrical with respect to a reference line extending in the first direction passing through a central portion of the element active layer.

7 . The light emitting element of claim 6 , wherein the first side and the second lateral side are perpendicular to each other.

8 . The light emitting element of claim 1 , wherein the thickness of the first semiconductor layer in the first direction is greater than a thickness of the element active layer in the first direction.

9 . The light emitting element of claim 8 , wherein the thickness of the first semiconductor layer in the first direction is greater than a sum of the thickness of the element active layer in the first direction and the thickness of the second semiconductor layer in the first direction.

10 . A display device comprising:

a first electrode and a second electrode on a substrate and spaced from each other; and

a light emitting element between the first electrode and the second electrode and extending in a first direction,

wherein the light emitting element comprises:

a first semiconductor layer;

a second semiconductor layer on the first semiconductor layer; and

an element active layer between the first semiconductor layer and the second semiconductor layer,

wherein the first semiconductor layer, the element active layer, and the second semiconductor layer are sequentially located along the first direction,

wherein a thickness of the first semiconductor layer in the first direction is greater than a thickness of the second semiconductor layer in the first direction, and

wherein a cross section of the element active layer taken along the first direction comprises:

a first side facing the first semiconductor layer;

a second side facing the second semiconductor layer;

a first lateral side connecting one end of the first side to one end of the second side; and

a second lateral side connecting an other end of the first side to an other end of the second side,

wherein a length of the second side is greater than a length of the first side,

wherein an exterior angle between the first side and the first lateral side or the second lateral side is in a range of 55° to 75°,

wherein a first cross sectional size of the first semiconductor layer is substantially uniform along the first direction and a second cross sectional size of the second semiconductor layer is substantially uniform along the first direction, and

wherein a width of the first semiconductor layer in a second direction crossing the first direction is smaller than a width of the second semiconductor layer in the second direction.

11 . The display device of claim 10 , wherein each of the first lateral side and the second lateral side is inclined with respect to the first side, and

wherein a direction in which the first lateral side is inclined and a direction in which the second lateral side is inclined are opposite to each other.

12 . The display device of claim 10 , wherein the cross section of the element active layer is asymmetrical with respect to a reference line extending in the first direction passing through a central portion of the element active layer.

13 . The display device of claim 12 , wherein the first side and the second lateral side are perpendicular to each other.