Semiconductor package and method
A semiconductor package with two interposers, and the method of forming the same are provided. The semiconductor package may include a first interposer, a first semiconductor die on the first interposer, a second interposer on the first semiconductor die, and a second semiconductor die on the second interposer. The second interposer may be between the first semiconductor die and the second semiconductor die. The first semiconductor die may be bonded to the first interposer by metal-to-metal bonding and dielectric-to-dielectric bonding. The second semiconductor die may be bonded to the second interposer by metal-to-metal bonding and dielectric-to-dielectric bonding.
1 . A semiconductor package comprising:
a first interposer;
a first semiconductor die comprising a first substrate and a first bonding layer on a first side of the first substrate, wherein a plurality of first bonding pads are disposed in the first bonding layer, and wherein the first bonding layer and the plurality of first bonding pads are bonded to the first interposer by metal-to-metal bonding and dielectric-to-dielectric bonding;
a second interposer on a second side of the first substrate, the second side of the first substrate being opposite to the first side of the first substrate;
a second semiconductor die comprising a second substrate and a second bonding layer on a first side of the second substrate, wherein a plurality of second bonding pads are disposed in the second bonding layer, wherein the second bonding layer and the plurality of second bonding pads are bonded to the second interposer by metal-to-metal bonding and dielectric-to-dielectric bonding, and wherein the second interposer is between the first semiconductor die and the second semiconductor die;
a first dielectric layer contacting a second side of the second substrate, the second side of the second substrate being opposite to the first side of the second substrate;
a second dielectric layer bonded to the first dielectric layer by dielectric-to-dielectric bonding; and
a semiconductor layer contacting the second dielectric layer.
2 . The semiconductor package of claim 1 , further comprising a first encapsulant surrounding the first semiconductor die and a second encapsulant surrounding the second semiconductor die.
3 . The semiconductor package of claim 2 , wherein the first encapsulant and the second encapsulant each comprises an oxide.
4 . The semiconductor package of claim 2 , wherein the first encapsulant comprises a molding compound and the second encapsulant comprises an oxide.
5 . The semiconductor package of claim 2 , wherein the first encapsulant comprises an oxide and the second encapsulant comprises a molding compound.
6 . The semiconductor package of claim 2 , wherein the first encapsulant and the second encapsulant each comprises a molding compound.
7 . The semiconductor package of claim 1 , wherein the second semiconductor die has a larger thickness than the first semiconductor die, wherein the first interposer is spaced apart from the second interposer by a first vertical distance, wherein the second interposer is spaced apart from the first dielectric layer by a second vertical distance, and wherein the second vertical distance is larger than the first vertical distance.
8 . The semiconductor package of claim 1 , further comprising an integrated passive device on the first interposer, wherein the first interposer is between the first semiconductor die and the integrated passive device.
9 . A semiconductor package comprising:
a package substrate;
a first interposer, wherein a first side of the first interposer is bonded to the package substrate;
a first semiconductor die bonded to a second side of the first interposer, the second side of the first interposer being opposite to the first side of the first interposer, wherein the first semiconductor die is bonded to the first interposer by metal-to-metal bonding and dielectric-to-dielectric bonding;
a first encapsulant along sidewalls of the first semiconductor die;
a second interposer, wherein a first side of the second interposer is in contact with the first semiconductor die and the first encapsulant, and wherein the first semiconductor die is between the first interposer and the second interposer;
a second semiconductor die bonded to a second side of the second interposer, the second side of the second interposer being opposite to the first side of the second interposer, wherein the second semiconductor die is bonded to the second interposer by metal-to-metal bonding and dielectric-to-dielectric bonding;
a second encapsulant along sidewalls of the second semiconductor die; and
a semiconductor layer on the second semiconductor die and the second encapsulant, wherein the semiconductor layer is a single-material layer.
10 . The semiconductor package of claim 9 , wherein the first encapsulant and the second encapsulant comprise a same inorganic dielectric material.
11 . The semiconductor package of claim 9 , wherein the first encapsulant comprises an inorganic dielectric material and the second encapsulant comprises an organic dielectric material.
12 . The semiconductor package of claim 9 , further comprising a bridge die beside the first semiconductor die, wherein the bridge die is between the first interposer and the second interposer, and wherein the bridge die is electrically connected to the first semiconductor die, the second semiconductor die, the first interposer, and the second interposer.
13 . The semiconductor package of claim 9 , further comprising an integrated passive device on the first side of the first interposer.
14 . A method of manufacturing a semiconductor package, the method comprising:
forming a first interposer on a first carrier;
bonding a first semiconductor die to a first side of the first interposer by metal-to-metal bonding and dielectric-to-dielectric bonding, wherein an active side of the first semiconductor die faces the first interposer;
forming a first encapsulant along sidewalls of the first semiconductor die;
forming a second interposer on the first semiconductor die and the first encapsulant, wherein the first encapsulant is between the first interposer and the second interposer;
bonding a second semiconductor die to the second interposer by metal-to-metal bonding and dielectric-to-dielectric bonding, and wherein an active side of the second semiconductor die faces the second interposer, wherein the second interposer is between the first semiconductor die and the second semiconductor die;
forming a second encapsulant along sidewalls of the second semiconductor die; and
bonding a second carrier over the second semiconductor die and the second encapsulant by a first dielectric layer and a second dielectric layer, wherein the first dielectric layer and the second dielectric layer are between the second carrier and the second semiconductor die, and wherein the first dielectric layer and the second dielectric layer are bonded by dielectric-to-dielectric bonding.
15 . The method of claim 14 , further comprising:
removing the first carrier;
attaching a second side of the first interposer to a package substrate, the second side of the first interposer being opposite to the first side of the first interposer; and
placing an underfill between the first interposer and the package substrate.
16 . The method of claim 15 , further comprising bonding an integrated passive device to the second side of the first interposer before placing the underfill, wherein the integrated passive device is embedded in the underfill after placing the underfill.
17 . The method of claim 14 , wherein the second interposer completely separates the first encapsulant and the second encapsulant.
18 . The method of claim 14 , further comprising bonding a bridge die to the first side of the first interposer by metal-to-metal bonding and dielectric-to-dielectric bonding.
19 . The method of claim 14 , wherein the second encapsulant comprises a polymer.
20 . The method of claim 14 , wherein the second encapsulant has a larger thickness than the first encapsulant.