Processing condition specifying method, substrate processing method, substrate product production method, computer program, storage medium, processing condition specifying device, and substrate processing apparatus

1 . A substrate processing method, comprising:

measuring a thickness of a target substrate, before performing an etching processing on the target substrate, to acquire measurement thickness information containing measurement values of thicknesses measured at a plurality of points located on the target substrate in a radial direction of the target substrate, the etching processing being a processing to be performed on the target substrate while a discharge position of an etching liquid is moved in the radial direction of the target substrate;

calculating a prediction thickness information piece for each of a plurality of processing conditions based on the measurement thickness information, the prediction thickness information piece containing prediction values of thicknesses after the etching processing at the respective points on the target substrate;

evaluating according to a prescribed evaluation method the prediction thickness information pieces each calculated for a corresponding one of the processing conditions and selecting a prediction thickness information piece from among the prediction thickness information pieces, the prescribed evaluation method being a method for evaluation as to how close a prediction thickness pattern indicated by the prediction thickness information piece is to flat;

specifying a processing condition, of the processing conditions, corresponding to the selected prediction thickness information piece; and

performing, based on the specified processing condition, the etching processing on the target substrate with the etching liquid while moving the discharge position of the etching liquid in the radial direction of the target substrate.

2 . The substrate processing method according to claim 1 , further comprising

calculating an end area processing time based on, of the prediction values contained in the selected prediction thickness information piece, a maximum value of prediction values of thicknesses in an end area of the target substrate in the radial direction, wherein

the end area processing time indicates a processing time for which the etching processing is performed on the end area of the target substrate in a state in which the discharge position of the etching liquid is fixed.

3 . The substrate processing method according to claim 2 , wherein

in the calculating an end area processing time, the end area processing time is calculated based on the maximum value of the prediction values in the end area of the target substrate, a target thickness value of the target substrate, and a processing coefficient, and

the processing coefficient is preset and indicates an etching amount of a substrate with the etching liquid per unit time.

4 . The substrate processing method according to claim 1 , wherein

in the calculating a prediction thickness information piece, the prediction thickness information pieces are calculated based on the measurement thickness information of the target substrate, a target thickness value of the target substrate, and an actually measured etching amount information containing etching amounts at a plurality of points located on a substrate in a radial direction of the substrate, the etching amounts being obtained by actual measurement in the radial direction of the substrate, the actual measurement being done in advance, and

the etching amounts contained in the actually measured etching amount information each indicate an etching amount in processing the substrate according to a processing condition, of the processing conditions, associated with the actually measured etching amount information.

5 . The substrate processing method according to claim 4 , wherein

the calculating a prediction thickness information piece includes:

calculating a processing time for each of the points on the target substrate based on the measurement thickness information of the target substrate, the target thickness value of the target substrate, and the actually measured etching amount information, the processing time being a processing time when a thickness at each of the points on the target substrate reaches the target thickness value;

selecting a shortest processing time from among the processing times each calculated for a corresponding one of the points on the target substrate; and

calculating the prediction thickness information piece based on the measurement thickness information of the target substrate, the actually measured etching amount information, and the shortest processing time.

6 . The substrate processing method according to claim 1 , wherein

in the selecting a prediction thickness information piece, the prediction thickness information pieces are evaluated using prediction values of the thicknesses after the etching processing at two or more points in an inner area of a surface of the target substrate, the inner area being located inward of an end area of the surface of the target substrate in the radial direction of the target substrate.

7 . The substrate processing method according to claim 1 , wherein

the prediction thickness pattern indicates a distribution of the prediction values of the thicknesses of the target substrate in the radial direction of the target substrate,

the prescribed evaluation method includes at least one evaluation method of a first evaluation method, a second evaluation method, and a third evaluation method,

the first evaluation method is a method for evaluation as to how close the prediction thickness pattern is to flat using an index indicating a degree of unevenness of the prediction thickness pattern,

the second evaluation method is a method for evaluation as to how close the prediction thickness pattern is to flat using an index that is based on the number of prediction values, of the prediction values constituting the prediction thickness pattern, close to a target thickness value of the target substrate, and

the third evaluation method is a method for evaluation as to how close the prediction thickness pattern is to flat using an index indicating how close an inclination of the prediction thickness pattern to zero.

