IP Library › Granted Patent US 12708014
Granted Patent B2
US 12708014 · App. 17/957,355 · Granted Aug 11, 2026

Singulation of integrated circuit package substrates with glass cores

Inventors: Hanyu Song (Chandler, AZ); Vinith Bejugam (Chandler, AZ); Yonggang Li (Chandler, AZ); Gang Duan (Chandler, AZ); Aaron Garelick (Chandler, AZ)
Assignee: Intel Corporation
H10W70/692H10W70/05H10W70/68H10W70/685H10W99/00H10W74/15
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Quick Facts
Patent No.
US 12708014
App. No.
17/957,355
Granted
Aug 11, 2026
Kind
B2
Abstract

An integrated circuit (IC) device comprises a substrate comprising a glass core. The glass core includes a first surface, a second surface opposite the first surface, a sidewall between the first surface and the second surface, and a corner region where the first sidewall meets the first surface. A first build-up layer is on at least the first surface. In some embodiments, the corner region comprises a recess and a dielectric material within the recess. In other embodiments, the corner region comprises a first compressive stress and the glass core comprises a second region. The second region comprises a second compressive stress. The first compressive stress is greater than the second compressive stress.

Claims (35)

1 . An integrated circuit (IC) device comprising:

a substrate comprising a glass core, the glass core comprising:

a first surface;

a second surface opposite the first surface;

a first sidewall between the first surface and the second surface;

a corner region where the first sidewall meets the first surface, wherein the corner region comprises a portion of the first sidewall; and

a second region on the first sidewall, wherein the second region is spaced away from the first and second surfaces;

a first build-up layer on at least the first surface;

wherein the corner region comprises a first compressive stress, the second region comprises a second compressive stress, and the first compressive stress is greater than the second compressive stress.

2 . The IC device of claim 1 , wherein the corner region comprises a recess and a dielectric material within the recess.

3 . The IC device of claim 2 , wherein the recess comprises a third surface that is other than perpendicular to either the first surface or the first sidewall.

4 . The IC device of claim 3 , wherein the third surface is planar or curved.

5 . The IC device of claim 1 , wherein the corner region comprises a recess open to the first sidewall and a dielectric material within the recess, and the recess comprises a third sidewall approximately parallel with the first sidewall, and a fourth sidewall approximately parallel with the first surface.

6 . The IC device of claim 1 ,

wherein the corner region comprises a first porosity percentage, the second region comprises a second porosity percentage, and the first porosity percentage is greater than the second porosity percentage.

7 . The IC device of claim 1 , wherein the corner region comprises a first refractive index, the second region comprises a second refractive index, and the first refractive index is different from the second refractive index.

8 . The IC device of claim 1 , wherein the corner region comprises a first photoelasticity parameter value, the second region comprises a second photoelasticity parameter value, and the first photoelasticity parameter value is different from the second photoelasticity parameter value.

9 . The IC device of claim 1 , wherein the first sidewall further comprises an artifact of a mechanical sawing process.

10 . The IC device of claim 1 , wherein the first build-up layer comprises a metallization layer and a dielectric material layer.

11 . The IC device of claim 1 , wherein the corner region spans a distance from the first sidewall in a direction parallel to the first surface, and the distance is between about 25 and 75 microns.

12 . The IC device of claim 1 , wherein the glass core comprises a thickness of between 200 and 1600 microns, the corner region spans a distance from the first surface in a direction parallel to the first sidewall, and the distance is between about 15 and 25 percent of the thickness of the glass core.

13 . The IC device of claim 1 , further comprising a second build-up layer on the second surface, the second build-up layer comprising a metallization layer and a dielectric material layer.

14 . An integrated circuit (IC) device comprising:

a substrate comprising glass core, the glass core comprising:

a first surface;

a second surface opposite the first surface;

a first sidewall between the first surface and the second surface;

a corner region where the first sidewall meets the first surface; and

a second region;

a first build-up layer on at least the first surface; and

an IC die coupled with the first build-up layer;

wherein the corner region comprises a first porosity percentage, the second region comprises a second porosity percentage, and the first porosity percentage is greater than the second porosity percentage.

15 . The IC device of claim 14 , wherein the corner region comprises recess having a third surface that is other than perpendicular to either the first surface or the first sidewall.

16 . The IC device of claim 14 ,

wherein the corner region comprises a first compressive stress, the second region comprises a second compressive stress, and the first compressive stress is greater than the second compressive stress.