Semiconductor package with organic interposer

1 . A semiconductor package comprising:

a package substrate;

an organic interposer on the package substrate, the organic interposer comprising a plurality of organic insulating layers comprising an organic compound;

at least two semiconductor chips on the organic interposer; and

a mold, on an upper surface of the organic interposer, surrounding the at least two semiconductor chips,

wherein the organic interposer comprises a plurality of first vias penetrating the plurality of organic insulating layers and connecting a first upper pad with a lower pad,

wherein the plurality of first vias have a width that narrows in a direction from the lower pad to the first upper pad, and

wherein an upper surface of at least one of the plurality of first vias is aligned with a lower surface of the mold.

2 . The semiconductor package of claim 1 , wherein the organic interposer has a thickness equal to or smaller than about 50 μm.

3 . The semiconductor package of claim 1 , wherein the organic interposer comprises:

a plurality of redistribution layers in each of the plurality of organic insulating layers; and

a plurality of second vias connecting at least two of the plurality of redistribution layers inside the plurality of organic insulating layers.

4 . The semiconductor package of claim 3 , wherein the plurality of first vias have a diameter of about 30 μm to about 60 μm.

5 . The semiconductor package of claim 3 , wherein the plurality of redistribution layers have a line width of about 1/1 μm to about 3/3 μm.

6 . The semiconductor package of claim 3 , wherein the plurality of second vias have a diameter of about 5 μm to about 15 μm, and

wherein the plurality of second vias have a width that narrows toward the lower pad.

7 . The semiconductor package of claim 1 , wherein the mold is on a side wall of the at least two semiconductor chips on the upper surface of the organic interposer, and

wherein the mold exposes an upper surface of the at least two semiconductor chips.

8 . The semiconductor package of claim 1 , further comprising an under fill surrounding a plurality of lower pads and a plurality of lower bumps, the plurality of lower pads and the plurality of lower bumps being on a lower surface of the organic interposer between the organic interposer and the package substrate.

9 . A semiconductor package comprising:

a package substrate;

an organic interposer on the package substrate, the organic interposer comprising a stacked structure comprising a first organic insulating layer, a second organic insulating layer, a third organic insulating layer, and a fourth organic insulating layer comprising an organic compound;

a first semiconductor chip and a second semiconductor chip on the organic interposer; and

a mold surrounding the first semiconductor chip and the second semiconductor chip from an upper surface of the organic interposer,

wherein the organic interposer further comprises:

a plurality of first upper pads on an upper surface of the fourth organic insulating layer,

a plurality of lower pads on a lower surface of the first organic insulating layer, and,

a plurality of first vias penetrating the first organic insulating layer, the second organic insulating layer, the third organic insulating layer, and the fourth organic insulating layer and connecting the plurality of first upper pads with the plurality of lower pads, and

wherein the plurality of first vias have a width that narrows in a direction from the plurality of first upper pads to the plurality of lower pads.

10 . The semiconductor package of claim 9 , wherein the organic interposer further comprises:

a plurality of redistribution layers in each of the first organic insulating layer, the second organic insulating layer, the third organic insulating layer, and the fourth organic insulating layer; and

a plurality of second vias connecting at least two of the plurality of redistribution layers inside the first organic insulating layer, the second organic insulating layer, the third organic insulating layer, and the fourth organic insulating layer.

11 . The semiconductor package of claim 10 , wherein the organic interposer has a thickness equal to or smaller than about 50 μm.

12 . The semiconductor package of claim 10 , wherein the plurality of first vias have a diameter of about 30 μm to about 60 μm.

13 . The semiconductor package of claim 10 , wherein the plurality of redistribution layers have a line width of about 1/1 μm to about 3/3 μm.

14 . The semiconductor package of claim 10 , wherein the plurality of second vias have a diameter of about 5 μm to about 15 μm, and

wherein the plurality of second vias have a width that narrows toward the plurality of lower pads.

15 . The semiconductor package of claim 10 , wherein a number of the plurality of second vias connecting at least two of the plurality of redistribution layers provide an electrical connection between the first semiconductor chip and the second semiconductor chip.

16 . The semiconductor package of claim 9 , wherein the mold is on a side wall of at least one of the first semiconductor chip and the second semiconductor chip on the upper surface of the organic interposer, and

wherein the mold exposes an upper surface of at least one of the first semiconductor chip and the second semiconductor chip.

17 . The semiconductor package of claim 9 , further comprising an under fill surrounding the plurality of lower pads and a plurality of lower bumps, the plurality of lower pads and the plurality of lower bumps being on a lower surface of the organic interposer between the organic interposer and the package substrate.

18 . The semiconductor package of claim 9 , wherein at least one of the first semiconductor chip and the second semiconductor chip comprises a memory, logic, a micro-processor, an analog element, a digital signal processor, and a system-on-chip.

19 . A semiconductor package comprising:

a package substrate;

an organic interposer on the package substrate, the organic interposer comprising a stacked structure comprising a first organic insulating layer, a second organic insulating layer, a third organic insulating layer, and a fourth organic insulating layer comprising an organic compound;

a first semiconductor chip and a second semiconductor chip on the organic interposer;

a final mold surrounding the first semiconductor chip and the second semiconductor chip from an upper surface of the organic interposer;

a heat dissipation member on first upper surfaces and first upper portions of outer walls of the first semiconductor chip and on second upper surfaces and second upper portions of the second semiconductor chip, the heat dissipation member abutting the final mold; and

an under fill surrounding a plurality of lower pads and a plurality of lower bumps, the plurality of lower pads and the plurality of lower bumps being on a lower surface of the organic interposer between the organic interposer and the package substrate,

wherein the organic interposer further comprises:

a plurality of first vias penetrating from the first organic insulating layer to the fourth organic insulating layer, and connecting first upper pads on an upper surface of the fourth organic insulating layer and lower pads on a lower surface of the first organic insulating layer;

a plurality of redistribution layers in each of the first organic insulating layer, the second organic insulating layer, the third organic insulating layer, and the fourth organic insulating layer; and

a plurality of second vias connecting at least two of the plurality of redistribution layers inside the first organic insulating layer, the second organic insulating layer, the third organic insulating layer, and the fourth organic insulating layer,

wherein the plurality of first vias have a width that widens in a direction from the first upper pads to the lower pads, and

wherein the heat dissipation member directly contacts an outer wall of the first semiconductor chip, an outer wall of the second semiconductor chip and an upper surface of the final mold.

20 . The semiconductor package of claim 19 , wherein the plurality of second vias have a diameter of about 5 μm to about 15 μm, and

wherein the plurality of second vias have a width that narrows toward the plurality of lower pads.