8 . The substrate processing method according to claim 7 , wherein

the first evaluation method includes at least one method of a first method, a second method, a third method, and a fourth method,

the first method of the first evaluation method is a method for evaluation as to how close the prediction thickness pattern is to flat using as the index differences that are values obtained by subtracting the prediction values constituting the prediction thickness pattern from respective values on a first evaluation straight line,

the first evaluation straight line is a straight line tangent to the prediction thickness pattern from a side larger than the prediction thickness pattern,

the second method of the first evaluation method is a method for evaluation as to how close the prediction thickness pattern is to flat using as the index differences that are values obtained by subtracting respective values on a second evaluation straight line from the prediction values constituting the prediction thickness pattern,

the second evaluation straight line is a straight line tangent to the prediction thickness pattern from a side smaller than the prediction thickness pattern,

the third method of the first evaluation method is a method for evaluation as to how close the prediction thickness pattern is to flat using as the index differences that are values obtained by subtracting respective values on a third evaluation straight line from the prediction values constituting the prediction thickness pattern,

the third evaluation straight line is an approximate straight line of the prediction thickness pattern obtained by a least-squares method,

the fourth method of the first evaluation method is a method for evaluation as to how close the prediction thickness pattern is to flat using as the index differences that are values obtained by subtracting respective values on a fourth evaluation straight line from the prediction values constituting the prediction thickness pattern, and

the fourth evaluation straight line is a straight line indicating a target thickness value of the target substrate.

9 . The substrate processing method according to claim 7 , wherein

the second evaluation method includes at least one method of a first method and a second method,

the first method of the second evaluation method is a method for evaluation as to how close the prediction thickness pattern is to flat using as the index the number of prediction values, of the prediction values constituting the prediction thickness pattern, present in a tolerable range including a fifth evaluation straight line,

the fifth evaluation straight line is a straight line indicating the target thickness value of the target substrate,

the second method of the second evaluation method is a method for evaluation as to how close the prediction thickness pattern is to flat using as the index differences that are values obtained by subtracting respective values on a sixth evaluation straight line from the prediction values constituting the prediction thickness pattern, and

the sixth evaluation straight line is a straight line indicating the target thickness value of the target substrate.

10 . The substrate processing method according to claim 7 , wherein

the third evaluation method includes at least one method of a first method and a second method,

the first method of the third evaluation method is a method for evaluation as to how close the prediction thickness pattern is to flat using as the index an inclination of a seventh evaluation straight line relative to an eighth evaluation straight line,

the seventh evaluation straight line is an approximate straight line of the prediction thickness pattern obtained by a least-squares method,

the eighth evaluation straight line is a straight line indicating a constant value, and

the second method of the third evaluation method is a method for evaluation as to how close the prediction thickness pattern is to flat using as the index an inclination of the prediction thickness pattern at each of the points located on the target substrate in the radial direction of the target substrate.

11 . A substrate product production method for producing a substrate product, wherein

the substrate product is produced by performing the etching processing on the target substrate according to the substrate processing method according to claim 1 , the substrate product being the target substrate after the etching processing.

12 . A substrate processing apparatus, comprising:

a thickness measuring section configured to measure a thickness of a target substrate, before performing an etching processing on the target substrate, to acquire measurement thickness information containing measurement values of thicknesses measured at a plurality of points located on the target substrate in a radial direction of the target substrate, the etching processing being a processing to be performed on the target substrate while a discharge position of an etching liquid is moved in the radial direction of the target substrate;

a thickness predicting section configured to calculate a prediction thickness information piece for each of a plurality of processing conditions based on the measurement thickness information, the prediction thickness information piece containing prediction values of thicknesses after the etching processing at the respective points on the target substrate;

an evaluating section configured to evaluate according to a prescribed evaluation method the prediction thickness information pieces each calculated for a corresponding one of the processing conditions and select a prediction thickness information piece from among the prediction thickness information pieces, the prescribed evaluation method being a method for evaluation as to how close a prediction thickness pattern indicated by the prediction thickness information piece is to flat;

a specifying section configured to specify a processing condition, of the processing conditions, corresponding to the selected prediction thickness information piece; and

a processing apparatus configured to process the target substrate with the etching liquid while moving the discharge position of the etching liquid in the radial direction of the target substrate based on the processing condition specified by the processing condition specifying section.