Display device using semiconductor light-emitting elements

1 . A display device having a red semiconductor light-emitting element, a green semiconductor light-emitting element, and a blue semiconductor light-emitting element, the display device comprising:

a substrate on which the red, green and blue semiconductor light-emitting elements are disposed; and

receiving holes formed in the substrate such that the red, green, and blue semiconductor light-emitting elements are seated therein,

wherein each of the red, green, and blue semiconductor light-emitting elements includes a tip on a side surface thereof,

wherein the red, green, and blue semiconductor light-emitting elements differ from one another with respect to a tip angle defined by the tip of each respective semiconductor light-emitting element,

wherein the tip angle of the red semiconductor light-emitting element is smaller than the tip angle of the green semiconductor light-emitting element and the tip angle of the blue semiconductor light-emitting element, and

wherein a difference between the tip angles of the red, green, and blue semiconductor light-emitting elements is at least 10 degrees.

2 . The display device of claim 1 , wherein each of the red, green and blue semiconductor light-emitting elements is formed such that a cross section thereof including the tip is circular.

3 . The display device of claim 1 , wherein each of the red, green and blue semiconductor light-emitting elements comprises:

a first conductive electrode;

a first conductive semiconductor layer on which the first conductive electrode is disposed;

an active layer formed on the first conductive semiconductor layer;

a second conductive semiconductor layer formed on the active layer; and

a second conductive electrode disposed on the second conductive semiconductor layer to be spaced apart from the first conductive electrode in a horizontal direction, and

the tip is formed on the active layer,

wherein the red semiconductor light-emitting element includes an AlInP layer disposed on a lowest portion of the first conductive semiconductor layer,

wherein the first and second semiconductor layers of the green and blue semiconductor light-emitting elements are grown using gallium nitride (GaN),

wherein the red semiconductor light-emitting element is formed such that the tip angle is 140 degrees or less such that an etching angle of the AlInP layer is less than 70 degrees, and

wherein the green and blue semiconductor light-emitting elements are formed such that the tip angles are 150 degrees or more.

4 . The display device of claim 3 , wherein each of the red, green, and blue semiconductor light-emitting elements includes the first conductive electrode and the first conductive semiconductor layer disposed on one side thereof and the second conductive semiconductor layer and the second conductive electrode disposed on another side, with respect to the tip.

5 . The display device of claim 4 , wherein each of the red, green, and blue semiconductor light-emitting elements is configured such that the one side, with respect to the tip, including the first conductive electrode and the first conductive semiconductor layer has a different thickness.

6 . The display device of claim 5 , wherein the red semiconductor light-emitting element, among the red, green and blue semiconductor light-emitting elements, is configured such that the one side thereof has a thinnest thickness.

7 . The display device of claim 5 , wherein the red, green and blue semiconductor light-emitting elements have a thickness difference of at least 0.5 μm or more on the one side.

8 . The display device of claim 1 , wherein the receiving holes in which the red, green, and blue semiconductor light-emitting elements are seated are formed differently in view of at least one of a depth and an inclination of an inner surface thereof to correspond to the red, green, and blue semiconductor light-emitting elements.