Light-transmissive multilayer structure comprising a barrier structure arranged between a substrate and an electrode structure for optoelectronic devices
A light-transmissive multilayer structure for optoelectronic devices contains a substrate, an electrode structure and a barrier structure arranged between the substrate and the electrode structure. The multilayer structure can be prepared as a deformable structure and it can be implemented in various optoelectronic devices.
1 . A light-transmissive multilayer structure for an optoelectronic device, the light-transmissive multilayer structure comprising:
a substrate,
an electrode structure, and
a barrier structure arranged between the substrate and the electrode structure,
wherein the barrier structure comprises barrier layers arranged in a barrier stack, the barrier stack comprising a backing layer (A) adjacent to the substrate, a buffer layer (C) adjacent to the electrode structure, and a blocking layer (B) arranged between the backing layer (A) and the buffer layer (C),
wherein the electrode structure comprises electrode layers arranged in an electrode stack, the electrode stack comprising a dielectric layer (E), and a metallic layer (D) arranged between the buffer layer (C) of the barrier structure and the dielectric layer (E);
wherein the buffer layer (C) comprises at least one material selected from a group consisting of TiO x , ZrO 2 , Nb 2 O 5 , TeO 2 and ZnS, wherein all materials of the buffer layer (C) have a refractive index value in a range from 2.2 to 2.6, and wherein a total thickness of the buffer layer (C) is from 10 to 60 nm,
wherein the metallic layer (D) comprises silver (Ag) and at least one metal selected from a group consisting of Al, Cu, Ti, Ge, Zn and Cr, and
wherein the layers (A)-(E) are directly adjacent to each other.
2 . The light-transmissive multilayer structure according to claim 1 wherein the metallic layer (D) has a total thickness of 4 to 13 mm.
3 . The light-transmissive multilayer structure according to claim 1 , wherein the dielectric layer (E) comprises at least one transparent conductive oxide selected from a group consisting of indium oxide (In 2 O 3 ), tin oxide (SnO 2 ), zinc oxide (ZnO), vanadium oxide (V 2 O 5 ), molybdenum oxide (MoO 3 ), tungsten oxide (WO 3 ), tin indium oxide (ITO), indium zinc oxide (IZO), aluminum zinc oxide (AZO) and indium gallium zinc oxide (IGZO).
4 . The light-transmissive multilayer structure according to claim 1 , wherein the dielectric layer (E) has a total thickness of 20 to 80 nm.
5 . The light-transmissive multilayer structure according to claim 1 , wherein the blocking layer (B) comprises at least one metal oxide selected from a group consisting of AlO x , SnO x , ZnO x , HfO x , Al y Ti z O, Al y Zr z O and Al y Zn z O, wherein all materials of the blocking layer (B) have a refractive index value in a range from 1.5 to 2.1.
6 . The light-transmissive multilayer structure according to claim 1 , wherein the blocking layer (B) has a total thickness of 10 to 100 nm.
7 . The light-transmissive multilayer structure according to claim 1 , wherein the backing layer (A) comprises at least one metal oxide selected from a group consisting of TiO x , SnO x , ZrO x , HfO x , Al y Ti z O and Al y Zr z O.
8 . The light-transmissive multilayer structure according to claim 1 , wherein the backing layer (A) has a total thickness of 2 to 20 nm.
9 . The light-transmissive multilayer structure according to claim 1 , wherein all materials the of the backing layer (A) have a refractive index value (n) in a range from 1.6 to 2.6.
10 . The light-transmissive multilayer structure according to claim 1 , wherein the buffer layer (C) comprises mainly TiO x , wherein all materials of the buffer layer (C) have refractive index value (n) in a range from 2.4 to 2.5.
11 . The light-transmissive multilayer structure according to any claim 1 , wherein the buffer layer (C) has a total thickness of 20 to 50 nm.
12 . The light-transmissive multilayer structure according to claim 1 , wherein the blocking layer (B) comprises mainly AlO x , wherein all materials of the blocking layer (B) have refractive index value in a range from 1.6 to 2.0.
13 . The light-transmissive multilayer structure according to claim 1 , wherein the metallic layer (D) comprises Ag and Cu in the amount of 90 at % of Ag and 10 at % of Cu.
14 . The light-transmissive multilayer structure according claim 1 , wherein the layers (A)-(E) are independently selected from a monolayer structure or a multilayer structure, the multilayer structure comprising two or more than two sublayers.
15 . The light-transmissive multilayer structure according to claim 1 , wherein the substrate is made of a deformable foil comprising at least one material selected from a group consisting of polyethylene terephthalate (PET), polyethylene naphthalene (PEN), polyethylene (PE), polypropylene (PP), polyethersulfone (PES), polyimide (PI), polystyrene (PS), ethylene/tetrafluoroethylene (ETFE) and parylene.