Optoelectronic semiconductor component comprising a plurality of metallic lead frame parts and panel

1 . An optoelectronic semiconductor device comprising:

a carrier;

an optoelectronic semiconductor chip configured to generate radiation and attached to a mounting side of the carrier; and

an encapsulation body at least partially transparent to the radiation,

wherein the carrier is composed of a plurality of separate, metallic lead frame parts and of a potting body, the potting body holding the plurality of separate, metallic lead frame parts together,

wherein the plurality of separate, metallic lead frame parts project beyond the potting body at the mounting side,

wherein an attachment side of the carrier is opposite the mounting side so that the mounting side is further away from the attachment side than sides of the potting body facing away from the attachment side,

wherein the attachment side is configured for surface mounting,

wherein, as seen in a plan view of the attachment side, the potting body projects over the plurality of separate, metallic lead frame parts on all sides,

wherein, on the attachment side, the potting body and the plurality of separate, metallic lead frame parts are flush with one another, or the potting body projects beyond the plurality of separate, metallic lead frame parts, and

wherein, concerning dielectric solids, side surfaces of the plurality of separate, metallic lead frame parts are covered directly exclusively by the potting body or by the potting body together with the encapsulation body.

2 . The optoelectronic semiconductor device according to claim 1 ,

wherein the carrier further comprises a plurality of metallizations,

wherein the plurality of metallizations partially form the mounting side and/or the attachment side, and

wherein each starts from an associated one of the plurality of separate, metallic lead frame parts and extend directly onto the potting body.

3 . The optoelectronic semiconductor device according to claim 2 , wherein, at the mounting side, a minimum distance between adjacent metallizations is at most 70 μm.

4 . The optoelectronic semiconductor device according to claim 1 , wherein, at the mounting side, a minimum distance between adjacent lead frame parts is at most 70 μm.

5 . The optoelectronic semiconductor device according to claim 1 , wherein the plurality of separate, metallic lead frame parts are wider outside the potting body than inside the potting body as viewed in a direction parallel to the attachment side.

6 . The optoelectronic semiconductor device according to claim 1 , wherein, on the mounting side, the plurality of separate, metallic lead frame parts are directly surrounded all around by the potting body.

7 . The optoelectronic semiconductor device according to claim 1 , wherein the optoelectronic semiconductor chip is a flip chip mounted directly on the mounting side.

8 . The optoelectronic semiconductor device according to claim 1 , wherein the potting body is of one-piece fashion and the plurality of separate, metallic lead frame parts have a thickness of at most 0.5 mm.

9 . The optoelectronic semiconductor device according to claim 1 , wherein, as seen in plan view on the attachment side, a distance between an outer outline of the carrier and the plurality of separate, metallic lead frame parts is at least 10 μm and at most 1 mm all around.

10 . The optoelectronic semiconductor device according to claim 1 ,

wherein the carrier is planar, and

wherein the carrier is flat such that, in a direction parallel to the attachment side, a lateral extent of the carrier is at least three times greater than a thickness of the carrier in a direction perpendicular to the attachment side.

11 . The optoelectronic semiconductor device according to claim 1 , wherein the potting body forms a cavity in which the semiconductor optoelectronic chip is mounted such that the potting body projects beyond the optoelectronic semiconductor chip in a direction away from the attachment side.

12 . The optoelectronic semiconductor device according to claim 1 , wherein the encapsulation body completely covers the optoelectronic semiconductor chip.

13 . A panel carrying a plurality of optoelectronic semiconductor devices, each optoelectronic semiconductor device of the plurality of semiconductor devices comprising:

a carrier;

an optoelectronic semiconductor chip configured to generate radiation and attached to a mounting side of the carrier; and

an encapsulation body at least partially transparent to the radiation,

wherein the carrier is composed of a plurality of separate, metallic lead frame parts and of a potting body, the potting body holding the plurality of separate, metallic lead frame parts together,

wherein the plurality of separate, metallic lead frame parts project beyond the potting body at the mounting side,

wherein an attachment side of the carrier is opposite the mounting side so that the mounting side is further away from the attachment side than sides of the potting body facing away from the attachment side,

wherein the attachment side is configured for surface mounting,

wherein, as seen in a plan view of the attachment side, the potting body projects over the plurality of separate, metallic lead frame parts on all sides,

wherein, on the attachment side, the potting body and the plurality of separate, metallic lead frame parts are flush with one another, or the potting body projects beyond the plurality of separate, metallic lead frame parts, and

