Semiconductor device with a surface of a semiconductor body exposed through an opening in a sealing resin
A semiconductor device includes a conductor, a semiconductor element, and a sealing resin. The conductor has an obverse surface facing in the thickness direction. The semiconductor element includes an element body and a plurality of electrodes connected to the element body and bonded to the obverse surface. The sealing resin covers the semiconductor element. The sealing resin has a top surface facing the same side as the obverse surface in the thickness direction, and an opening penetrating the top surface in the thickness direction. The element body is exposed through the opening.
1 . A semiconductor device comprising:
a conductor having an obverse surface facing in a thickness direction;
a semiconductor element including an element body and a plurality of electrodes, the plurality of electrodes being connected to the element body and bonded to the obverse surface; and
a sealing resin covering the semiconductor element, wherein
the sealing resin has a top surface and an opening, the top surface facing a same side as the obverse surface in the thickness direction, the opening penetrating the top surface in the thickness direction,
the element body includes: a substrate made of a semiconductor material; and a semiconductor layer located closer to the obverse surface than is the substrate in the thickness direction and electrically connected to the plurality of electrodes,
the substrate has a base surface facing the same side as the obverse surface in the thickness direction,
the base surface is exposed through the opening,
the base surface is located closer to the obverse surface than is the top surface in the thickness direction,
the top surface includes an opening edge defining the opening in a manner such that the opening overlaps but extends beyond the base surface as viewed in the thickness direction,
the sealing resin has as an opening surface connected to the opening edge and defining the opening,
the opening surface includes a first section located between the top surface and the obverse surface in the thickness direction and parallel to the top surface, and a second section connected to the first section and the opening edge,
the second section is inclined with respect to both the first section and the top surface,
an area of the opening as viewed in the thickness direction gradually reduces from the top surface toward the base surface,
the first section is flanked by the base surface and the second section in a first direction orthogonal to the thickness direction, and
a dimension of the first section in the first direction is smaller than a dimension of the second section in the thickness direction.
2 . The semiconductor device according to claim 1 , further comprising:
a conductive bonding layer that bonds the obverse surface and the plurality of electrodes to each other,
wherein each of the plurality of electrodes has a pad portion that is in contact with the element body and a columnar portion projecting from the pad portion in the thickness direction, the columnar portion being in contact with the bonding layer.
3 . The semiconductor device according to claim 2 , wherein
the columnar portion of each of the plurality of electrodes has an end surface opposing the obverse surface, and
a side surface connected to the end surface and facing in a direction orthogonal to the thickness direction, and the bonding layer is in contact with the end surface and the side surface.
4 . The semiconductor device according to claim 3 , wherein
the semiconductor element has a surface protective film opposing the obverse surface in the thickness direction and covering the element body,
the end surface of each of the plurality of electrodes is located between the obverse surface and the surface protective film in the thickness direction.
5 . The semiconductor device according to claim 4 , wherein the pad portion and the columnar portion of each of the plurality of electrodes are in contact with the surface protective film.
6 . The semiconductor device according to claim 4 , wherein the columnar portion of each of the plurality of electrodes has a recess that is recessed from the end surface in the thickness direction, and the bonding layer is urged into the recess.
7 . The semiconductor device according to claim 1 , wherein
the conductor includes a plurality of first leads and a plurality of second leads,
the plurality of first leads are elongated in a first direction orthogonal to the thickness direction and spaced apart from each other in a second direction orthogonal to the thickness direction and the first direction,
the plurality of second leads are spaced apart from the plurality of first leads in the second direction,
the semiconductor layer contains a switching circuit and a control circuit electrically connected to the switching circuit,
a first electrode of the plurality of electrodes is electrically connected to the switching circuit and bonded to the obverse surface of one of the plurality of first leads, and
a second electrode of the plurality of electrodes is electrically connected to the control circuit and bonded to the obverse surface of one of the plurality of second leads.
