Magnetization rotation element, magnetoresistive effect element, and magnetic memory
A magnetization rotation element includes a spin-orbit torque wiring, a first ferromagnetic layer, a first pillar, a second pillar, and a first conductive layer. The first ferromagnetic layer faces at least a part of the spin-orbit torque wiring. The first conductive layer is in contact with the spin-orbit torque wiring at a position not overlapping the first ferromagnetic layer when viewed from a laminating direction. The first pillar penetrates the spin-orbit torque wiring and is in contact with the spin-orbit torque wiring and the first conductive layer. The second pillar is in contact with the spin-orbit torque wiring at a position sandwiching the first ferromagnetic layer together with the first pillar when viewed from the laminating direction.
1 . A magnetization rotation element comprising:
a spin-orbit torque wiring;
a first ferromagnetic layer;
a first pillar;
a second pillar; and
a first conductive layer,
wherein the first ferromagnetic layer faces at least a part of the spin-orbit torque wiring,
wherein the first conductive layer is in contact with the spin-orbit torque wiring at a position not overlapping the first ferromagnetic layer when viewed from a laminating direction,
wherein the first pillar penetrates the spin-orbit torque wiring and is in contact with the spin-orbit torque wiring and the first conductive layer, and
wherein the second pillar is in contact with the spin-orbit torque wiring at a position sandwiching the first ferromagnetic layer together with the first pillar when viewed from the laminating direction.
2 . The magnetization rotation element according to claim 1 ,
wherein a part of a side wall of the first pillar is in contact with the first conductive layer over the entire circumstance.
3 . The magnetization rotation element according to claim 1 ,
wherein a first end of the first pillar in the laminating direction is in contact with the first conductive layer.
4 . The magnetization rotation element according to claim 1 , further comprising:
a covering layer,
wherein the covering layer covers a surface other than a surface in contact with the spin-orbit torque wiring of the first conductive layer.
5 . The magnetization rotation element according to claim 4 ,
wherein the covering layer has an etching rate lower than that of the first conductive layer when ion milling is performed under the same conditions.
6 . The magnetization rotation element according to claim 4 ,
wherein the covering layer has an etching rate lower than that of the first conductive layer in reactive ion etching under the same conditions.
7 . The magnetization rotation element according to claim 1 ,
wherein the first conductive layer has a film thickness of 5% or more of a height of a perpendicular line extending from a second end of the first pillar to the spin-orbit torque wiring, and
wherein the second end is an end of the first pillar farther from the first conductive layer in the laminating direction.
8 . The magnetization rotation element according to claim 1 ,
wherein the first conductive layer has a film thickness of 300% or less of a height of a perpendicular line extending from a second end of the first pillar to the spin-orbit torque wiring, and
wherein the second end is an end of the first pillar farther from the first conductive layer in the laminating direction.
9 . The magnetization rotation element according to claim 1 ,
wherein the first conductive layer and the second pillar are in contact with the same surface of the spin-orbit torque wiring, and
wherein the first conductive layer and the second pillar have the same main component among their constituent elements.
10 . The magnetization rotation element according to claim 1 , further comprising:
a second conductive layer,
wherein the second conductive layer is in contact with the spin-orbit torque wiring, and
wherein the second pillar penetrates the spin-orbit torque wiring and is in contact with the spin-orbit torque wiring and the second conductive layer.
11 . A magnetoresistive effect element comprising:
at least the magnetization rotation element according to claim 1 , a non-magnetic layer, and a second ferromagnetic layer,
wherein the first ferromagnetic layer of the magnetization rotation element and the second ferromagnetic layer sandwich the non-magnetic layer.
12 . A magnetic memory comprising:
the magnetoresistive effect element according to claim 11 .