Liquid metal printed 2D ultrahigh mobility conducting oxide transistors
In a liquid printing method, a second workpiece is applied onto a first workpiece. A metal on the second workpiece contacts a dielectric on the first workpiece thereby forming an alloyed oxide film. This can be used to form a liquid metal printed 2D alloyed oxide film transistor. The alloyed oxide film can be InO x or other materials.
1 . A liquid printing method comprising:
providing a first workpiece, wherein a surface of the first workpiece includes a dielectric;
providing a second workpiece that includes a metal; and
applying the second workpiece onto the first workpiece at a first pressure such that the metal contacts the dielectric thereby forming an alloyed oxide film.
2 . The method of claim 1 , wherein the first workpiece and the second workpiece are substrates.
3 . The method of claim 2 , wherein the liquid printing occurs at a temperature of approximately 40° C. to 450° C.
4 . The method of claim 2 , wherein the liquid printing forms a monolayer film.
5 . The method of claim 2 , wherein the liquid printing forms a bilayer film.
6 . The method of claim 2 , wherein the liquid printing forms a multilayer film.
7 . The method of claim 2 , wherein the alloyed oxide film is nanocrystalline.
8 . The method of claim 2 , wherein the metal has a purity of at least 99%.
9 . The method of claim 2 , wherein the first pressure is from 10 psi to 10,000 psi.
10 . The method of claim 2 , wherein a duration of the applying at the first pressure is from 1-10 seconds.
11 . The method of claim 2 , wherein a speed of a spreading meniscus for the metal is from 0.1 cm/s to 60 cm/s.
12 . The method of claim 2 , wherein the first workpiece and/or the second workpiece is heated to above a melting point of the metal.
13 . The method of claim 2 , wherein the first workpiece and/or the second workpiece is heated to from 100° C. to 250° C.
14 . The method of claim 2 , wherein the first workpiece and/or the second workpiece is heated to at least 165° C. before the applying.
15 . The method of claim 2 , further comprising:
separating the first workpiece from the second workpiece after the applying; and
removing the metal from the first workpiece and/or the second workpiece after the applying.
16 . The method of claim 2 , further comprising patterning the alloyed oxide film.
17 . The method of claim 2 , wherein the second workpiece is a plastic film.
18 . The method of claim 17 , wherein the plastic film is a polyimide, polyethylene naphthalate, or polyethylene terephthalate.
19 . The method of claim 2 , wherein a surface of the second workpiece further includes the dielectric, and wherein the dielectric is SiO 2 .
20 . The method of claim 2 , wherein the metal includes In and the alloyed oxide film is an InO x film.
21 . The method of claim 20 , wherein the InO x film is from 94% to greater than 99% transmissive.
22 . The method of claim 20 , wherein the InO x film has a grain size from 6 nm to 45 nm.
23 . The method of claim 2 , wherein the metal includes In and the alloyed oxide film is a metal-doped InO x film.
24 . The method of claim 23 , wherein the metal-doped InO x film is indium tin oxide (ITO).
25 . The method of claim 2 , wherein the metal includes Sb and the alloyed oxide film is an antimony tin oxide film.
26 . The method of claim 2 , wherein the metal includes Ga.
27 . The method of claim 2 , wherein the metal includes Zn.
28 . The method of claim 2 , wherein the metal includes Sn.
29 . The method of claim 2 , wherein the alloyed oxide film is one of InZnO, InGaZnO x , InGaSnO x , SnO x , InSnO x , GaSnO x , SbSnO x , or InGaO x .
30 . The method of claim 2 , wherein the dielectric is SiO x , AlO x , YO x , HfO x , ZrO x , LaO x , or a rare earth, high-k dielectric.
31 . The method of claim 1 , wherein the dielectric is GaO x , the metal is In, the second workpiece is a roller, and wherein the applying includes rolling the roller over the first workpiece.
32 . The method of claim 31 , wherein the liquid printing occurs at a temperature of approximately 40° C. to 300° C.
33 . The method of claim 31 , further comprising applying a second GaO x layer to the alloyed oxide film and applying a second alloyed oxide film to the second GaO x layer.
34 . The method of claim 31 , wherein the first pressure using the roller is from 0.1 N/cm of roller width to 100 N/cm of roller width.
35 . The method of claim 31 , wherein the metal and the first workpiece have a temperature from 40° C. to 450° C. during the applying.
36 . A liquid metal printed 2D alloyed oxide film transistor formed using the method of claim 1 .
37 . The liquid metal printed 2D alloyed oxide film transistor of claim 36 , wherein the alloyed oxide film is InO x .
38 . The liquid metal printed 2D alloyed oxide film transistor of claim 37 , wherein the 2D alloyed oxide film transistor has one or more arrays with a total area of at least 20 cm 2 .