IP Library › Granted Patent US 12707932
Granted Patent B2
US 12707932 · App. 18/393,769 · Granted Aug 11, 2026

Handling assembly, handling system and method

Inventors: Bhaskar Jyoti Krishnatreya (Hillsboro, OR); Michael J. Baker (Gilbert, AZ); Feras Eid (Chandler, AZ); Wenhao Li (Chandler, AZ); Veronica Strong (Brussels, BE); Thomas Sounart (Chandler, AZ); Adel A. Elsherbini (Chandler, AZ); Johanna M. Swan (Scottsdale, AZ); Kimin Jun (Portland, OR); Yi Shi (Chandler, AZ); Xavier Brun (Chandler, AZ); Shawna M. Liff (Scottsdale, AZ); Edison Chien-An Chen (San Jose, CA)
Assignee: Intel Corporation
H10P72/722H10P72/0446H10P72/50
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Quick Facts
Patent No.
US 12707932
App. No.
18/393,769
Granted
Aug 11, 2026
Kind
B2
Abstract

Various aspects may provide a handling assembly. The handling assembly may include a body with a component-handling surface. The component-handling surface may include a first component-handling region configured to accommodate a first semiconductor component arrangement and a second component-handling region configured to accommodate a second semiconductor component arrangement. The handling assembly may further include an electrode arrangement disposed at the body in a manner so as to be capable of independently toggling each of the first component-handling region and the second component-handling region between an active state and an inactive state. In the active state the electrode arrangement may provide an electrostatic retention force over the component-handling region, configured to retain a corresponding semiconductor component arrangement on the component-handling region.

Claims (62)

1 . An apparatus comprising:

a body comprising a component-handling surface,

wherein the component-handling surface comprises a first component-handling region configured to accommodate a first semiconductor component arrangement and a second component-handling region configured to accommodate a second semiconductor component arrangement; and

an electrode arrangement disposed at the body in a manner so as to be capable of independently toggling each of the first component-handling region and the second component-handling region between an active state and an inactive state, wherein in the active state the electrode arrangement provides an electrostatic retention force at the component-handling region, wherein the electrostatic retention force is configured to retain a corresponding semiconductor component arrangement on the component-handling region; and

wherein the first component-handling region is of a different shape or size from the second component-handling region.

2 . The apparatus of claim 1 ,

wherein the electrode arrangement comprises at least one positive electrode and at least one negative electrode configured to generate the electrostatic retention force.

3 . The apparatus of claim 1 ,

wherein the electrode arrangement comprises:

a first electrode sub-arrangement comprising at least one positive electrode and at least one negative electrode which are aligned with the first component-handling region, and

a second electrode sub-arrangement comprising at least one other positive electrode and at least one other negative electrode which are aligned with the second component-handling region,

wherein, with the first component-handling region in the active state, the first electrode sub-arrangement is configured to generate a first electrostatic retention force at the first component-handling region to retain the first semiconductor component arrangement on the first component-handling region, and

wherein, with the second component-handling region in the active state, the second electrode sub-arrangement is configured to generate a second electrostatic retention force at the second component-handling region to retain the second semiconductor component arrangement on the second component-handling region.

4 . The apparatus of claim 3 ,

wherein the first electrostatic retention force is of a same magnitude as the second electrostatic retention force.

5 . The apparatus of claim 3 ,

wherein the first electrostatic retention force is of a different magnitude from the second electrostatic retention force.

6 . The apparatus of claim 1 ,

wherein the first component-handling region is of a same shape or size as the second component-handling region.

7 . An apparatus comprising:

a body comprising a component-handling surface,

wherein the component-handling surface comprises a first component-handling region configured to accommodate a first semiconductor component arrangement and a second component-handling region configured to accommodate a second semiconductor component arrangement; and

an electrode arrangement disposed at the body in a manner so as to be capable of independently toggling each of the first component-handling region and the second component-handling region between an active state and an inactive state, wherein in the active state the electrode arrangement provides an electrostatic retention force at the component-handling region, wherein the electrostatic retention force is configured to retain a corresponding semiconductor component arrangement on the component-handling region; and

wherein the electrode arrangement comprises a plurality of electrodes which are fully embedded within the body, with a portion of the body interposed between the plurality of electrodes and the component-handling surface of the body; or

wherein the electrode arrangement comprises a plurality of electrodes which are partially embedded within the body, with a portion of each electrode protruding from the component-handling surface of the body.

