Semiconductor device
According to one embodiment, there is provided a semiconductor device including a chip, a drain electrode arranged on a first surface of the chip, a source electrode arranged on a second surface provided on a back side of the first surface of the chip and having a front surface on a device bottom surface, a gate electrode having a front surface on the device bottom surface, and a wire connecting a first region of the gate electrode to a second region on the second surface of the chip.
1 . A semiconductor device comprising:
a chip;
a drain electrode arranged on a first surface of the chip;
a source electrode arranged on a second surface provided on a back side of the first surface of the chip and having a front surface on a device bottom surface;
a gate electrode having a front surface on the device bottom surface; and
a wire connecting a first region of the gate electrode to a second region on the second surface of the chip, wherein
the drain electrode and the gate electrode are formed with a single lead frame with a dented head, and
the first region of the gate electrode is located at an inner surface of the dented head.
2 . The semiconductor device according to claim 1 , wherein the drain electrode has a flat plate portion on a side of the second surface of the chip, and the gate electrode has a flat plate portion at the same height as the flat plate portion of the drain electrode.
3 . The semiconductor device according to claim 2 , wherein the gate electrode has the first region in a flat plate portion of the gate electrode, the first region being connected to the wire.
4 . The semiconductor device according to claim 1 , wherein the source electrode and the drain electrode are bonded to the chip with solder.
5 . The semiconductor device according to claim 1 , wherein the source electrode and the drain electrode are bonded to the chip with a pressure-sintered material.
6 . The semiconductor device according to claim 1 , wherein the semiconductor device is sealed in a package of a source-down structure in which the source electrode is provided on a bottom surface of the package.
7 . A semiconductor device comprising:
a chip;
a drain electrode arranged on a first surface of the chip;
a source electrode arranged on a second surface provided on a back side of the first surface of the chip and having a connection portion and an external exposed portion, the connection portion being connected to the second surface, the external exposed portion being exposed on a side opposite to the connection portion;
a gate electrode being formed by bending a plate-like metal member; and
a wire connecting a first region of the gate electrode to a second region on the second surface of the chip, wherein
the drain electrode and the gate electrode are formed with a single lead frame with a dented head, and
the first region of the gate electrode is located at an inner surface of the dented head.
8 . The semiconductor device according to claim 7 , wherein when viewed from a direction perpendicular to the second surface of the chip, the external exposed portion of the source electrode has a region that overlaps with the second surface of the chip.