Semiconductor device and method of die attach with adhesive layer containing graphene-coated core
A semiconductor device has a substrate and an adhesive layer with a graphene core shell deposited over a surface of the substrate. An electrical component is affixed to the substrate with the adhesive layer. A bond wire is connected between the electrical component and substrate. The graphene core shell has a copper core and graphene coating over the copper core. The graphene coated core shell is embedded within a matrix. The graphene core shells within the adhesive layer to form a thermal path. The matrix can be a thermoset material or polymer or composite epoxy type matrix. The graphene core shell is embedded within the thermoset material or polymer or composite epoxy type matrix. The adhesive layer with graphene core shell is useful for die attachment. The graphene core adhesive layer provides exceptional heat dissipation, shock absorption, and vibration dampening.
1 . A semiconductor device, comprising:
a substrate;
an adhesive layer including a plurality of graphene core shells deposited over a surface of the substrate; and
an electrical component affixed to the substrate with the adhesive layer, wherein the graphene core shells each are interconnected as one graphene core shell of the plurality of graphene core shells contacts another graphene core shell of the plurality of graphene core shells within the adhesive layer to form a continuous thermal conduction path between the surface of the substrate and electrical component.
2 . The semiconductor device of claim 1 , wherein the graphene core shell includes a copper core.
3 . The semiconductor device of claim 2 , wherein the graphene core shell further includes a graphene coating formed over the copper core.
4 . The semiconductor device of claim 1 , wherein the adhesive layer further includes a matrix to embed the graphene core shell.
5 . The semiconductor device of claim 1 , wherein the adhesive layer includes thermoset material or polymer or composite epoxy type matrix and the graphene core shell is embedded within the thermoset material or polymer or composite epoxy type matrix.
6 . The semiconductor device of claim 1 , further including:
a first graphene core shell of the plurality of graphene core shells; and
a second graphene core shell of the plurality of graphene core shells, wherein the second graphene core shell contacts the first graphene core shell to form a portion of the continuous thermal conduction path.
7 . A semiconductor device, comprising:
a substrate;
a graphene core adhesive layer deposited on a surface of the substrate; and
an electrical component affixed to the substrate with the graphene core adhesive layer,
wherein the graphene core adhesive layer includes a plurality of graphene core shells each interconnected as each graphene core shell of the plurality of graphene core shells contacts another graphene core shell of the plurality of graphene core shells within the graphene core adhesive layer to form a continuous conduction path between the surface of the substrate and electrical component.
8 . The semiconductor device of claim 7 , wherein the graphene core adhesive layer includes a copper core.
9 . The semiconductor device of claim 8 , wherein the graphene core adhesive layer further includes a graphene coating formed over the copper core.
10 . The semiconductor device of claim 9 , wherein the graphene core adhesive layer further includes a matrix to embed the graphene coated copper core.
11 . The semiconductor device of claim 7 , wherein the adhesive layer includes thermoset material or polymer or composite epoxy type matrix and the graphene core shell is embedded within the thermoset material or polymer or composite epoxy type matrix.
12 . The semiconductor device of claim 7 , further including a bond wire connected between the electrical component and substrate.
13 . The semiconductor device of claim 7 , further including:
a first graphene core shell of the plurality of graphene core shells; and
a second graphene core shell of the plurality of graphene core shells, wherein the second graphene core shell contacts the first graphene core shell to form a portion of the continuous conduction path.
14 . A method of making a semiconductor device, comprising:
providing a substrate;
depositing an adhesive layer including a plurality of graphene core shells over a surface of the substrate; and
affixing an electrical component to the substrate with the adhesive layer, wherein the graphene core shells each are interconnected within the adhesive layer to form a continuous conduction path between the surface of the substrate and electrical component.
15 . The method of claim 14 , wherein the graphene core shell includes providing a copper core.
16 . The method of claim 15 , wherein the graphene core adhesive layer further includes forming a graphene coating over the copper core.
17 . The method of claim 16 , wherein the adhesive layer further includes embedding the graphene coated copper core in a matrix.
18 . The method of claim 14 , further including providing a bond wire connected between the electrical component and substrate.
19 . The method of claim 14 , further including:
providing a first graphene core shell of the plurality of graphene core shells; and
providing a second graphene core shell of the plurality of graphene core shells, wherein the second graphene core shell contacts the first graphene core shell to form a portion of the continuous conduction path.
20 . A method of making a semiconductor device, comprising:
providing a substrate;
depositing a graphene core adhesive layer over a surface of the substrate; and
affixing an electrical component to the substrate with the graphene core adhesive layer,
wherein the graphene core adhesive layer includes a plurality of graphene core shells each interconnected within the graphene core adhesive layer to form a continuous conduction path between the surface of the substrate and electrical component.
21 . The method of claim 20 , wherein the graphene core adhesive layer includes providing a copper core.
22 . The method of claim 21 , wherein the graphene core adhesive layer further includes forming a graphene coating over the copper core.
23 . The method of claim 22 , wherein the graphene core adhesive layer further includes embedding the graphene coated copper core in a matrix.
24 . The method of claim 20 , further including providing a bond wire connected between the electrical component and substrate.
25 . The method of claim 20 , further including:
providing a first graphene core shell of the plurality of graphene core shells; and
providing a second graphene core shell of the plurality of graphene core shells, wherein the second graphene core shell contacts the first graphene core shell to form a portion of the continuous conduction path.