Apparatus and method for processing substrate using supercritical fluid

1 . A method for processing a substrate comprising:

supplying an aging fluid containing carbon dioxide to a reactor to raise a pressure of the reactor to a first aging pressure higher than a critical pressure of carbon dioxide,

subsequently, venting the reactor to lower the pressure of the reactor to a second aging pressure higher than the critical pressure of carbon dioxide,

subsequently, supplying a first process fluid containing a metal precursor and carbon dioxide to the reactor so that the pressure of the reactor repeats rise and fall within a first pressure range a plurality of times, the first pressure range higher than the critical pressure of carbon dioxide,

subsequently, venting the reactor to lower the pressure of the reactor below the first pressure range,

subsequently, supplying a second process fluid containing hydrogen to the reactor so that the pressure of the reactor repeats rise and fall within a second pressure range a plurality of times, and

subsequently, a venting the reactor to lower the pressure of the reactor below the second pressure range,

wherein the second pressure range is less than the critical pressure of carbon dioxide.

2 . The method of claim 1 , wherein the first pressure range includes a first valley pressure and a first peak pressure such that the pressure of the reactor during the supplying the first process fluid is greater than or equal to the first valley pressure and less than or equal to the first peak pressure,

wherein the second pressure range includes a second valley pressure and a second peak pressure such that the pressure of the reactor during the supplying the second process fluid is greater than or equal to the second valley pressure and less than or equal to the second peak pressure,

wherein the first peak pressure is 85 to 170 bar, and the first valley pressure is 75 to 160 bar,

wherein the second peak pressure is 10 to 20 bar, and the second valley pressure is 5 to 15 bar.

3 . A method for processing a substrate comprising:

performing a supercritical process by repeating a first step, a first vent step, a second step, and a second vent step in order a plurality of times,

supplying, in the first step, a first process fluid containing a precursor and a first supercritical fluid to a reactor so that a pressure of the reactor repeats rise and fall within a first pressure range a plurality of times,

venting, in the first vent step, the reactor to lower the pressure of the reactor below the first pressure range,

supplying, in the second step, a second process fluid containing a reducing fluid to the reactor so that the pressure of the reactor repeats rise and fall within a second pressure range different from the first pressure range a plurality of times, and

venting, in the second vent step, the reactor to lower the pressure of the reactor below the second pressure range,

wherein the second pressure range is less than a critical pressure of the first supercritical fluid.

4 . The method of claim 3 , wherein a first period during which the first step is performed is greater than a second period during which the second step is performed.

5 . The method of claim 3 , wherein the precursor is MxLy, in which M is a metal, L is a ligand, and x and y are natural numbers, and the reducing fluid includes H 2 ,

wherein the precursor and the reducing fluid react to deposit metal of a preset thickness on the substrate by performing the supercritical process.

6 . The method of claim 3 further comprises,

a rinse step of removing, after the supercritical process, residue inside the reactor by supplying a rinse fluid containing a third supercritical fluid to the reactor.

7 . The method of claim 6 , wherein, in the rinse step, the rinse fluid is supplied to the reactor to raise the pressure of the reactor above the critical pressure of the first supercritical fluid, and then the reactor is vented to lower the pressure of the reactor below the critical pressure of the first supercritical fluid.

8 . The method of claim 1 , wherein the first pressure range includes a first valley pressure and a first peak pressure such that the pressure of the reactor during the first step is greater than or equal to the first valley pressure and less than or equal to the first peak pressure,

wherein the second pressure range includes a second valley pressure and a second peak pressure such that the pressure of the reactor during the second step is greater than or equal to the second valley pressure and less than or equal to the second peak pressure,

wherein the second peak pressure is less than the first peak pressure.

9 . The method of claim 8 , wherein the first peak pressure is greater than the critical pressure of the first supercritical fluid.

10 . The method of claim 8 , wherein the second peak pressure is less than the first valley pressure.

11 . The method of claim 3 , wherein the supercritical process is performed before the first step and further comprises an aging step for creating an environment inside the reactor,

wherein the aging step supplies a second supercritical fluid to the reactor so that the pressure of the reactor becomes higher than the critical pressure of the first supercritical fluid.

12 . The method of claim 11 , wherein the supercritical process comprises repeating the aging step, the first step, the first vent step, the second step, and the second vent step in order a plurality of times.

13 . The method of claim 11 , wherein, in the aging step, the second supercritical fluid is supplied to the reactor to raise the pressure of the reactor to a first aging pressure, then the reactor is vented to lower the pressure of the reactor to a second aging pressure.

14 . The method of claim 13 , wherein the second aging pressure is greater than the critical pressure of the first supercritical fluid.