Method of manufacturing 3DIC package comprising a plurality of discrete device dies bonding to a wafer
A method includes bonding a first device die to a second device die through face-to-face bonding, wherein the second device die is in a device wafer, forming a gap-filling region to encircle the first device die, performing a backside-grinding process on the device wafer to reveal a through-via in the second device die, and forming a redistribution structure on the backside of the device wafer. The redistribution structure is electrically connected to the first device die through the through-via in the second device die. A supporting substrate is bonded to the first device die.
1 . A method comprising:
bonding a first device die to a second device die through face-to-face bonding, wherein the second device die is in a device wafer;
forming a gap-filling region to encircle the first device die;
performing a backside-grinding process on the device wafer to reveal a first through-via in the second device die;
forming a redistribution structure on a backside of the device wafer, wherein the redistribution structure is electrically connected to the first device die through the first through-via in the second device die;
bonding a supporting substrate to the first device die; and
performing a sawing process to saw the device wafer into a plurality of packages, wherein the first device die, the second device die, and a piece of the supporting substrate are comprised in a discrete package among the plurality of packages.
2 . The method of claim 1 , wherein the first device die comprises a semiconductor substrate, and the first device die is free from through-vias in the semiconductor substrate.
3 . The method of claim 1 , wherein the supporting substrate comprises a semiconductor substrate, and the supporting substrate is free from active devices and passive devices therein.
4 . The method of claim 1 , wherein the supporting substrate is comprised in a wafer, and the wafer is bonded to the first device die in a wafer-to-wafer bonding process.
5 . The method of claim 1 , wherein the discrete package further comprises a plurality of device dies overlapping the second device die, and the plurality of device dies are arranged as an array.
6 . The method of claim 1 , wherein the second device die further comprises a second through-via, wherein the first through-via is overlapped by the first device die, and the second through-via is overlapped by the gap-filling region.
7 . The method of claim 1 , wherein the bonding the first device die to the second device die is performed through both of dielectric-to-dielectric bonding and metal-to-metal bonding.
8 . The method of claim 1 , wherein the second device die comprises active devices.
9 . The method of claim 1 , wherein the second device die comprises passive devices, and the second device die is free from active devices.
10 . The method of claim 1 , wherein the supporting substrate comprises a metal plate.
11 . A method comprising:
forming a first device die comprising:
a first semiconductor substrate; and
first active devices on a first front surface of the first semiconductor substrate;
bonding a second device die to the first device die, wherein the second device die comprises:
a second semiconductor substrate;
second active devices on a second front surface of the second semiconductor substrate, wherein the first front surface and the second front surface face each other;
a first through-via penetrating through the second semiconductor substrate; and
an interconnect structure on a backside of the second device die; and
attaching a supporting substrate to the first device die, wherein at a time after the supporting substrate is attached, the first through-via comprises a wider end and a narrower end opposite to the wider end, and wherein the wider end is between the narrower end and the supporting substrate.
12 . The method of claim 11 , wherein the supporting substrate and the second device die are bonded to opposite sides of the first device die.
13 . The method of claim 11 , wherein the supporting substrate is free from active devices and passive devices therein.
14 . The method of claim 13 , wherein the supporting substrate comprises a silicon substrate.
15 . The method of claim 11 , further comprising:
dispensing a gap-filling dielectric material encircling the first device die, wherein the second device die comprises a second through-via penetrating through the second semiconductor substrate, and wherein the first device die overlaps the first through-via, and the gap-filling dielectric material overlaps the second through-via.
16 . A method comprising:
bonding a supporting substrate over a first device die, wherein the supporting substrate is free from active devices and passive devices therein;
attaching a metal feature over the supporting substrate through a thermal interface material, wherein the thermal interface material is in physical contact with the metal feature and a semiconductor substrate of the supporting substrate; and
bonding a second device die underlying the first device die, wherein the second device die comprises:
a through-via therein; and
a backside interconnect structure underlying and connected to the through-via.
17 . The method of claim 16 , wherein the metal feature comprises a metal cap or a heat sink.
18 . The method of claim 16 , wherein the through-via comprises a wider end and a narrower end opposite the wider end, and wherein the wider end is between the narrower end and the supporting substrate.
19 . The method of claim 16 , further comprising encapsulating the first device die in a dielectric gap-filling material, wherein the through-via is overlapped by the first device die, and wherein the second device die further comprises an additional through-via overlapped by the dielectric gap-filling material.
20 . The method of claim 16 , further comprising performing a sawing process to saw a device wafer that comprises the second device die into a plurality of packages, wherein the first device die, the second device die, and a piece of the supporting substrate are comprised in a discrete package of the plurality of packages.