Semiconductor light-emitting element
A semiconductor light-emitting element includes a semiconductor structure including an n-side semiconductor layer including a first region, a second region located on an outer periphery of the first region, and a plurality of third regions surrounded by the first region in a plan view, a light-emitting layer disposed on the first region, and a p-side semiconductor layer disposed on the light-emitting layer; a first insulating film disposed on the semiconductor structure and defining a plurality of first openings, each located above a corresponding one of the plurality of third regions and a plurality of second openings located above the p-side semiconductor layer; an n-side electrode disposed on the first insulating film and electrically connected to the n-side semiconductor layer through the plurality of first openings; at least one n-pad electrode disposed in the second region and electrically connected to the n-side electrode; a second insulating film disposed on the first insulating film and defining a plurality of third openings, each located at a position overlapping a corresponding one of the plurality of second openings; and a p-pad electrode disposed on the second insulating film and electrically connected to the p-side semiconductor layer through the plurality of third openings. The p-pad electrode covers the first region and the plurality of third regions in a plan view. Two or more of the plurality of first openings are located around a corresponding one of the plurality of third openings in a plan view.
1 . A semiconductor light-emitting element comprising:
a semiconductor structure comprising:
an n-side semiconductor layer comprising a first region, a second region located on an outer periphery of the first region in a plan view, and a plurality of third regions surrounded by the first region in a plan view,
a light-emitting layer disposed on the first region, and
a p-side semiconductor layer disposed on the light-emitting layer;
a first insulating film disposed on the semiconductor structure and defining a plurality of first openings, each located above a corresponding one of the plurality of third regions, and a plurality of second openings located above the p-side semiconductor layer;
an n-side electrode disposed on the first insulating film and electrically connected to the n-side semiconductor layer through the plurality of first openings;
at least one n-pad electrode disposed in the second region outward of the light-emitting layer and the p-side semiconductor layer in a plan view, the at least one n-pad electrode being electrically connected to the n-side electrode;
a second insulating film disposed on the first insulating film and defining a plurality of third openings, each located at a position overlapping a corresponding one of the plurality of second openings; and
a p-pad electrode disposed on the second insulating film and electrically connected to the p-side semiconductor layer through the plurality of third openings, wherein:
the p-pad electrode covers the first region and the plurality of third regions in a plan view,
two or more of the plurality of first openings are located around a corresponding one of the plurality of third openings in a plan view,
the n-side electrode comprises an n-side outer-peripheral conductive portion in contact with the n-side semiconductor layer in the second region not overlapping the n-pad electrode in a plan view,
the n-side outer-peripheral conductive portion is disposed outward of an outer edge of the p-pad electrode in a plan view, and
the second insulating film defines a fifth opening located between a first opening of the plurality of first openings that is located closest to the n-side outer-peripheral conductive portion and the n-side outer-peripheral conductive portion in a plan view.
2 . The semiconductor light-emitting element according to claim 1 , wherein the plurality of first openings and the plurality of third openings are arranged in alternate rows in a plan view.
3 . The semiconductor light-emitting element according to claim 1 , wherein the light-emitting layer comprises an AlGaN layer having an Al composition ratio in a range of 40% to 60%.
4 . The semiconductor light-emitting element according to claim 1 , wherein a plurality of the n-pad electrodes are disposed outward of an outer edge of the p-pad electrode in a plan view.
5 . The semiconductor light-emitting element according to claim 1 , wherein:
the semiconductor structure has a rectangular shape in a plan view, and
the n-pad electrode is disposed in the second region located at a corner portion of the semiconductor structure of the second region.
6 . The semiconductor light-emitting element according to claim 1 , wherein the p-pad electrode has an octagonal shape in a plan view.
7 . The semiconductor light-emitting element according to claim 1 , wherein an area of the p-pad electrode is larger than an area of the light-emitting layer in a plan view.
8 . The semiconductor light-emitting element according to claim 1 , wherein a bonding member is disposed on the p-pad electrode above the plurality of third openings.
9 . The semiconductor light-emitting element according to claim 1 , wherein:
the n-side electrode comprises a plurality of n-side conductive portions and an n-side wiring portion,
each of the plurality of n-side conductive portions is in contact with the n-side semiconductor layer through a corresponding one of the plurality of first openings, and
the n-side wiring portion electrically connects each of the plurality of n-side conductive portions and the n-pad electrode.
10 . The semiconductor light-emitting element according to claim 1 , wherein the second insulating film defines a fourth opening located between one of the plurality of first openings that is located closest to the n-pad electrode and the n-pad electrode in a plan view.
11 . The semiconductor light-emitting element according to claim 1 , wherein:
the first insulating film defines a sixth opening having an area larger than an area of one of the plurality of first openings in a plan view,
the sixth opening has an elliptical shape in a plan view, and
the fifth opening is located between the sixth opening and the n-side outer-peripheral conductive portion in a plan view.
12 . The semiconductor light-emitting element according to claim 1 , wherein:
an area of the fifth opening is larger than an area of one of the plurality of third openings in a plan view, and
the fifth opening has an elliptical shape in a plan view.