8 . The apparatus of claim 1 ,

wherein the electrode arrangement comprises a plurality of electrodes which are fully embedded within the body, with a portion of the body interposed between the plurality of electrodes and the component-handling surface of the body.

9 . The apparatus of claim 1 ,

wherein the electrode arrangement comprises a plurality of electrodes which are partially embedded within the body, with a portion of each electrode protruding from the component-handling surface of the body.

10 . The apparatus of claim 1 , further comprising:

a dielectric layer or a non-conducting layer over the electrode arrangement.

11 . The apparatus of claim 1 , further comprising:

a traction layer over the component-handling surface of the body, such that an outer surface of the traction layer is capable of directly engaging the first semiconductor component arrangement and the second semiconductor component arrangement.

12 . The apparatus of claim 1 ,

wherein the body comprises a semiconductor material.

13 . The apparatus of claim 7 ,

wherein the first component-handling region is of a different shape or size from the second component-handling region.

14 . The apparatus of claim 13 ,

wherein the electrode arrangement comprises at least one positive electrode and at least one negative electrode configured to generate the electrostatic retention force.

15 . The apparatus of claim 13 ,

wherein the electrode arrangement comprises:

a first electrode sub-arrangement comprising at least one positive electrode and at least one negative electrode which are aligned with the first component-handling region, and

a second electrode sub-arrangement comprising at least one other positive electrode and at least one other negative electrode which are aligned with the second component-handling region,

wherein, with the first component-handling region in the active state, the first electrode sub-arrangement is configured to generate a first electrostatic retention force at the first component-handling region to retain the first semiconductor component arrangement on the first component-handling region, and

wherein, with the second component-handling region in the active state, the second electrode sub-arrangement is configured to generate a second electrostatic retention force at the second component-handling region to retain the second semiconductor component arrangement on the second component-handling region.

16 . The apparatus of claim 15 ,

wherein the first electrostatic retention force is of a same magnitude as the second electrostatic retention force.

17 . An apparatus comprising:

a body comprising a component-handling surface,

wherein the component-handling surface comprises a first component-handling region configured to accommodate a first semiconductor component arrangement and a second component-handling region configured to accommodate a second semiconductor component arrangement; and

an electrode arrangement disposed at the body in a manner so as to be capable of independently toggling each of the first component-handling region and the second component-handling region between an active state and an inactive state, wherein in the active state the electrode arrangement provides an electrostatic retention force at the component-handling region, wherein the electrostatic retention force is configured to retain a corresponding semiconductor component arrangement on the component-handling region; and

wherein the body comprises a semiconductor material.

18 . The apparatus of claim 17 ,

wherein the electrode arrangement comprises at least one positive electrode and at least one negative electrode configured to generate the electrostatic retention force.

19 . The apparatus of claim 17 ,

wherein the electrode arrangement comprises:

a first electrode sub-arrangement comprising at least one positive electrode and at least one negative electrode which are aligned with the first component-handling region, and

a second electrode sub-arrangement comprising at least one other positive electrode and at least one other negative electrode which are aligned with the second component-handling region,

wherein, with the first component-handling region in the active state, the first electrode sub-arrangement is configured to generate a first electrostatic retention force at the first component-handling region to retain the first semiconductor component arrangement on the first component-handling region, and

wherein, with the second component-handling region in the active state, the second electrode sub-arrangement is configured to generate a second electrostatic retention force at the second component-handling region to retain the second semiconductor component arrangement on the second component-handling region.

20 . The apparatus of claim 19 ,

wherein the first electrostatic retention force is of a same magnitude as the second electrostatic retention force.