wherein, concerning dielectric solids, side surfaces of the plurality of separate, metallic lead frame parts are covered directly exclusively by the potting body or by the potting body together with the encapsulation body; and

the panel comprising:

a plurality of component units such that each of the plurality of component units is provided with one of the plurality of optoelectronic semiconductor devices,

wherein the potting body extends continuously across all of the plurality of component units of a component group,

wherein the panel comprises a plurality of the component groups such that each of the plurality of component groups includes a plurality of the component units,

wherein a metallic support bar is located between at least some adjacent component groups and extends continuously along a plurality of the component groups,

wherein the metallic support bar is of the same material as the plurality of separate, metallic lead frame parts and is at least as thick as the plurality of separate, metallic lead frame parts,

wherein the metallic support bar comprises a plurality of anchoring bays as viewed in plan view of the attachment sides of adjacent ones of the component units, and

wherein the potting body engages in the plurality of anchoring bays.

14 . An optoelectronic semiconductor device comprising:

a carrier;

an optoelectronic semiconductor chip configured to generate radiation and attached to a mounting side of the carrier;

an encapsulation body at least partially transparent to the radiation,

wherein the carrier is composed of a plurality of separate, metallic lead frame parts and of a potting body, the potting body holding the plurality of separate, metallic lead frame parts together; and

a further lead frame part,

wherein the further lead frame part is thinner than the carrier,

wherein the further lead frame part is made of the same material as the plurality of separate, metallic lead frame parts,

wherein the plurality of separate, metallic lead frame parts project beyond the potting body at the mounting side,

wherein an attachment side of the carrier is opposite the mounting side so that the mounting side is further away from the attachment side than sides of the potting body facing away from the attachment side,

wherein the attachment side is configured for surface mounting,

wherein, as seen in a plan view of the attachment side, the potting body projects over the plurality of separate, metallic lead frame parts on all sides,

wherein, on the attachment side, the potting body and the plurality of separate, metallic lead frame parts are flush with one another, or the potting body projects beyond the plurality of separate, metallic lead frame parts, and

wherein, concerning dielectric solids, side surfaces of the plurality of separate, metallic lead frame parts are covered directly exclusively by the potting body or by the potting body together with the encapsulation body.

15 . The optoelectronic semiconductor device according to claim 14 , wherein the further lead frame part is electrically non-functional and electrically isolated from the plurality of separate, metallic lead frame parts.

16 . An optoelectronic semiconductor device comprising:

a carrier;

an optoelectronic semiconductor chip configured to generate radiation and attached to a mounting side of the carrier; and

an encapsulation body at least partially transparent to the radiation,

wherein the carrier is composed of a plurality of separate, metallic lead frame parts and of a potting body, the potting body holding the plurality of separate, metallic lead frame parts together,

wherein the plurality of separate, metallic lead frame parts project beyond the potting body at the mounting side,

wherein an attachment side of the carrier is opposite the mounting side so that the mounting side is further away from the attachment side than sides of the potting body facing away from the attachment side,

wherein the attachment side is configured for surface mounting,

wherein, as seen in a plan view of the attachment side, the potting body projects over the plurality of separate, metallic lead frame parts on all sides,

wherein, on the attachment side, the potting body and the plurality of separate, metallic lead frame parts are flush with one another, or the potting body projects beyond the plurality of separate, metallic lead frame parts,

wherein, concerning dielectric solids, side surfaces of the plurality of separate, metallic lead frame parts are covered directly exclusively by the potting body or by the potting body together with the encapsulation body, and

wherein the plurality of separate, metallic lead frame parts has a greater thickness than the potting body.

17 . The optoelectronic semiconductor device according to claim 16 ,

wherein each one of the plurality of separate, metallic lead frame parts has a first main face and a second main face, the first main faces are in each case part of the mounting side and the second main faces are in each case flush with the potting body, and

wherein the first and second main faces are in each case free of the potting body.

18 . The optoelectronic semiconductor device according to claim 16 ,

wherein each one of the plurality of separate, metallic lead frame parts has a first main face and a second main face, the first main faces are in each case part of the mounting side and the second main faces provided with metallizations are in each case flush with the potting body, and

wherein the first and second main faces and the metallizations are in each case free of the potting body.

19 . The optoelectronic semiconductor device according to claim 16 ,

wherein each one of the plurality of separate, metallic lead frame parts has a first main face and a second main face, the first main faces are in each case part of the mounting side and the second main faces provided with metallizations are in each case flush with the potting body, and wherein the first and second main faces and the metallizations are in each case free of the potting body.