IP Library Granted Patent US 12707777
Granted Patent B2
US 12707777 · App. 18/261,958 · Granted Aug 11, 2026

Light-emitting substrate having first optical bodies and method of manufacturing the same, display panel

Inventors: Can Zhang (Beijing, CN); Can Wang (Beijing, CN); Minghua Xuan (Beijing, CN); Xiaochuan Chen (Beijing, CN); Ning Cong (Beijing, CN); Jinfei Niu (Beijing, CN); Jingjing Zhang (Beijing, CN)
Assignee: BOE TECHNOLOGY GROUP CO., LTD.
H10H20/855H10H20/01H10H20/811H10H20/852H10H20/857H10W90/00H10H20/032H10H20/0363
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Quick Facts
Patent No.
US 12707777
App. No.
18/261,958
Granted
Aug 11, 2026
Kind
B2
Abstract

The present disclosure provides a light-emitting substrate. The light-emitting substrate includes a backboard, a light-emitting layer and a plurality of first optical bodies. The light-emitting layer is located on a side of the backboard; the light-emitting layer includes a plurality of light-emitting units, and the plurality of light-emitting units are arranged in an array. Each first optical body includes a first optical portion and a second optical portion; a gap between two adjacent light-emitting units is filled with the first optical portion, and the second optical portion is located on a side of the light-emitting layer away from the backboard, and is connected to the first optical portion. The second optical portion includes a first surface extending outwards from an edge of the first optical portion.

Claims (54)

1 . A light-emitting substrate, comprising:

a backboard;

a light-emitting layer located on a side of the backboard; wherein the light-emitting layer includes a plurality of light-emitting units, and the plurality of light-emitting units are arranged in an array; and

a plurality of first optical bodies; wherein each first optical body includes a first optical portion and a second optical portion; a gap between two adjacent light-emitting units is filled with the first optical portion, and the second optical portion is located on a side of the light-emitting layer away from the backboard, and is connected to the first optical portion; the second optical portion includes a first surface extending outwards from an edge of the first optical portion; and

the light-emitting substrate further comprising:

a control electrode layer including a plurality of control electrodes; wherein the plurality of control electrodes are respectively coupled to the plurality of light-emitting units; wherein the control electrode layer is at least partially located in the backboard; or

the light-emitting substrate further comprising:

a control electrode layer including a plurality of control electrodes; wherein the plurality of control electrodes are respectively coupled to the plurality of light-emitting units; wherein the control electrode layer is at least partially located in the backboard; and

a bonding conductive layer located between the light-emitting layer and the backboard; wherein the bonding conductive layer includes a plurality of bonding conductive portions, and a bonding conductive portion is coupled to a control electrode and a light-emitting unit.

2 . The light-emitting substrate according to claim 1 , wherein an orthographic projection of the first surface on the backboard is located within an orthographic projection of a light-emitting unit of the two adjacent light-emitting units on the backboard.

3 . The light-emitting substrate according to claim 1 , wherein orthographic projections, on the backboard, of first surfaces of at least two first optical bodies are located within an orthographic projection of a same light-emitting unit on the backboard.

4 . The light-emitting substrate according to claim 1 , wherein

a slope angle of the first surface relative to the backboard is in a range of 40° to 80°.

5 . The light-emitting substrate according to claim 1 , further comprising:

a common electrode layer located on the side of the light-emitting layer away from the backboard; wherein the common electrode layer covers the plurality of light-emitting units and the plurality of first optical bodies.

6 . The light-emitting substrate according to claim 5 , further comprising:

a plurality of second optical bodies; wherein the plurality of second optical bodies are located on a surface of the common electrode layer away from the backboard.

7 . The light-emitting substrate according to claim 6 , wherein an area of a surface, proximate to the backboard, of the second optical body is greater than an area of a surface, away from the backboard, of the second optical body.

8 . The light-emitting substrate according to claim 6 , wherein the plurality of light-emitting units are arranged in a plurality of rows and a plurality of columns; wherein

in a direction parallel to an arrangement direction of a row of light-emitting units, first optical bodies and second optical bodies are alternately arranged; and/or

in a direction parallel to an arrangement direction of a column of light-emitting units, first optical bodies and second optical bodies are alternately arranged.

9 . The light-emitting substrate according to claim 6 , wherein a surface of the second optical body away from the backboard and a portion of the surface of the common electrode layer away from the backboard constitute a continuous surface.

