Surface-plasmon-pumped light emitting devices
Devices and techniques are provided for achieving OLED devices that include one or more plasmonic material exhibiting surface plasmon resonance and one or more outcoupling layers.
1 . An OLED device comprising:
a plurality of individually-addressable OLED pixels disposed over a substrate, comprising:
a first pixel comprising:
a first electrode disposed over the substrate;
a first emissive stack disposed over the first electrode, the first emissive stack comprising a first organic emissive material;
a second electrode disposed over the emissive stack; and
a first emissive outcoupling layer disposed over the second electrode or between the first electrode and the substrate, the first emissive outcoupling layer comprising a second emissive material comprising a material selected from a group consisting of: a quantum dot, perovskite nanocrystals, a metalorganic framework, a covalent-organic framework, a thermally activated delayed fluorescence (TADF) emitter, a fluorescent emitter, and a phosphorescent organic emitter,
wherein the first electrode or the second electrode non-radiatively transfers energy from the first organic emissive material to the first emissive outcoupling layer; and
a second pixel comprising:
a third electrode disposed over the substrate;
a second emissive stack disposed over the third electrode, the second emissive stack comprising the first organic emissive material;
a fourth electrode disposed over the emissive stack; and
a second emissive outcoupling layer disposed over the fourth electrode or between the third electrode and the substrate, the second emissive outcoupling layer comprising a third emissive material, different from the second emissive material, the third emissive material comprising a material selected from a group consisting of: a quantum dot, perovskite nanocrystals, a metalorganic framework, a covalent-organic framework, a thermally activated delayed fluorescence (TADF) emitter, a fluorescent emitter, a phosphorescent organic emitter, a material having a Stokes shift of not more than 20 nm, a downconverting material that converts a high-energy excitation state to a lower-energy wavelength emission, a molecule that changes the orientation of one or more transition dipole moments (TDMs) upon excitation of the molecule, or a combination thereof.
2 . The device of claim 1 , wherein each OLED pixel of the plurality of OLED pixels emits a color determined by the second emissive material.
3 . The device of claim 1 , wherein, within each OLED pixel, the emissive stack contains a single emissive layer.
4 . The device of claim 1 , wherein the first electrode is disposed between the emissive stack and the first emissive outcoupling layer and non-radiatively transfers energy from the first organic emissive material to the first emissive outcoupling layer.
5 . The device of claim 1 , wherein the second electrode is disposed between the first emissive stack and the first emissive outcoupling layer and non-radiatively transfers energy from the first organic emissive material to the first emissive outcoupling layer.
6 . The device of claim 1 , wherein the first emissive outcoupling layer is at least 1 nm from the first electrode or from the second electrode.
7 . The device of claim 1 , wherein the first emissive outcoupling layer is not more than 100 nm from the first electrode.
8 . The device of claim 1 , wherein the first emissive outcoupling layer is not more than 100 nm from the second electrode.
9 . The device of claim 1 , wherein each of the first electrode, the second electrode, or each of the first electrode and the second electrode comprises a material independently selected from the group consisting of: Au, Ag, Mg, Al, Ir, Pt, Ni, Cu, W, Ta, Fe, Cr, Ga, Rh, Ti, Ca, Ru, Pd, In, Bi, a small organic molecule, a polymer, SiO2, TiO2, AhO3, an insulating nitride, Si, Ge, and stacks or alloys of these materials.
10 . The device of claim 1 , wherein the second emissive material comprises a material having a Stokes shift of not more than 20 nm.
11 . The device of claim 1 , wherein the second emissive material comprises a material having a Stokes shift of not more than 10 nm.
12 . The device of claim 1 , wherein the second emissive material comprises a material having a Stokes shift of not more than 5 nm.
13 . The device of claim 1 , wherein the second emissive material comprises a downconverting material that converts a high-energy excitation state to a lower-energy wavelength emission.
14 . The device of claim 1 , wherein the second emissive material comprises a molecule that changes the orientation of one or more transition dipole moments (TDMs) upon excitation of the molecule.
15 . The device of claim 14 , wherein a concentration of the second emissive material varies within the emissive outcoupling layer.
16 . The device of claim 15 , wherein the concentration is graded in proportion to a distance from an interface of the emissive outcoupling layer.
17 . The device of claim 1 , wherein the second emissive outcoupling layer is disposed adjacent to the first emissive outcoupling layer.
18 . The device of claim 1 , wherein the third electrode or the fourth electrode non-radiatively transfers energy from the first organic emissive material to the second emissive outcoupling layer.