Direct-bonded optoelectronic devices
Direct-bonded LED arrays and applications are provided. An example process fabricates a LED structure that includes coplanar electrical contacts for p-type and n-type semiconductors of the LED structure on a flat bonding interface surface of the LED structure. The coplanar electrical contacts of the flat bonding interface surface are direct-bonded to electrical contacts of a driver circuit for the LED structure. In a wafer-level process, micro-LED structures are fabricated on a first wafer, including coplanar electrical contacts for p-type and n-type semiconductors of the LED structures on the flat bonding interface surfaces of the wafer. At least the coplanar electrical contacts of the flat bonding interface are direct-bonded to electrical contacts of CMOS driver circuits on a second wafer. The process provides a transparent and flexible micro-LED array display, with each micro-LED structure having an illumination area approximately the size of a pixel or a smallest controllable element of an image represented on a high-resolution video display.
1 . A bonded apparatus, comprising:
an optoelectronic layer optically coupled to a first optical element;
a semiconductor active device layer comprising a dielectric-filled portion, wherein the semiconductor active device layer and the optoelectronic layer are directly bonded; and
one or more additional layers disposed over the semiconductor active device layer, wherein the semiconductor active device layer is between the optoelectronic layer and the one or more additional layers.
2 . The bonded apparatus of claim 1 , wherein the optoelectronic layer comprises a first electrical contact and a first dielectric at a first surface, wherein the semiconductor active device layer comprises a second electrical contact and a second dielectric at a second surface, the second dielectric corresponding to the dielectric-filled portion, wherein the first electrical contact and the second electrical contact are directly bonded, and wherein the first dielectric and the second dielectric are directly bonded.
3 . The bonded apparatus of claim 1 , wherein the one or more additional layers comprise build-up layers.
4 . The bonded apparatus of claim 1 , wherein the first optical element is vertically positioned with respect to the optoelectronic layer.
5 . The bonded apparatus of claim 4 , wherein the first optical element comprises an optical waveguide to transmit an optical signal from the optoelectronic layer.
6 . The bonded apparatus of claim 1 , further comprising an edge emitting configuration, wherein the edge emitting configuration comprises the first optical element.
7 . The bonded apparatus of claim 1 , further comprising a cooling structure to dissipate heat generated by the bonded apparatus.
8 . A bonded apparatus, comprising:
a first element comprising an optoelectronic device, a first substrate, and a first bonding surface including a first electrical contact and a first dielectric;
a second element comprising an active region and a second bonding surface including a second electrical contact and a second dielectric, wherein the first element is directly bonded to the second element to form a dielectric-to-dielectric direct bond between the first dielectric and the second dielectric and a metal-to-metal direct bond between the first electrical contact and the second electrical contact;
an encapsulant disposed along at least a side portion of the second element; and
a waveguide to transmit an optical signal from the optoelectronic device.
9 . The bonded apparatus of claim 8 , further comprising one or more additional layers disposed over the second element, wherein the second element is between the first element and the one or more additional layers.
10 . The bonded apparatus of claim 9 , wherein the one or more additional layers comprise build-up layers.
11 . The bonded apparatus of claim 8 , wherein the first substrate is transparent.
12 . The bonded apparatus of claim 8 , wherein the first substrate comprises an oxide.
13 . The bonded apparatus of claim 12 , wherein the first substrate comprises sapphire.
14 . A bonded apparatus, comprising:
an optoelectronic element comprising a first electrical contact and a first dielectric;
a reconstituted element comprising an electronic element and a fill material disposed along at least a side portion of the electronic element; and
a transparent substrate disposed over and coupled to the optoelectronic element and the reconstituted element,
wherein the electronic element comprises an active semiconductor portion, the active semiconductor portion including a second electrical contact and a second dielectric, wherein the first electrical contact is directly bonded to the second electrical contact, and wherein the first dielectric is directly bonded to the second dielectric.
15 . The bonded apparatus of claim 14 , further comprising a reflective element disposed below the optoelectronic element, the reflective element to reflect light in the direction of the transparent substrate.
16 . The bonded apparatus of claim 15 , wherein the reflective element comprises a distributed Bragg reflector (DBR).
17 . The bonded apparatus of claim 14 , wherein the reconstituted element comprises driver circuitry.
18 . The bonded apparatus of claim 14 , further comprising an oxide-to-oxide bond between the first dielectric and the second dielectric.
19 . The bonded apparatus of claim 14 , wherein the transparent substrate comprises an oxide.
20 . The bonded apparatus of claim 14 , wherein the optoelectronic element comprises a light emitting diode (LED).