Display device and manufacturing method thereof

1 . A display device comprising:

a thin-film transistor on a substrate, the thin-film transistor including an active layer, a gate electrode, a source electrode, and a drain electrode;

a light emitting diode (LED) on the thin-film transistor, the LED including a P-type electrode, an N-type electrode, and a light emitting layer, and the LED electrically connected to the thin-film transistor;

a first color conversion layer surrounding an upper surface and a first lateral surface of the LED and a second lateral surface of the LED opposite the first lateral surface of the LED, the first color conversion layer configured to convert light of a first color emitted from the LED into light of a second color; and

a color conversion substrate including a second color conversion layer at a position corresponding to the first color conversion layer.

2 . The display device of claim 1 , wherein the color conversion substrate includes:

a transparent film at an upper portion of the second color conversion layer, and

an adhesive layer at a lower portion of the second color conversion layer.

3 . The display device of claim 1 , wherein the LED is a blue LED emitting blue light, and

the first color conversion layer and the second color conversion layer convert the blue light emitted from the LED into red light or green light.

4 . The display device of claim 1 , wherein at least one of the first color conversion layer and the second color conversion layer includes a nano fluorescent body comprising an inorganic material, and

the nano fluorescent body absorbs light of a specific wavelength emitted from the LED and emits light of another wavelength.

5 . The display device of claim 4 , wherein the nano fluorescent body comprises an activator configured to perform a light emitting function and a host material accommodating the activator,

wherein the activator is at least one of europium (Eu), manganese (Mn), cerium (Ce), terbium (Tb), erbium (Er), strontium (Sr), and scandium (Sc),

wherein the host material is at least one of a potassium (K) compound, a strontium (Sr) compound, a calcium (Ca) compound, a silicon (Si) compound, and a gallium (Ga) compound, and

a size of the nano fluorescent body is in a range of 100 nm to 1.5 μm.

6 . The display device of claim 4 , wherein a sum of a thickness of the first color conversion layer located at an upper portion of the light emitting layer of the LED and a thickness of the second color conversion layer is in a range of 15 μm to 30 μm.

7 . The display device of claim 4 , wherein the nano fluorescent body made of the inorganic material included in at least one of the first color conversion layer and the second color conversion layer is distributed in an acryl based or epoxy based photosensitive material, and

a concentration of the nano fluorescent body included in the first color conversion layer and the second color conversion layer is 30 wt % to 35 wt %.

8 . The display device of claim 4 , wherein the nano fluorescent body made of the inorganic material included in the first color conversion layer is distributed in an acryl based or epoxy based photosensitive material, and

a concentration of the nano fluorescent body of the first color conversion layer is 30 wt % or less.

9 . The display device of claim 4 , wherein the nano fluorescent body made of the inorganic material included in the second color conversion layer is distributed in an acryl based or epoxy based photosensitive material, and

a concentration of the nano fluorescent body of the second color conversion layer is 45 wt % or less.

10 . The display device of claim 1 , wherein at least one of the first color conversion layer and the second color conversion layer is a color filter including a pigment or a dye made of a carbon compound.

11 . The display device of claim 1 , wherein the second color conversion layer includes a color filter layer made of a carbon compound and a nano fluorescent body layer made of an inorganic material.

12 . The display device of claim 1 , wherein the color conversion substrate includes a plurality of second color conversion layers, and a black matrix and a transparent layer are disposed between the plurality of second color conversion layers.

13 . The display device of claim 1 , further comprising:

a planarization layer in an area other than an area where the first color conversion layer and the LED are located; and

a first black matrix on the planarization layer.

14 . The display device of claim 13 , further comprising:

a connection wire electrically connecting the thin-film transistor and the LED through a contact hole formed by partially removing the planarization layer,

wherein the connection wire is located between the first color conversion layer and the planarization layer, and located at a lower portion of the first black matrix.

15 . The display device of claim 13 , wherein the first black matrix is disposed between a side surface of the LED and a side surface of an adjacent LED.

16 . A manufacturing method of a display device, comprising:

forming a thin-film transistor including an active layer, a gate electrode, a source electrode, and a drain electrode on a substrate;

transferring a light emitting diode (LED) including a P-type electrode, an N-type electrode, and a light emitting layer onto the thin-film transistor;

covering an upper surface, a first lateral surface, and a second lateral surface of the LED with a first color conversion layer, the second lateral surface of the LED being opposite the first lateral surface of the LED;

forming a planarization layer on a lateral surface of the first color conversion layer;

connecting the source electrode or the drain electrode of the thin-film transistor and the P-type electrode of the LED by a connection wire;

forming a first black matrix on the connection wire; and

attaching a color conversion substrate onto the first black matrix and the first color conversion layer.

17 . The manufacturing method of a display device of claim 16 , wherein covering the LED with the first color conversion layer comprises covering the LED with an acryl based dry film including a nano fluorescent body or applying and curing an acryl based solution including the nano fluorescent body.

18 . The manufacturing method of a display device of claim 16 , wherein forming the first black matrix comprises:

forming a black matrix material between a side surface of the LED and a side surface of an adjacent LED, on the first color conversion layer, the planarization layer, and the connection wire, and

removing the black matrix material on the first color conversion layer.

19 . A manufacturing method of a display device, comprising:

forming a thin-film transistor including an active layer, a gate electrode, a source electrode, and a drain electrode on a substrate;

transferring a light emitting diode (LED) including a P-type electrode, an N-type electrode, and a light emitting layer onto the thin-film transistor;

covering the LED with a first color conversion layer;

forming a planarization layer on a lateral surface of the first color conversion layer;

connecting the source electrode or the drain electrode of the thin-film transistor and the P-type electrode of the LED by a connection wire;

forming a first black matrix on the connection wire;

manufacturing a color conversion substrate; and

attaching a color conversion substrate onto the first black matrix and the first color conversion layer,

wherein manufacturing of the color conversion substrate comprises:

laminating a black matrix film on a transparent film,

forming a second black matrix by patterning the laminated black matrix film,

forming a second color conversion layer by printing ink including a nano fluorescent body in a space between parts of the patterned second black matrix, and

laminating an adhesive layer on the second black matrix and the second color conversion layer.