IP Library Granted Patent US 12708054
Granted Patent B2
US 12708054 · App. 18/276,476 · Granted Aug 11, 2026

Composite substrate and method for manufacturing the same, electronic device

Inventors: Yifan Wu (Beijing, CN); Yue Li (Beijing, CN); Yuelei Xiao (Beijing, CN); Xiaodong Li (Beijing, CN); Jingshu Zhang (Beijing, CN); Kidong Han (Beijing, CN); Yulin Feng (Beijing, CN); Qichang An (Beijing, CN); Yingwei Liu (Beijing, CN); Zijian Wang (Beijing, CN); Rui Ma (Beijing, CN); Quanyue Li (Beijing, CN); Song Chen (Beijing, CN); Qianyu Guo (Beijing, CN); Biqi Li (Beijing, CN)
Assignees: BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.; BOE TECHNOLOGY GROUP CO., LTD.
H10W90/401H10W70/05H10W70/65H10W70/685H10W70/692H10W90/701H05K1/181H05K2201/10378H10W70/60H10W90/724
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Quick Facts
Patent No.
US 12708054
App. No.
18/276,476
Filed
Aug 9, 2023
Granted
Aug 11, 2026
Kind
B2
Art Unit
2847
USPC
174/250
Abstract

A composite substrate, a method for manufacturing a composite substrate, and an electronic device are provided. The composite substrate includes a package substrate and an interposer which are stacked; the interposer includes: a first dielectric substrate including a first connection via penetrating therethrough, and a first surface and a second surface opposite to each other; a first connection electrode in the first connection via; and a first connection structure and a second connection structure respectively on the first surface and the second surface and both connected to the first connection electrode; the package substrate includes: a second dielectric substrate on a side of the second connection structure away from the first dielectric substrate; a third connection structure and a fourth connection structure which are on the second dielectric substrate and electrically connected; the third connection structure being electrically connected to the first connection electrode through the second connection structure.

Claims (35)

1 . A composite substrate, comprising:

a package substrate and an interposer which are stacked,

wherein the interposer comprises:

a first dielectric substrate comprising a first connection via penetrating through the first dielectric substrate along a thickness direction, in which a thickness of the first dielectric substrate extends, of the first dielectric substrate, and a first surface and a second surface opposite to each other along the thickness direction of the first dielectric substrate;

a first connection electrode disposed in the first connection via; and

a first connection structure and a second connection structure respectively disposed on the first surface and the second surface and both connected to the first connection electrode;

the package substrate comprises:

a second dielectric substrate disposed on a side of the second connection structure away from the first dielectric substrate;

a third connection structure and a fourth connection structure which are disposed on the second dielectric substrate and are electrically connected,

the third connection structure being electrically connected to the first connection electrode through the second connection structure,

wherein the second connection structure and the third connection structure are directly contacted with each other,

wherein the interposer further comprises a first redundant electrode disposed on the second surface and located in a peripheral region, the package substrate further comprises a second redundant electrode disposed on a side of the second dielectric substrate close to the second connection structure and located in the peripheral region; the first redundant electrode and the second redundant electrode are connected by bonding, the first redundant electrode is not connected to the second connection structure, and the second redundant electrode is not connected to the third connection structure.

2 . The composite substrate of claim 1 , wherein a third insulation layer is disposed on a side of the first connection structure away from the first surface, a third via is provided at a position of the third insulation layer corresponding to the first connection structure, and a third transfer electrode is disposed in the third via; a fourth insulation layer is disposed on a side of the fourth connection structure away from the second dielectric substrate, a fourth via is provided at a position of the fourth insulation layer corresponding to the fourth connection structure, and a fourth transfer electrode is disposed in the second via; the third transfer electrode is configured to be electrically connected to a chip to be installed; the fourth transfer electrode is configured to be electrically connected to a printed circuit board to be installed.

3 . The composite substrate of claim 1 , wherein the first connection structure comprises a plurality of first sub-electrodes, in multiple layers, sequentially disposed on the first surface, and a fifth insulation layer is disposed between any adjacent ones of the first sub-electrodes, and the first sub-electrodes adjacent to each other are electrically connected through a fifth via penetrating through the fifth insulation layer between the first sub-electrodes.

