IP Library Granted Patent US 12708003
Granted Patent B2
US 12708003 · App. 18/442,135 · Granted Aug 11, 2026

Substrate

Inventors: Alexander Höhn (Soest, DE); Charles Rimbert-Riviere (Soest, DE)
Assignee: Infineon Technologies AG
H10W70/65
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Quick Facts
Patent No.
US 12708003
App. No.
18/442,135
Granted
Aug 11, 2026
Kind
B2
Abstract

A substrate includes a dielectric insulation layer, a first metallization layer arranged on a first surface of the dielectric insulation layer, and a second metallization layer arranged on a second, opposite surface of the dielectric insulation layer. The dielectric insulation layer includes an outer edge extending between the first and second surfaces. The outer edge includes first sections and second sections. Along each first section, a difference between a first distance and a second distance has a first value. Along each second section, the difference between the first and second distances has a second value that is different from the first value. The first distance is a distance between the outer edge of the dielectric insulation layer and an outer edge of the first metallization layer. The second distance is a distance between the outer edge of the dielectric insulation layer and an outer edge of the second metallization layer.

Claims (22)

1 . A substrate, comprising:

a dielectric insulation layer;

a first metallization layer arranged on a first surface of the dielectric insulation layer; and

a second metallization layer arranged on a second surface of the dielectric insulation layer, opposite the first surface,

wherein the dielectric insulation layer comprises an outer edge extending between the first surface and the second surface,

wherein the outer edge of the dielectric insulation layer comprises a plurality of first sections and a plurality of second sections,

wherein along each of the plurality of first sections, a difference between a first distance and a second distance has a first value,

wherein along each of the plurality of second sections, the difference between the first distance and the second distance has a second value that is different from the first value, and

wherein the first distance is a distance between the outer edge of the dielectric insulation layer and an outer edge of the first metallization layer, and the second distance is a distance between the outer edge of the dielectric insulation layer and an outer edge of the second metallization layer.

2 . The substrate of claim 1 , wherein the first sections and the second sections are arranged alternatingly along the circumference of the dielectric insulation layer.

3 . The substrate of claim 1 , wherein the dielectric insulation layer has a rectangular shape, and each of the second sections is arranged at a different corner of the dielectric insulation layer.

4 . The substrate of claim 3 , wherein each of the second sections extends from the respective corner in a first horizontal direction and in a second horizontal direction that is perpendicular to the first horizontal direction.

5 . The substrate of claim 4 , wherein a length of each of the second sections in the first horizontal direction is less than 15 mm, and wherein a length of each of the second sections in the second horizontal direction is less than 15 mm.

6 . The substrate of claim 5 , wherein the length of each of the second sections in the first horizontal direction is less than 5 mm, and wherein the length of each of the second sections in the second horizontal direction is less than 5 mm.

7 . The substrate of claim 6 , wherein the length of each of the second sections in the first horizontal direction is less than 3 mm, and wherein the length of each of the second sections in the second horizontal direction is less than 3 mm.

8 . The substrate of claim 5 , wherein the length of each of the second sections in the first horizontal direction equals the length of each of the second sections in the second horizontal direction.

9 . The substrate of claim 1 , wherein the first value is between 0.2 mm and 1.2 mm.

10 . The substrate of claim 1 , wherein the first value is greater than the second value.

11 . The substrate of claim 10 , wherein the second value is 50% of the first value or less.

12 . The substrate of claim 11 , wherein the second value is zero.

13 . The substrate of claim 1 , wherein the dielectric insulation layer further comprises a plurality of third sections, wherein each third section is arranged between a first section and a second section, and wherein along each of the third sections, the difference gradually transitions from the first value to the second value.

14 . The substrate of claim 13 , wherein a length of each of the third sections is between 0.1 mm and 5 mm.