10 . The light-emitting substrate according to claim 6 , wherein a refractive index of a second optical body is greater than a refractive index of a first optical body, a refractive index of the common electrode layer is greater than the refractive index of the first optical body, and the refractive index of the second optical body is greater than the refractive index of the common electrode layer; and

an orthographic projection of the second optical body on the backboard is located within an orthographic projection of a light-emitting unit on the backboard.

11 . The light-emitting substrate according to claim 1 , wherein a light-emitting unit includes:

a first semiconductor layer, a multi-quantum-well layer and a second semiconductor layer that are sequentially stacked in a direction away from the backboard; wherein

the first semiconductor layer includes a P-type doped material, and the second semiconductor layer includes an N-type doped material.

12 . The light-emitting substrate according to claim 11 , wherein the light-emitting substrate further comprises second optical bodies and a common electrode layer; wherein

a refractive index of the common electrode layer, a refractive index of a first optical body and a refractive index of a second optical body are all less than a refractive index of the second semiconductor layer.

13 . The light-emitting substrate according to claim 1 , further comprising:

an adhesive layer located on a side of the first optical bodies away from the backboard; and

a cover plate located on a side of the adhesive layer away from the backboard and covering the light-emitting layer and the first optical bodies.

14 . A display panel, comprising the light-emitting substrate according to claim 1 .

15 . A method of manufacturing a light-emitting substrate, comprising:

forming a light-emitting layer on a backboard; wherein the light-emitting layer includes a plurality of light-emitting units that are arranged at intervals; and

forming a plurality of first optical bodies; wherein each first optical body includes a first optical portion and a second optical portion; a gap between two adjacent light-emitting units is filled with the first optical portion, and the second optical portion is located on a side of the light-emitting layer away from the backboard, and is connected to the first optical portion; the second optical portion includes a first surface extending outwards from an edge of the first optical portion; and

before the light-emitting layer is formed on the backboard, the method further comprising: forming a control electrode layer on a backboard, wherein the control electrode layer includes a plurality of control electrodes, the plurality of control electrodes are respectively coupled to the plurality of light-emitting units, and the control electrode layer is at least partially located in the backboard;

or,

before the light-emitting layer is formed on the backboard, the method further comprising: forming a control electrode layer on a backboard, wherein the control electrode layer includes a plurality of control electrodes, the plurality of control electrodes are respectively coupled to the plurality of light-emitting units, and the control electrode layer is at least partially located in the backboard; and before the light-emitting layer is formed on the backboard, the method further comprising:

providing a silicon substrate;

forming a second semiconductor mother layer, a multi-quantum-well mother layer and a first semiconductor mother layer sequentially on the silicon substrate;

bonding the first semiconductor mother layer to the backboard by a bonding conductive mother layer, wherein the bonding conductive mother layer is located between the first semiconductor mother layer and the backboard; and

removing the silicon substrate, wherein

forming the light-emitting layer on the backboard includes:

patterning the second semiconductor mother layer, the multi-quantum-well mother layer and the first semiconductor mother layer to form the plurality of light-emitting units that are arranged at intervals; and

patterning the bonding conductive mother layer to form a bonding conductive layer, wherein the bonding conductive layer includes a plurality of bonding conductive portions that are arranged at intervals, and a bonding conductive portion is coupled to a control electrode and a light-emitting unit.

16 . The light-emitting substrate according to claim 4 , wherein the first surface is a plane.

17 . The light-emitting substrate according to claim 6 , wherein the plurality of first optical bodies are each in direct contact with the common electrode layer; and

the plurality of second optical bodies are each in direct contact with the common electrode layer.

18 . The light-emitting substrate according to claim 11 , wherein in a case where the light-emitting substrate further comprises the control electrode layer and the bonding conductive layer,

the control electrode layer is entirely located in the backboard, and a surface of the control electrode toward the light-emitting layer is flush with a surface of the backboard toward the light-emitting layer; and

each first optical body is in direct contact with the two adjacent light-emitting units, the bonding conductive layer and the backboard.

19 . The light-emitting substrate according to claim 1 , wherein the backboard is a silicon substrate.

20 . The light-emitting substrate according to claim 1 , wherein the control electrode layer is entirely located in the backboard, and a surface of the control electrode toward the light-emitting layer is flush with a surface of the backboard toward the light-emitting layer.