4 . The composite substrate of claim 1 , wherein the second connection structure comprises a plurality of second sub-electrodes, in multiple layers, sequentially disposed on the second surface, a sixth insulation layer is disposed between any adjacent ones of the second sub-electrodes, and the second sub-electrodes adjacent to each other are electrically connected through a sixth via penetrating through the sixth insulation layer between the second sub-electrodes.

5 . The composite substrate of claim 1 , wherein the second dielectric substrate is provided with a second connection via penetrating through the second dielectric substrate along a thickness direction, in which a thickness of the second dielectric substrate extends, of the second dielectric substrate, and a second connection electrode is disposed in the second connection via; the second dielectric substrate comprises a third surface and a fourth surface opposite to each other along the thickness direction of the second dielectric substrate; and third surface is closer to the second surface than the fourth surface;

the third connection structure is disposed on the third surface, the fourth connection structure is disposed on the fourth surface, and the third connection structure is electrically connected to the fourth connection structure through the second connection electrode.

6 . The composite substrate of claim 5 , wherein the third connection structure comprises a plurality of third sub-electrodes, in multiple layers, sequentially disposed on the third surface, and a seventh insulation layer is disposed between any adjacent ones of the third sub-electrodes, and the third sub-electrodes adjacent to each other are electrically connected through a seventh via penetrating through the seventh insulation layer between the third sub-electrodes.

7 . The composite substrate of claim 5 , wherein the fourth connection structure comprises a plurality of fourth sub-electrodes, in multiple layers, sequentially disposed on the fourth surface, and an eighth insulation layer is disposed between any adjacent ones of the fourth sub-electrodes, and the fourth sub-electrodes adjacent to each other are electrically connected through an eighth via penetrating through the eighth insulation layer between the fourth sub-electrodes.

8 . The composite substrate of claim 5 , wherein materials of the first dielectric substrate and the second dielectric substrate are the same as each other.

9 . The composite substrate of claim 1 , wherein the third connection structure and the fourth connection are disposed in a same layer, and a ninth insulation layer is disposed between the layer in which the third connection structure and the fourth connection structure are disposed and the second dielectric substrate.

10 . The composite substrate of claim 9 , wherein the second dielectric substrate comprises a metal substrate or a metal-ceramic composite substrate.

11 . The composite substrate of claim 1 , wherein the first dielectric substrate comprises a glass substrate.

12 . The composite substrate of claim 1 , wherein the second dielectric substrate comprises a ceramic substrate.

13 . The composite substrate of claim 1 , further comprising a chip and a printed circuit board; the chip is electrically connected to the first connection structure; the printed circuit board is electrically connected to the fourth connection structure.

14 . A method for manufacturing a composite substrate, comprising: forming a package substrate and an interposer, and electrically connecting the package substrate with the interposer,

wherein the forming an interposer comprises:

providing a first dielectric substrate comprising a first connection via penetrating through the first dielectric substrate along a thickness direction, in which a thickness of the first dielectric substrate extends, of the first dielectric substrate, and a first surface and a second surface opposite to each other along the thickness direction of the first dielectric substrate; and

forming a first connection electrode in the first connection via, forming a first connection structure on the first surface, and forming a second connection structure on the second surface, the first connection structure being electrically connected to the second connection structure through the first connection electrode;

the forming a package substrate comprises:

providing a second dielectric substrate; and

forming a third connection structure and a fourth connection structure on the second dielectric substrate; the third connection structure being configured to be electrically connected to the first connection electrode through the second connection structure,

wherein the electrically connecting the package substrate with the interposer comprises:

bonding the first dielectric substrate formed with the second connection structure with the second dielectric substrate formed with the third connection structure, electrically connecting the package substrate and the interposer through a bonded connection between the second connection structure and the third connection structure,

wherein a first redundant electrode is further formed in a peripheral region during forming the second connection structure; a second redundant electrode is further formed in the peripheral region during forming the third connection structure, the first redundant electrode and the second redundant electrode are connected by bonding, the first redundant electrode is not connected to the second connection structure, and the second redundant electrode is not connected to the third connection structure.