Method for semiconductor patterning using ion implanted organic masks

1 . A method of manufacturing a semiconductor device, comprising:

sequentially disposing a hard mask layer, an organic layer, and a metal-containing photoresist layer on a substrate;

patterning the metal-containing photoresist layer to form a first mask pattern exposing a first region of the organic layer;

implanting ions into the first region of the organic layer exposed by the first mask pattern;

removing the first mask pattern and a second region of the organic layer that is not ion-implanted to form a second mask pattern exposing a partial region of the hard mask layer; and

removing the partial region of the hard mask layer exposed by the second mask pattern to form a third mask pattern.

2 . The method as claimed in claim 1 , wherein the forming of the first mask pattern includes:

exposing a partial region of the metal-containing photoresist layer; and

removing a rest unexposed region to form the first mask pattern.

3 . The method as claimed in claim 1 , wherein the first mask pattern includes a metal oxide obtained by oxidizing metal of the metal-containing photoresist layer.

4 . The method as claimed in claim 1 , wherein the implanting of ions into the first region of the organic layer includes increasing an etch selectivity of the first region, which is ion-implanted, of the organic layer to the second region that is not ion-implanted.

5 . The method as claimed in claim 1 , wherein the implanting of ions into the first region of the organic layer includes increasing an etch selectivity of the first region, which is ion-implanted, of the organic layer to the hard mask layer.

6 . The method as claimed in claim 1 , wherein the metal-containing photoresist layer includes tin (Sn), antimony (Sb), cobalt (Co), hafnium (Hf), or palladium (Pd).

7 . The method as claimed in claim 1 , wherein the ions implanted into the first region of the organic layer include boron ions, carbon ions, argon ions, phosphorus ions, sulfur ions, or arsenic ions.

8 . The method as claimed in claim 1 , wherein the second mask pattern is a reverse pattern of the first mask pattern.

9 . The method as claimed in claim 1 , wherein the forming of the second mask pattern includes performing wet etching or dry etching on the first mask pattern and the second region, which is not ion-implanted, of the organic layer.

10 . The method as claimed in claim 1 , wherein the third mask pattern is a reverse pattern of the first mask pattern.

11 . A method of manufacturing a semiconductor device, comprising:

providing a substrate in which an active region defined by a device isolation layer is located;

forming a word line extending in a first horizontal direction within the substrate;

forming an etch target layer on the substrate;

sequentially forming a hard mask layer, an organic layer, and a metal-containing photoresist layer covering the etch target layer;

patterning the metal-containing photoresist layer to form a first mask pattern exposing a first region of the organic layer;

implanting ions into the first region of the organic layer exposed by the first mask pattern;

removing the first mask pattern and a second region, which is not ion-implanted, of the organic layer to form a second mask pattern exposing a partial region of the hard mask layer;

removing the partial region of the hard mask layer exposed by the second mask pattern to form a third mask pattern exposing a portion of the etch target layer; and

etching the etch target layer using the third mask pattern.

12 . The method as claimed in claim 11 , wherein the etching of the etch target layer includes etching the etch target layer to form a bit line extending in a second horizontal direction crossing the first horizontal direction on the substrate.

13 . The method as claimed in claim 11 , further comprising:

forming a bit line extending in a second horizontal direction crossing the first horizontal direction on the substrate after the etching of the etch target layer,

wherein the etching of the etch target layer includes forming a direct contact hole in which a direct contact electrically connecting the bit line to the active region is located.

14 . The method as claimed in claim 11 , wherein the forming of the first mask pattern includes:

exposing a partial region of the metal-containing photoresist layer; and

removing a rest unexposed region to form the first mask pattern.

15 . The method as claimed in claim 11 , wherein the second mask pattern is a reverse pattern of the first mask pattern.

16 . The method as claimed in claim 11 , wherein the third mask pattern is a reverse pattern of the first mask pattern.

17 . The method as claimed in claim 11 , wherein the etching of the etch target layer includes forming a pattern which is a reverse pattern of the first mask pattern.

18 . A method of manufacturing a semiconductor device, comprising:

sequentially disposing an etch target layer, a hard mask layer, an organic layer, and a metal-containing photoresist layer on a substrate;

negative-patterning the metal-containing photoresist layer to form a first mask pattern exposing a first region of the organic layer;

implanting ions into the first region of the organic layer exposed by the first mask pattern;

removing the first mask pattern;

removing a second region, that is not ion-implanted, of the organic layer to form a second mask pattern exposing a partial region of the hard mask layer;

removing the partial region of the hard mask layer exposed by the second mask pattern to form a third mask pattern exposing a portion of the etch target layer; and

etching the etch target layer using the third mask pattern,

wherein the etching of the etch target layer includes forming a pattern which is a reverse pattern of the first mask pattern.

19 . The method as claimed in claim 18 , wherein the metal-containing photoresist layer includes tin (Sn), antimony (Sb), cobalt (Co), hafnium (Hf), or palladium (Pd).

20 . The method as claimed in claim 18 , wherein the ions implanted into the first region of the organic layer include boron ions, carbon ions, argon ions, phosphorus ions, sulfur ions, or arsenic ions.