8 . The semiconductor device according to claim 7 , wherein
the sealing resin covers a portion of each of the plurality of first leads and a portion of each of the plurality of second leads,
each of the first leads and each of the second leads have respective reverse surfaces opposite from the obverse surface in the thickness direction, and respective end surfaces connected to the obverse surface and the reverse surfaces and facing in a direction orthogonal to the thickness direction, and
the reverse surface and the end surface of each of the first leads and the reverse surface and the end surface of each of the second leads are exposed from the sealing resin.
9 . A semiconductor device comprising:
a conductor having an obverse surface facing in a thickness direction;
a semiconductor element including an element body and a plurality of electrodes, the plurality of electrodes being connected to the element body and bonded to the obverse surface; and
a sealing resin covering the semiconductor element, wherein
the sealing resin has a top surface and an opening, the top surface facing a same side as the obverse surface in the thickness direction, the opening penetrating the top surface in the thickness direction,
the element body includes: a substrate made of a semiconductor material; and a semiconductor layer located closer to the obverse surface than is the substrate in the thickness direction and electrically connected to the plurality of electrodes,
the substrate has a base surface facing the same side as the obverse surface in the thickness direction,
the base surface is exposed through the opening,
the conductor includes a plurality of first leads and a plurality of second leads,
the plurality of first leads are elongated in a first direction orthogonal to the thickness direction and spaced apart from each other in a second direction orthogonal to the thickness direction and the first direction,
the plurality of second leads are spaced apart from the plurality of first leads in the second direction,
the plurality of first leads and the plurality of second leads each have a reverse surface opposite to the obverse surface in the thickness direction,
the plurality of first leads include an input terminal to which direct voltage is applied,
the input terminal includes a main section elongated in the first direction and a pair of side sections connected to opposite ends of the main section in the first direction,
each of the side sections includes an end surface connected to the obverse surface and the reverse surface of the input terminal, the end surface facing in the first direction,
each of the side sections is formed with a constriction, and
in each of the side sections, the constriction causes a dimension of the end surface in the second direction to be smaller than a dimension of the reverse surface of the main section in the second direction.
10 . The semiconductor device according to claim 9 , wherein
the semiconductor layer contains a switching circuit and a control circuit electrically connected to the switching circuit,
a first electrode of the plurality of electrodes is electrically connected to the switching circuit and bonded to the obverse surface of one of the plurality of first leads, and
a second electrode of the plurality of electrodes is electrically connected to the control circuit and bonded to the obverse surface of one of the plurality of second leads.
11 . The semiconductor device according to claim 9 , wherein the base surface is flush with the top surface.
12 . The semiconductor device according to claim 9 , wherein the base surface is located further away from the obverse surface than is the top surface in the thickness direction.
13 . The semiconductor device according to claim 9 , wherein the base surface is located closer to the obverse surface than is the top surface in the thickness direction.
14 . The semiconductor device according to claim 13 , wherein the top surface includes an opening edge defining the opening in a manner such that the opening overlaps but extends beyond the base surface as viewed in the thickness direction.
15 . The semiconductor device according to claim 14 , wherein the sealing resin has as an opening surface connected to the opening edge and defining the opening, and the opening surface abuts a periphery of the base surface.
16 . The semiconductor device according to claim 15 , wherein the opening surface includes:
a first section located between the top surface and the obverse surface in the thickness direction and parallel to the top surface, and
a second section connected to the first section and the opening edge,
wherein further the first section abuts the periphery of the base surface.
17 . The semiconductor device according to claim 16 , wherein the second section is inclined with respect to both the first section and the top surface.
18 . The semiconductor device according to claim 17 , wherein an area of the opening as viewed in the thickness direction gradually reduces from the top surface toward the obverse surface.
19 . The semiconductor device according to claim 9 , further comprising:
a conductive bonding layer that bonds the obverse surface and the plurality of electrodes to each other,
wherein each of the plurality of electrodes has a pad portion that is in contact with the element body and a columnar portion projecting from the pad portion in the thickness direction, the columnar portion being in contact with the bonding layer.
20 . The semiconductor device according to claim 19 , wherein
the columnar portion of each of the plurality of electrodes has an end surface opposing the obverse surface, and a side surface connected to the end surface and facing in a direction orthogonal to the thickness direction, and
the bonding layer is in contact with the end surface and the side surface.