Semiconductor device
View Patent ↗According to one embodiment, a semiconductor device includes a pellet; a first conductor and a second conductor between which the pellet is interposed in a first direction; a first bonding material that bonds the pellet and the first conductor; and a second bonding material that bonds the pellet and the second conductor. A first surface of the first conductor facing the pellet has a depression.
1 . A semiconductor device comprising:
a pellet;
a first conductor and a second conductor between which the pellet is interposed in a first direction;
a first bonding material that bonds the pellet and the first conductor; and
a second bonding material that bonds the pellet and the second conductor,
wherein
a first surface of the first conductor facing the pellet has a depression, and
a distance between the first surface and a center portion of the pellet is larger than a distance between the first surface and a peripheral portion of the pellet.
2 . The semiconductor device according to claim 1 , wherein
the depression overlaps the pellet and is smaller than the pellet when viewed in the first direction.
3 . The semiconductor device according to claim 2 , wherein
the first surface of the first conductor has a projection in a region outside the depression in a region that overlaps the pellet when viewed in the first direction.
4 . The semiconductor device according to claim 2 , wherein
the first surface of the first conductor has a groove extending from a side surface of the depression toward a region that does not overlap the pellet when viewed in the first direction.
5 . The semiconductor device according to claim 1 , wherein
when viewed in the first direction, the depression is larger than the pellet, and includes a first region that overlaps the center portion of the pellet and a second region that overlaps the peripheral portion of the pellet and an outer side of the pellet, and
a depth of the depression is deeper in the first region than in the second region.
6 . The semiconductor device according to claim 5 , wherein
the first surface of the first conductor has a projection in a region that overlaps the pellet in the second region when viewed in the first direction.
7 . The semiconductor device according to claim 1 , wherein
the first bonding material and the second bonding material include solder.
8 . The semiconductor device according to claim 7 , wherein
the first bonding material includes spherical nickel.
9 . The semiconductor device according to claim 1 , wherein
in a region that overlaps the depression when viewed in the first direction, a thickness of the first bonding material is 100 μm or greater.
10 . The semiconductor device according to claim 3 , wherein
a height of the projection is less than 100 μm.
11 . The semiconductor device according to claim 6 , wherein
a height of the projection is less than 100 μm.
12 . The semiconductor device according to claim 1 , wherein
the first conductor is larger than the pellet when viewed in the first direction.
13 . The semiconductor device according to claim 1 , wherein
the first conductor is smaller than the pellet when viewed in the first direction.
14 . The semiconductor device according to claim 1 , wherein
the pellet includes a chip of a power semiconductor.
15 . The semiconductor device according to claim 14 , wherein
the pellet includes an insulated gate bipolar transistor.
16 . The semiconductor device according to claim 15 , wherein
the first conductor includes a collector electrode, and
the second conductor includes an emitter electrode.
17 . The semiconductor device according to claim 14 , wherein
the pellet includes a metal-oxide-silicon field-effect transistor using silicon carbide.
18 . The semiconductor device according to claim 17 , wherein
the first conductor includes a drain electrode, and
the second conductor includes a source electrode.