Interconnect structure for front-to-front stacked chips
Interconnect structures for front-to-front stacked chips/dies and methods of fabrication thereof are disclosed herein. An exemplary system on integrated circuit (SoIC) includes a first die that is front-to-front bonded with a second die, for example, by bonding a first topmost metallization layer of a first frontside multilayer interconnect of the first die to a second topmost metallization layer of a second frontside multilayer interconnect of the second die. A through via extends partially through the first frontside multilayer interconnect of the first die, through a device layer of the first die, through a backside power rail of the first die, and through a carrier substrate. The backside power rail is between the carrier substrate and the device layer, and the backside power rail may be a portion of a backside multilayer interconnect of the first die. The through via may be connected to a redistribution layer (RDL) structure.
1 . A stacked chip structure comprising:
a first chip having a first device substrate, a first frontside interconnect structure, and a backside interconnect structure, wherein the first device substrate is disposed between the first frontside interconnect structure and the backside interconnect structure;
a second chip having a second device substrate and a second frontside interconnect structure disposed over the second device substrate, wherein the second frontside interconnect structure is attached to the first frontside interconnect structure;
a carrier substrate attached to the backside interconnect structure;
a through via disposed in the first frontside interconnect structure, wherein the through via extends from the first frontside interconnect structure through the first device substrate, the backside interconnect structure, and the carrier substrate; and
a guard ring around the through via, wherein the guard ring extends through the first device substrate and the backside interconnect structure.
2 . The stacked chip structure of claim 1 , wherein the through via is connected to the first frontside interconnect structure and the second frontside interconnect structure.
3 . The stacked chip structure of claim 1 , wherein first metal lines of a first topmost metal level of the first frontside interconnect structure are bonded to respective second metal lines of a second topmost metal level of the second frontside interconnect structure.
4 . The stacked chip structure of claim 1 , wherein:
the guard ring is not disposed in the carrier substrate; and
the guard ring is not around a portion of the through via in the carrier substrate.
5 . The stacked chip structure of claim 1 , wherein:
the through via includes an electrically conductive core that extends from the first frontside interconnect structure through the first device substrate, the backside interconnect structure, and the carrier substrate without interruption; and
the through via includes a barrier that wraps the electrically conductive core.
6 . The stacked chip structure of claim 1 , wherein:
the through via includes an electrically conductive core having a first portion and a second portion, wherein the first portion extends from the first frontside interconnect structure through the first device substrate and the backside interconnect structure, and the second portion extends through the carrier substrate; and
the through via includes a first barrier that wraps the first portion and a second barrier that wraps the second portion.
7 . The stacked chip structure of claim 1 , further comprising a redistribution layer (RDL) structure attached to the carrier substrate, wherein the through via is connected to an electrically conductive portion of the RDL structure.
8 . The stacked chip structure of claim 1 , wherein the backside interconnect structure is a power delivery network (PDN).
9 . The stacked chip structure of claim 1 , wherein the first chip and the second chip are a portion of a system on integrated circuit (SoIC).
10 . An integrated circuit (IC) package comprising:
a system on integrated circuit (SoIC) having a first die that is face-to-face bonded with a second die, wherein a first topmost metallization layer of a first frontside multilayer interconnect of the first die is bonded to a second topmost metallization layer of a second frontside multilayer interconnect of the second die; and
a through via that extends partially through the first frontside multilayer interconnect, through a device layer of the first die, through a backside power rail of the first die, and through a carrier substrate to a redistribution layer (RDL) structure, wherein the backside power rail is between the carrier substrate and the device layer, and further wherein the through via includes an electrically conductive core wrapped by a barrier layer, wherein the barrier layer is between the electrically conductive core and the RDL structure.
11 . The IC package of claim 10 , wherein each of the first topmost metallization layer and the second topmost metallization layer has a bonding pitch that is less than about 0.5 Å.
12 . The IC package of claim 10 , further comprising a guard ring around the through via, wherein the guard ring is disposed in the first frontside multilayer interconnect and the device layer of the first die.
13 . The IC package of claim 12 , wherein a length of the through via is greater than a length of the guard ring.
14 . The IC package of claim 10 , wherein the through via is electrically connected to the second frontside multilayer interconnect of the second die.
15 . The IC package of claim 10 , wherein a first number of levels of the first frontside multilayer interconnect of the first die is greater than a second number of levels of the second frontside multilayer interconnect of the second die.
16 . The IC package of claim 10 , wherein the backside power rail is formed directly on a backside of a semiconductor substrate of the device layer.
17 . A method comprising:
directly bonding a first topmost metallization layer of a first frontside multilayer interconnect of a first chip to a second topmost metallization layer of a second frontside multilayer interconnect of a second chip;
bonding a carrier substrate to a backside multilayer interconnect of the first chip, wherein a device layer of the first chip is between the backside multilayer interconnect of the first chip and the first frontside multilayer interconnect of the first chip; and
forming a through via that extends partially through the first frontside multilayer interconnect, through the device layer, through the backside multilayer interconnect, and through the carrier substrate, wherein the through via is formed by a frontside through via process that includes forming the through via after bonding the carrier substrate to the backside multilayer interconnect of the first chip.
18 . The method of claim 17 , wherein the forming the through via includes removing a portion of the carrier substrate to expose the through via.
19 . The method of claim 17 , wherein the through via is formed by a backside through via process that includes:
forming a first portion of the through via before bonding the carrier substrate to the backside multilayer interconnect of the first chip; and
forming a second portion of the through via after bonding the carrier substrate to the backside multilayer interconnect of the first chip.
20 . The method of claim 17 , further comprising forming a redistribution layer (RDL) structure over the carrier substrate, wherein the through via is connected to an electrically conductive portion of the RDL structure.